INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
MJE2801T
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 60V(Min)
·High
DC Current Gain-
:
h
FE
= 25-100@I
C
= 3A
·Complement
to Type MJE2901T
APPLICATIONS
·Designed
for use as an output device in complementary
audio amplifiers up to 35 watts music power per channel.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
60
60
4
10
5
75
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.67
UNIT
℃/W
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MJE2801T
TYP.
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 200mA; I
B
=
0
60
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 4A; I
B
= 0.4A
B
1.1
V
V
BE
(on)
I
CBO
Base-Emitter On Voltage
I
C
= 3A ; V
CE
= 2V
V
CB
= 60V; I
E
= 0
V
CB
= 60V; I
E
= 0;T
C
= 150℃
V
EB
= 4V; I
C
=0
1.4
0.1
2.0
1.0
V
Collector Cutoff Current
mA
I
EBO
Emitter Cutoff Current
mA
h
FE
DC Current Gain
I
C
= 3A ; V
CE
= 2V
25
100
isc Website:www.iscsemi.cn
2