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JANTXV1N5299UR

产品描述Current Regulator Diode, 1.2mA I(S), 1.45V V(L), Silicon, DO-213AB, HERMETIC SEALED PACKAGE-2
产品类别分立半导体    二极管   
文件大小94KB,共17页
制造商Compensated Devices Inc
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JANTXV1N5299UR概述

Current Regulator Diode, 1.2mA I(S), 1.45V V(L), Silicon, DO-213AB, HERMETIC SEALED PACKAGE-2

JANTXV1N5299UR规格参数

参数名称属性值
厂商名称Compensated Devices Inc
包装说明HERMETIC SEALED PACKAGE-2
Reach Compliance Codeunknown
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型CURRENT REGULATOR DIODE
JEDEC-95代码DO-213AB
JESD-30 代码O-XELF-R2
最大限制电压1.45 V
元件数量1
端子数量2
封装主体材料UNSPECIFIED
封装形状ROUND
封装形式LONG FORM
认证状态Not Qualified
参考标准MIL-19500/463G
标称调节电流 (Ireg)1.2 mA
表面贴装YES
技术FIELD EFFECT
端子形式WRAP AROUND
端子位置END

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The documentation and process conversion
measures necessary to comply with this
revision shall be completed by 2 July 2004.
INCH-POUND
MIL-PRF-19500/463G
2 April 2004
SUPERSEDING
MIL-PRF-19500/463F
24 June 2003
* PERFORMANCE SPECIFICATION SHEET
* SEMICONDUCTOR DEVICE, DIODE, SILICON, CURRENT REGULATOR, TYPES 1N5283-1
THROUGH 1N5314-1, AND 1N5283UR-1 THROUGH 1N5314UR-1, 1N7048-1 THROUGH 1N7055-1,
1N7048UR-1 THROUGH 1N7055UR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
* The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 100 volt, silicon, current regulator diodes.
Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.
Two levels of product assurance are provided for each unencapsulated device type.
1.2 Physical dimensions. See figure 1 (DO-7), figure 2 (DO-213AB), and figure 3 (JANHC and JANKC).
1.3 Maximum ratings. Maximum ratings are as shown in maximum test ratings (see 3.10) and as follows:
a. PT = 500 mW (DO-7) at TL = +50°C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink
at L = .375 inch (9.53 mm). (Derate to 0 at +175°C).
b. PT = 500 mW (DO-213AB) at TEC = +125°C. (Derate to 0 at +175°C).
c. -65°C
Tj
+175°C; -65°C
TSTG
+175°C.
1.4 Primary electrical characteristics. Primary electrical ratings are as shown in maximum test ratings (see 3.10)
and as follows, (nominally .22 mA dc
IP
4.70 mA dc):
a. R
ΘJL
= 250°C/W (maximum) at L = .375 inch (9.53 mm) (DO-7).
b. R
ΘJEC
= 100°C/W (maximum) junction to end-caps (DO-213AB).
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, or emailed to
Semiconductor@dscc.dla.mil.
Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at
http://www.dodssp.daps.mil.
AMSC N/A
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