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MJD41C (NPN)
MJD42C (PNP)
Complementary Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
Features
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•
Lead Formed for Surface Mount Applications in Plastic Sleeves
•
•
•
•
•
(No Suffix)
Straight Lead Version in Plastic Sleeves (“1” Suffix)
Electrically Similar to Popular TIP41 and TIP42 Series
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B
u
8000 V
Machine Model, C
u
400 V
Pb−Free Packages are Available
SILICON
POWER TRANSISTORS
6 AMPERES
100 VOLTS, 20 WATTS
MARKING
DIAGRAMS
4
1 2
YWW
J4xCG
3
DPAK
CASE 369C
STYLE 1
4
YWW
J4xCG
1
2
3
DPAK−3
CASE 369D
STYLE 1
Y
= Year
WW = Work Week
J4xC = Device Code
x = 1 or 2
G
= Pb−Free Package
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Base Current
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
Total Power Dissipation (Note 1)
@ T
A
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
−
Continuous
−
Peak
Symbol
V
CEO
V
CB
V
EB
I
C
I
B
P
D
P
D
Max
100
100
5
6
10
2
20
0.16
1.75
0.014
−65
to +150
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W/°C
W
W/°C
°C
T
J
, T
stg
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
(Note 1)
Symbol
R
qJC
R
qJA
Max
6.25
71.4
Unit
°C/W
°C/W
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
©
Semiconductor Components Industries, LLC, 2009
April, 2009
−
Rev. 7
1
Publication Order Number:
MJD41C/D
MJD41C (NPN) MJD42C (PNP)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
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Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(I
C
= 30 mAdc, I
B
= 0)
Collector Cutoff Current
(V
CE
= 60 Vdc, I
B
= 0)
V
CEO(sus)
I
CEO
I
CES
100
−
−
−
−
Vdc
50
10
mAdc
mAdc
Collector Cutoff Current
(V
CE
= 100 Vdc, V
EB
= 0)
Emitter Cutoff Current
(V
BE
= 5 Vdc, I
C
= 0)
I
EBO
0.5
mAdc
ON CHARACTERISTICS
(Note 2)
DC Current Gain
(I
C
= 0.3 Adc, V
CE
= 4 Vdc)
(I
C
= 3 Adc, V
CE
= 4 Vdc)
h
FE
−
30
15
−
−
−
75
Collector−Emitter Saturation Voltage
(I
C
= 6 Adc, I
B
= 600 mAdc)
Base−Emitter On Voltage
(I
C
= 6 Adc, V
CE
= 4 Vdc)
V
CE(sat)
V
BE(on)
1.5
2
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current Gain
−
Bandwidth Product (Note 3)
(I
C
= 500 mAdc, V
CE
= 10 Vdc, f
test
= 1 MHz)
Small−Signal Current Gain
(I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 1 kHz)
f
T
3
−
−
MHz
−
h
fe
20
2. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2%.
3. f
T
=
⎪h
fe
⎪•
f
test
.
ORDERING INFORMATION
Device
MJD41CRL
MJD41CRLG
MJD41CT4
MJD41CT4G
MJD42C
MJD42CG
MJD42C1
MJD42C1G
MJD42CRL
MJD42CRLG
MJD42CT4
MJD42CT4G
Package Type
DPAK
DPAK
(Pb−Free)
DPAK
DPAK
(Pb−Free)
DPAK
DPAK
(Pb−Free)
DPAK−3
DPAK−3
(Pb−Free)
DPAK
DPAK
(Pb−Free)
DPAK
DPAK
(Pb−Free)
1800 / Tape & Reel
369C
2500 / Tape & Reel
369D
369C
2500 / Tape & Reel
1800 / Tape & Reel
Package
Shipping
†
75 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
MJD41C (NPN) MJD42C (PNP)
TYPICAL CHARACTERISTICS
T
A
2.5
PD, POWER DISSIPATION (WATTS)
T
C
25
V
CC
+ 30 V
R
C
R
B
D
1
-4 V
SCOPE
2
20
+11 V
0
T
C
-9 V
25
ms
1.5
15
51
1
10
T
A
SURFACE MOUNT
t
r
, t
f
≤
10 ns
DUTY CYCLE = 1%
0.5
0
5
0
25
50
75
100
125
150
T, TEMPERATURE (°C)
R
B
and R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
MUST BE FAST RECOVERY TYPE, e.g.:
MSB5300 USED ABOVE I
B
≈
100 mA
MSD6100 USED BELOW I
B
≈
100 mA
REVERSE ALL POLARITIES FOR PNP.
Figure 1. Power Derating
Figure 2. Switching Time Test Circuit
500
300
200
hFE , DC CURRENT GAIN
100
70
50
30
20
10
7
5
0.06
V
CE
= 2 V
T
J
= 150°C
t, TIME (
μ
s)
25°C
2
1
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.06 0.1
t
r
T
J
= 25°C
V
CC
= 30 V
I
C
/I
B
= 10
- 55°C
t
d
@ V
BE(off)
≈
5 V
0.1
0.2
0.3 0.4
0.6
1
2
4
6
0.2
0.4
0.6
1
2
4
6
I
C
, COLLECTOR CURRENT (AMP)
I
C
, COLLECTOR CURRENT (AMP)
Figure 3. DC Current Gain
2
T
J
= 25°C
1.6
V, VOLTAGE (VOLTS)
5
3
2
Figure 4. Turn−On Time
t
s
1.2
t, TIME (
μ
s)
1
0.7
0.5
0.3
0.2
t
f
0.1
0.07
0.05
0.06 0.1
T
J
= 25°C
V
CC
= 30 V
I
C
/I
B
= 10
I
B1
= I
B2
0.8
V
CE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 4 V
0.4
V
BE(sat)
@ I
C
/I
B
= 10
0
0.06
0.1
0.2 0.3 0.4
0.6
1
2
3
4
6
I
C
, COLLECTOR CURRENT (AMP)
0.2
0.4 0.6
1
2
I
C
, COLLECTOR CURRENT (AMP)
4
6
Figure 5. “On” Voltages
Figure 6. Turn−Off Time
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3
MJD41C (NPN) MJD42C (PNP)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
2
T
J
= 25°C
1.6
I
C
= 1 A
1.2
2.5 A
5A
C, CAPACITANCE (pF)
200
C
ib
100
70
50
C
ob
300
T
J
= 25°C
0.8
0.4
0
10
20
30
50
100
200 300
I
B
, BASE CURRENT (mA)
500
1000
30
0.5
1
3
10
2
5
20
V
R
, REVERSE VOLTAGE (VOLTS)
30
50
Figure 7. Collector Saturation Region
Figure 8. Capacitance
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1
0.7
0.5
0.3
0.2
D = 0.5
0.2
0.1
R
qJC(t)
= r(t) R
qJC
R
qJC
= 6.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
q
JC(t)
P
(pk)
0.1
0.07
0.05
0.03
0.02
0.05
0.02
0.01
SINGLE PULSE
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1
2 3
5
t, TIME (ms)
10
20
30
50
100
200 300
500
1000
Figure 9. Thermal Response
10
IC, COLLECTOR CURRENT (AMP)
5
3
2
1
0.5
0.3
0.1
500
ms
dc
5 ms
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW RATED V
CEO
T
C
= 25°C SINGLE PULSE
T
J
= 150°C
1
100
ms
1 ms
0.05
0.03
0.01
MJD41C, 42C
2
3
5 7 10
20 30
50 70 100
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
−
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 10 is based on T
J(pk)
= 150_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
T
J(pk)
v
150_C. T
J(pk)
may be calculated from the data in
Figure 9. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure 10. Maximum Forward Bias
Safe Operating Area
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