DUAL CHANNEL
ILD620/620GB
QUAD CHANNEL
ILQ620/620GB
AC Input Phototransistor
Optocoupler
FEATURES
• Identical Channel to Channel Footprint
ILD620 Crosses to TLP620-2
ILQ620 Crosses to TLP620-4
• Current Transfer Ratio (CTR) at
I
F
= ±5.0 mA
ILD/Q620: 50% Min.
ILD/Q620GB: 100% Min.
• Saturated Current Transfer Ratio (CTR
SAT
)
at
I
F
= ±1.0 mA
ILD/Q620: 60% Typ.
ILD/Q620GB: 30% Min.
• High Collector-Emitter Voltage, BV
CEO
=70 V
• Dual and Quad Packages Feature:
– Reduced Board Space
– Lower Pin and Parts Count
– Better Channel to Channel CTR Match
– Improved Common Mode Rejection
• Field-Effect Stable by TRIOS
(TRansparent IOn Shield)
• Isolation Test Voltage from Double Molded
Package
• Underwriters Lab File #E52744
•
V
VDE 0884 Available with Option 1
D E
Dimensions in inches (mm)
pin one ID
4
.255 (6.48)
.268 (6.81)
5
6
7
8
3
2
1
K=Cathode
A/K 1
A/K 2
A/K 3
A/K 4
.300 (7.62)
.031 (0.79)
.130 (3.30)
.150 (3.81)
.050 (1.27)
.018 (.46)
.022 (.56)
.020 (.51 )
.035 (.89 )
.100 (2.54) typ.
10
°
3°–9°
.008 (.20)
.012 (.30)
K=Cathode
A/K 1
pin
one ID
8
7
6
5
4
3
2
1
.255 (6.48)
.265 (6.81)
9
10
11 12
13
14
15
16
A/K 2
A/K 3
A/K 4
A/K 5
A/K 6
A/K 7
A/K 8
16 Collector
15 Emitter
14 Collector
13 Emitter
12 Collector
11 Emitter
10 Collector
9 Emitter
.230(5.84)
.110 (2.79) .250(6.35)
.130 (3.30)
typ.
8 Collector
7 Emitter
6 Collector
5 Emitter
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
4° typ.
Maximum Ratings
(Each Channel)
Emitter
Forward Current .........................................±60 mA
Surge Current .............................................. ±1.5 A
Power Dissipation ...................................... 100 mW
Derate from 25
°
C .................................. 1.3 mW/
°
C
Detector
Collector-Emitter Breakdown Voltage ............. 70 V
Collector Current ......................................... 50 mA
Collector Current (t <1.0 ms)...................... 100 mA
Power Dissipation ...................................... 150 mW
Derate from 25
°
C.................................. 2.0 mW/
°
C
Package
Isolation Test Voltage (t=1.0 sec.) ......... 5300 V
RMS
Package Dissipation, ILD620/GB ............. 400 mW
Derate from 25
°
C............................... 5.33 mW/
°
C
Package Dissipation, ILQ620/GB............. 500 mW
Derate from 25
°
C............................... 6.67 mW/
°
C
Creepage..................................................
≥
7.0 mm
Clearance ................................................
≥
7.0 mm
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C...............................
≥
10
12
Ω
V
IO
=500 V,
T
A
=100
°
C............................
≥
10
11
Ω
Storage Temperature .................. –55
°
C to +150
°
C
Operating Temperature .............. –55
°
C to +100
°
C
Junction Temperature ................................... 100
°
C
Soldering Temperature
(2.0 mm from case bottom) ...................... 260
°
C
Document Number: 83653
Revision 17-August-01
.779 (19.77 )
.790 (20.07)
.030 (.76)
.045 (1.14)
.031(.79)
.130 (3.30)
.150 (3.81)
.300 (7.62)
typ.
.110 (2.79)
.130 (3.30) .230 (5.84)
.250 (6.35)
4°
.020(.51)
.035 (.89)
.100 (2.54)typ.
.018 (.46)
.022 (.56)
.050 (1.27)
10°
typ.
3°–9°
.008 (.20)
.012 (.30)
DESCRIPTION
The ILD/Q620 and ILD/Q620GB are multi-channel input phototransistor
optocouplers that use inverse parallel GaAs IRLED emitters and high gain
NPN silicon phototransistors per channel. These devices are constructed
using over/under leadframe optical coupling and double molded insulation
resulting in a Withstand Test Voltage of 5300 V
RMS
.
The LED parameters and the linear CTR characteristics combined with the
TRIOS field-effect process make these devices well suited for AC voltage
detection. The ILD/Q620GB with its low
I
F
guaranteed CTR
CE
sat
minimizes
power dissipation of the AC voltage detection network that is placed in
series with the LEDs. Eliminating the phototransistor base connection pro-
vides added electrical noise immunity from the transients found in many
industrial control environments.
www.vishay.com
2–198
Characteristics
Symbol
Emitter
Forward Voltage
Forward Current
Capacitance
Thermal Resistance, Junction to Lead
Detector
Capacitance
Collector-Emitter Leakage Current
Collector-Emitter Leakage Current
Thermal Resistance, Junction to Lead
Package Transfer Characteristics
Channel/Channel CTR Match
CTR Symmetry
Off-State Collector Current
ILD/Q620
Saturated Current Transfer Ratio
Current Transfer Ratio
Collector-Emitter Saturation Voltage
ILD/Q620GB
Saturated Current Transfer Ratio
Current Transfer Ratio (Collector-Emitter)
Collector-Emitter Saturation Voltage
Isolation and Insulation
Common Mode Rejection, Output High
Common Mode Rejection, Output Low
Common Mode Coupling Capacitance
Package Capacitance
Insulation Resistance
Channel to Channel Insulation
CMH
CML
—
—
—
—
—
500
5000
5000
0.01
0.8
10
12
—
—
—
—
—
—
—
V/µs
V/µs
pF
pF
Ω
VAC
V
CM
=50 V
P-P
,
R
L
=1.0 kΩ,
I
F
=0
mA
V
CM
=50 V
P-P
,
R
L
=1.0 kΩ,
I
F
=10 mA
—
V
I-O
=0 V, f=1.0 MHz
V
I-O
=500 V
—
CTR
CEsat
CTR
CE
30
100
—
—
200
—
—
600
0.4
%
%
V
CTR
CEsat
CTR
CE
—
50
—
60
80
—
—
600
0.4
%
%
V
CTRX/CTRY
I
CE(RATIO)
I
CE(OFF)
1 to 1
0.5
—
—
—
1.0
3 to 1
2.0
10
—
—
µ
A
Min.
1.0
—
—
—
—
—
—
—
Typ.
1.15
2.5
25
750
6.8
10
2.0
500
Max.
1.3
20
—
—
—
100
50
—
Unit
V
µ
A
pF
K/W
pF
nA
µ
A
K/W
Condition
V
F
I
F
C
O
R
THJL
C
CE
I
CEO
I
CEO
R
THJL
I
F
=
±
10 mA
V
R
=
±
0.7 V
V
F
=0 V, f=1.0 MHz
—
V
CE
=5.0 V, f=1.0 MHz
V
CE
=24 V
T
A
=85
°
C,
V
CE
=24 V
—
I
F
=
±
5.0 mA,
V
CE
=5.0 V
I
CE
(
I
F
=–5.0 mA)/I
CE
(
I
F
=+5.0 mA)
V
F
=±0.7 V,
V
CE
=24 V
I
F
=
±
1.0 mA,
V
CE
=0.4 V
I
F
=
±
5.0 mA,
V
CE
=5.0 V
I
F
=
±
8.0 mA, I
CE
=2.4 mA
I
F
=
±
1.0 mA,
V
CE
=0.4 V
I
F
=
±
5.0 mA,
V
CE
=5.0 V
I
F
=
±
1.0 mA, I
CE
=0.2 mA
V
CEsat
V
CEsat
C
CM
C
I-O
R
S
—
Switching Times
Figure 1. Non-saturated switching timing
I
F
=10 mA
V
CC
=5 V
V
O
R
L
=75
Ω
Figure 3. Non-saturated switching timing
I
F
F=10 KHz,
DF=50%
t
PHL
Figure 2. Saturated switching timing
F=10 KHz,
DF=50%
V
CC
=5 V
R
L
=1 KΩ
V
O
I
F
=10 mA
V
0
t
PLH
t
S
50%
t
F
t
off
t
D
t
R
t
on
Document Number: 83653
Revision 17-August-01
www.vishay.com
2–199
Figure 4. Saturated switching timing
I
F
Figure 5. LED forward current versus forward voltage
IF - LED Forward Current - mA
60
40
20
25°C
0
–55°C
-20
-40
-60
-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
85°C
V
O
t
R
t
D
t
PLH
V
TH
=1.5 V
t
F
t
PHL
t
S
VF - LED Forward Voltage - V
Non-saturated
Characteristic
On Time
Rise Time
Off Time
Fall Time
Propagation H-L
Propagation L-H
Symbol
Typ.
3.0
20
2.3
2.0
1.1
2.5
Unit
µs
µs
µs
µs
µs
µs
Test
Condition
Figure 6. Collector-emitter leakage versus temperature
Iceo - Collector-Emitter - nA
10
10
10
10
10
10
5
4
3
2
1
0
t
ON
t
r
t
OFF
t
f
t
PHL
t
PLH
I
F
=±10 mA
V
CC
=5.0 V
R
L
=75
Ω
50% of V
PP
Vce = 10V
TYPICAL
10 -1
10 -2
-20
0
20
40
60
80
100
T
A
- Ambient Temperature -
°C
Saturated
Characteristic
On Time
Rise Time
Off Time
Fall Time
Propagation H-L
Propagation L-H
Symbol
Typ.
4.3
2.8
2.5
11
2.6
7.2
Unit
µs
µs
µs
µs
µs
µs
Test
Condition
t
r
t
OFF
t
f
t
PHL
t
PLH
V
CC
=5.0 V
R
L
=1.0 KΩ
V
TH
=1.5 V
IF - Maximum LED Current - mA
t
ON
I
F
=±10 mA
Figure 7. Maximum LED current versus ambient
temperature
120
100
80
60
40
20
0
--60
-40
-20
0
20
40
60
80
100
TJ (MAX)=100°C
Ta - Ambient Temperature -
°C
Figure 8. Maximum LED power dissipation
200
P
LED
- LED Power - mW
150
100
50
0
--60
-40
-20
0
20
40
60
80
100
Ta - Ambient Temperature -
°C
Document Number: 83653
Revision 17-August-01
www.vishay.com
2–200
Figure 9. Collector current versus diode forward
current
I
C
–Normalized Collector Current
100
Normalized to
50
I
F
=10 mA
V
CE
=5 V
T
A
=25°C
10
5.0
2.5
1.0
0.5
Figure 12. Normalization factor for non-saturated and
saturated CTR
T
A
=100°C versus
I
F
CTRNF - Normalized CTR Factor
2.0
Normalized to:
V
CE
= 10 V, I
F
= 5 mA,
T
A
= 25°C
CTRce(sat) V
CE
= 0.4 V
ILD/Q620GB
ILD/Q620
1.5
1.0
NCTRce
0.5
NCTRce(sat)
T
A
= 100°C
0.0
.1
1
10
I
F
- LED Current - mA
100
0.1
1
5
10
Forward Current–I
F
(mA)
20
Figure 10. Normalization factor for non-saturated and
saturated CTR
T
A
=50°C versus
I
F
CTRNF - Normalized CTR Factor
2.0
Normalized to:
V
CE
= 10 V, I
F
= 5 mA,
T
A
= 25°C
CTRce(sat) V
CE
= 0.4 V
NCTRce
1.0
NCTRce(sat)
T
A
= 50°C
0.0
.1
1
10
100
Figure 13. Peak LED current versus peak duration, Tau
If(pk) - Peak LED Current - mA
10000
Duty Factor
1000
.005
.01
.02
.05
.1
.2
.5
t
τ
DF = /t
τ
1.5
100
0.5
10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
I
F
- LED Current - mA
t - LED Pulse Duration - s
Figure 11. Normalization factor for non-saturated and
saturated CTR
T
A
=70°C versus
I
F
CTRNF - Normalized CTR Factor
2.0
Normalized to:
V
CE
= 10 V, I
F
= 5 mA,
T
A
= 25°C
CTRce(sat) V
CE
= 0.4 V
NCTRce
Figure 14. Maximum detector power dissipation
200
P
- Detector Power - mW
DET
150
1.5
1.0
100
0.5
NCTRce(sat)
T
A
= 70°C
50
0.0
.1
1
10
I
F
- LED Current - mA
100
0
-60
-40
-20
0
20
40
60
Ta - Ambient Temperature - °C
80
100
Figure 15. Maximum collector current versus collector
voltage
I
CE
- Collector Current - mA
1000
100
10
1
.1
.1
1
10
100
V
CE
- Collector-Emitter Voltage - V
www.vishay.com
2–201
Rth=500°C/W
25°C
50°C
75°C
90°C
Document Number: 83653
Revision 17-August-01
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