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MVMPTE-12CE3TR

产品描述Trans Voltage Suppressor Diode, 1500W, 12V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC, CASE 1, 2 PIN
产品类别分立半导体    二极管   
文件大小174KB,共3页
制造商Microsemi
官网地址https://www.microsemi.com
标准
下载文档 详细参数 全文预览

MVMPTE-12CE3TR概述

Trans Voltage Suppressor Diode, 1500W, 12V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC, CASE 1, 2 PIN

MVMPTE-12CE3TR规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Microsemi
包装说明O-PALF-W2
针数2
制造商包装代码CASE 1
Reach Compliance Codeunknown
ECCN代码EAR99
最小击穿电压14.1 V
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码O-PALF-W2
JESD-609代码e3
最大非重复峰值反向功率耗散1500 W
元件数量1
端子数量2
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
极性BIDIRECTIONAL
最大功率耗散1.52 W
认证状态Not Qualified
参考标准MIL-19500
最大重复峰值反向电压12 V
表面贴装NO
技术AVALANCHE
端子面层MATTE TIN
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED

文档预览

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1N6373 thru 1N6389, e3
or MPTE-5 thru MPTE-45C, e3
SCOTTSDALE DIVISION
1500 WATT LOW CLAMPING FACTOR
TRANSIENT VOLTAGE SUPPRESSOR
DESCRIPTION
This Transient Voltage Suppressor (TVS) series for 1N6373 thru 1N6389
are JEDEC registered selections for both unidirectional and bidirectional
devices. The 1N6373 thru 1N6381 are unidirectional and the 1N6382 thru
1N6389 are bi-directional where they all provide a very low specified
clamping factor for minimal clamping voltages (V
C
) above their respective
breakdown voltages (V
BR
) as specified herein. They are most often used
in protecting sensitive components from inductive switching transients or
induced secondary lightning effects as found in lower surge levels of
IEC61000-4-5 . They are also very successful in protecting airborne
avionics and electrical systems. Since their response time is virtually
instantaneous, they can also protect from ESD and EFT per IEC61000-4-2
and IEC61000-4-4.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
CASE 1
FEATURES
Unidirectional and bidirectional TVS series for thru-hole
mounting
Suppresses transients up to 1500 watts @ 10/1000 µs
t
clamping
(0 volts to V
(BR)
min):
Unidirectional – Less than 100 pico seconds.
Bidirectional – Less than 5 nano seconds.
Working voltage (V
WM
) range 5 V to 45 V
Low clamping factor (ratio of actual V
C
/V
BR
): 1.33 @ full
rated power and 1.20 @ 50% rated power
Economical plastic encapsulated TVS for thru-hole mount
Options for screening in accordance with MIL-PRF-19500
for JAN, JANTX, and JANTXV are also available by
adding MQ, MX, or MV prefixes respectively to part
numbers, e.g. MX1N6373, etc.
Surface mount equivalent packages also available as
SMCJ6373 – SMCJ6389 (consult factory for other
surface mount options)
RoHS Compliant devices available by adding “e3” suffix
Metal package axial-leaded equivalents available in the
1N6373 – 1N6389 series (see separate data sheet)
APPLICATIONS / BENEFITS
Designed to protect Bipolar and MOS
Microprocessor based systems.
Protection from switching transients and induced RF
ESD & EFT protection per IEC 61000-4-2 and -4-4
Secondary lightning protection per IEC61000-4-5
with 42 Ohms source impedance:
Class 1, 2 & 3 1N6356 to 1N6372
Class 4: 1N6356 to 1N6362
Secondary lightning protection per IEC61000-4-5
with 12 Ohms source impedance:
Class 1 & 2: 1N6356 to 1N6372
Class 3: 1N6356 to 1N6362
Class 4: 1N6356 to 1N6358
Secondary lightning protection per IEC61000-4-5
with 2 Ohms source impedance:
Class 2: 1N6356 to 1N6361
Class 3: 1N6356 to 1N6358
MAXIMUM RATINGS
1500 Watts for 10/1000
μs
with repetition rate of 0.01% or
less* at lead temperature (T
L
) 25
o
C (See Figs. 1, 2, & 4)
o
o
Operating & Storage Temperatures: -65 to +150 C
Thermal Resistance: 22
º
C/W junction to lead at 3/8 inch
(10 mm) from body, or 82
º
C/W junction to ambient when
2
mounted on FR4 PC board with 4 mm copper pads (1oz)
and track width 1 mm, length 25 mm
Steady-State Power dissipation*: 5 watts at T
L
< 40
o
C, or
1.52 watts at T
A
= 25
º
C when mounted on FR4 PC board
described for thermal resistance
Solder Temperatures: 260
o
C for 10 s (maximum)
MECHANICAL AND PACKAGING
CASE: Void-free transfer molded thermosetting
epoxy body meeting UL94V-0
FINISH: Tin-Lead or RoHS Compliant annealed-
matte Tin plating solderable per MIL-STD-750
method 2026
POLARITY: Cathode indicated by band
MARKING: Part number and polarity diode symbol
WEIGHT: 1.5 grams. (Approx)
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
See “CASE 1” package dimension on last page
1N6373 thru 1N6389, e3
MPTE-5 thru MPTE-45C, e3
TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage
(V
WM
) except for transients that briefly drive the device into avalanche breakdown (V
BR
to V
C
region).
Copyright
©
2008
10-09-2008 REVD
*
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
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