Production specification
Epitaxial Planar NPN Transistor
FEATURES
Low formed for surface mount
application.
MJD41C
Pb
Lead-free
Electrically similar to popular and TIP41C.
Straight Lead.
APPLICATIONS
General purpose amplifier.
Low speed switching applications.
TO-251
TO-252
MAXIMUM RATING
operating temperature range applies unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
,T
stg
Parameter
Collector-Base Volage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Current -Peak
Base Current
Collector Power Dissipation
Junction and Storage temperature range
Value
100
100
5
6
10
2
1.25
-65 to +150
Units
V
V
V
A
A
A
W
℃
V/(W)035
Rev.A
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1
Production specification
Epitaxial Planar NPN Transistor
MJD41C
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Parameter
Collector-emitter sustaining voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V
CEO
(sus)
I
CEO
I
CES
I
EBO
Test conditions
I
C
=30mA,I
B
=0
V
CE
=60V,I
B
=0
V
CE
=100V,V
BE
=0
V
EB
=5V,I
C
=0
V
CE
=4V,I
C
=0.3A
V
CE
=4V,I
C
=3A
I
C
=6A,I
B
=600mA
V
CE
=6V,I
C
=4A
V
CE
=10V,I
C
=0.5A
3
30
15
MIN
100
50
10
0.5
MAX
UNIT
V
uA
uA
mA
DC current gain
h
FE
75
1.5
2
V
V
MHz
Collector-emitter saturation voltage
Base-emitter on voltage
Transition frequency
V
CE(sat)
V
BE(on)
f
T
TYPICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
V/(W)035
Rev.A
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2
Production specification
Epitaxial Planar NPN Transistor
MJD41C
V/(W)035
Rev.A
www.gmesemi.com
3
Production specification
Epitaxial Planar NPN Transistor
PACKAGE OUTLINE
Plastic surface mounted package
MJD41C
TO-251
TO-251
A
b
c
D
D1
D2
E
e
L
L1
L2
Φ
h
V
2.200
2.400
0.500
0.700
0.460
0.580
6.500
6.700
5.100
5.460
4.830 Typ.
6.000
6.200
2.186
2.386
12.000
12.600
5.100 Typ.
1.400
1.700
1.100
1.300
0.000
0.300
5.350 Typ.
All Dimensions in mm
PACKAGE OUTLINE
Plastic surface mounted package
TO-252
TO-252
C
A
A
4.95
5.40
6.05
2.20
0.40
8.80
5.59
6.63
7.10
2.40
0.61
10.60
D
K
B
C
D
G
B
E
F
J
F
G
H
5.35 Typ.
1.98
0.50
0.50
0.45
2.59
0.90
1.20
0.89
H
I
E
I
J
K
All Dimensions in mm
V/(W)035
Rev.A
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4
Production specification
Epitaxial Planar NPN Transistor
SOLDERING FOOTPRINT
6.40
MJD41C
1.50
1.80
2.30 2.30
2.70
6.80
Unit:mm
PACKAGE INFORMATION
Device
Package
TO-251/252
MJD41C
TO-252
2500PCS/Tape&Reel
Shipping
80PCS/Tube
V/(W)035
Rev.A
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5
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