电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

TBU801G

产品描述8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小37KB,共2页
制造商HY Electronic
官网地址http://www.hygroup.com.tw
下载文档 全文预览

TBU801G概述

8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE

文档预览

下载PDF文档
GBU8005 thru GBU810 SERIES
GLASS PASSIVATED
BRIDGE RECTIFIERS
FEATURES
Surge overload rating -200 amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing
REVERSE VOLTAGE
- 50
to
1000Volts
FORWARD CURRENT
- 8.0
Amperes
GBU
.874(22.2)
.860(21.8)
.154(3.9)
.146(3.7)
.232(5.9)
.224(5.7)
3.2*3.2
CHAMFER
.139(3.53)
.133(3.37)
molded plastic technique
Plastic material has U/L
.752(19.1)
.720(18.3)
.073(1.85)
.057(1.45)
flammability classification 94V-0
Mounting postition:Any
.720(18.29)
.680(17.27)
.047(1.2)
.035(0.9)
.100(2.54)
.085(2.16)
.080(2.03)
.065(1.65)
.106(2.7)
.091(2.3)
.022(.56)
.210 .210 .210
.018(.46)
.190 .190 .190
(5.3) (5.3) (5.3)
(4.8) (4.8) (4.8)
Dimensions in inches and (milimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward (with heatsink Note 2)
Rectified Current
@ T
C
=100℃ (without heatsink)
Peak Forward Surage Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load (JEDEC Method)
Maximum Forward Voltage at 4.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
I
2
t Rating for Fusing (t<8.3ms)
Typical Junction Capacitance Per Element (Note1)
Typical Thermal Resistance (Note2)
Operating Temperature Range
Storage Temperature Range
@ T
J
=25℃
@ T
J
=125℃
SYMBOL GBU8005 GBU801 GBU802 GBU804 GBU806 GBU808 GBU810
V
RRM
V
RMS
V
DC
I
(AV)
50
30
50
100
70
100
200
140
200
400
280
400
8.0
3.2
200
1.1
10.0
500
166
60
2.2
-55 to +150
-55 to +150
600
420
600
800
560
800
1000
700
1000
UNIT
V
V
V
A
I
FSM
V
F
I
R
I
2
t
C
J
R
θJC
T
J
T
STG
A
V
uA
A
2
s
pF
℃/W
NOTES: 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Device mounted on 75mm*75mm*1.6mm cu plate heatsink.
~ 311 ~

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1552  2577  1398  1274  101  32  52  29  26  3 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved