HMPS-282x Series
MiniPak Surface Mount RF Schottky Barrier Diodes
Data Sheet
Description/Applications
These ultra-miniature products represent the blending of
Avago Technologies’ proven semiconductor and the latest
in leadless packaging. This series of Schottky diodes is
the most consistent and best all-round device available,
and finds applications in mixing, detecting, switching,
sampling, clamping and wave shaping at frequencies up
to 6 GHz. The MiniPak package offers reduced parasit-
ics when compared to conventional leaded diodes, and
lower thermal resistance.
The HMPS-282x family of diodes offers the best all-around
choice for most applications, featuring low series resis-
tance, low forward voltage at all current levels and good
RF characteristics.
Note that Avago’s manufacturing techniques assure that
dice found in pairs and quads are taken from adjacent
sites on the wafer, assuring the highest degree of match.
Minipak 1412 is a ceramic based package, while Minipak
QFN is a leadframe based package.
Features
•
Surface mount MiniPak package
•
Better thermal conductivity for higher power
dissipation
•
Single and dual versions
•
Matched diodes for consistent performance
•
Low turn-on voltage (as low as 0.34 V at 1 mA)
•
Low FIT (Failure in Time) rate*
•
Six-sigma quality level
•
For more information, see the Surface Mount
Schottky Reliability Data Sheet.
Package Lead Code Identification (Top View)
Single
3
2
#0
(MiniPak 1412)
4
1
3
2
#2
(MiniPak 1412)
Anti-parallel
3
2
#2
(MiniPak QFN)
4
1
3
2
#5
(MiniPak QFN)
Anti-parallel
4
1
3
2
#5
(MiniPak 1412)
Parallel
4
1
Pin Connections and Package Marking
3
AA
Date code
4
2
1
Product code
Parallel
4
1
Notes:
1. Package marking provides orientation and identification.
2. See “Electrical Specifications” for appropriate package marking.
HMPS-282x Series Absolute Maximum Ratings
[1]
,
T
c
= 5°c
Symbol
I
f
P
IV
T
j
T
stg
θ
jc
Parameter
Forward Current (1 µs pulse)
Peak Inverse Voltage
Junction Temperature
Storage Temperature
Thermal Resistance
[2]
Units
A
V
°C
°C
°C/W
MiniPak 1412/
MiniPak QFN
1
15
150
-65 to +150
150
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. T
C
= +25°C, where T
C
is defined to be the temperature at the package pins where contact is made to the circuit board.
MiniPak 1412
Electrical Specifications,
T
c
= +5°c, Single Diode
[4]
Part
Package
Number Marking Lead
HMPS- Code
Code
2820
L
0
Test Conditions
Minimum
Breakdown
Voltage
Configuration V
BR
(V)
Single
15
I
R
= 100
μA
Maximum
Forward
Voltage
V
F
(mV)
340
I
F
= 1
mA
[1]
Maximum
Forward
Voltage
V
F
(V) @ I
F
(mA)
0.5
10
Maximum
Reverse
Leakage
I
R
(nA) @ V
R
(V)
100
1
Typical
Maximum
Dynamic
Capacitance Resistance
C
T
(pF)
R
D
(Ω)
[4]
1.0
V
F
= 0 V
f=1
MHz
[2]
12
I
F
= 5 mA
Notes:
1. ∆V
F
for diodes in pairs is 15 mV maximum at 1 mA.
2. ∆C
TO
for diodes in pairs is 0.2 pF maximum.
3. Effective carrier lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA.
4. R
D
= R
S
+ 5.2Ω at 25°C and I
f
= 5 mA.
MiniPak QFN
Electrical Specifications,
T
c
= +5°c, Single Diode
[4]
Part
Number
HMPS-
2822
2825
Package
Marking Lead
Code
Code
3
2
2
5
Minimum
Breakdown
Voltage
Configuration V
BR
(V)
Anti-parallel
Parallel
15
I
R
= 100
μA
Maximum
Forward
Voltage
V
F
(mV)
340
I
F
= 1
mA
[1]
Maximum
Forward
Voltage
V
F
(V) @ I
F
(mA)
0.5
10
Maximum
Reverse
Leakage
I
R
(nA) @ V
R
(V)
100
1
Typical
Maximum
Dynamic
Capacitance Resistance
C
T
(pF)
R
D
(Ω)
[4]
1.0
V
F
= 0 V
f=1
MHz
[2]
12
I
F
= 5 mA
Test Conditions
Notes:
1. ∆V
F
for diodes in pairs is 15 mV maximum at 1 mA.
2. ∆C
TO
for diodes in pairs is 0.2 pF maximum.
3. Effective carrier lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA.
4. R
D
= R
S
+ 5.2Ω at 25°C and I
f
= 5 mA.
ESD WARNING:
Handling Precautions Should Be Taken To Avoid Static Discharge.
Linear Equivalent Circuit Model Diode Chip
R
j
R
S
SPICE Parameters
Parameter
B
V
C
J0
E
G
I
BV
I
S
N
R
S
P
B
P
T
M
Ω
V
Units
V
pF
eV
A
A
HMPS-282x
15
0.7
0.60
1E-4
2.2E-8
1.08
8.0
0.65
2
0.5
C
j
R
S
= series resistance (see Table of SPICE parameters)
C
j
= junction capacitance (see Table of SPICE parameters)
8.33 X 10
-5
nT
R
j
=
I
b
+ I
s
where
I
b
= externally applied bias current in amps
I
s
= saturation current (see table of SPICE parameters)
T = temperature,
°K
n = ideality factor (see table of SPICE parameters)
Note:
To effectively model the packaged HSMS-282x product, please refer
to Application Note AN1124.
MiniPak 1412 Linear Circuit Model of the Diode’s Package
20 fF
3
30 fF
2
1.1 nH
4
30 fF
1
Minipak QFN Linear Circuit Model of the Diode’s Package
19 fF
3
0.043 nH
20 fF
0.045 nH
0.328 nH
0.328 nH
2 fF
0.329 nH
0.053 nH
16 fF
0.053 nH
4
2
20 fF
Single diode package (HMPx-x8x0)
0.329 nH
1
18 fF
Parallel diode package (HMPx-x8x5)
19 fF
3
0.043 nH
20 fF
0.045 nH
0.328 nH
0.328 nH
2 fF
0.329 nH
0.053 nH
16 fF
0.053 nH
4
2
0.329 nH
1
18 fF
Anti-Parallel diode package (HMPx-x8x2)
MiniPak 1412 HMPS-282x Series Typical Performance
T
c
= 25°C (unless otherwise noted), Single Diode
100
T
A
= +125°C
T
A
= +75°C
T
A
= +25°C
T
A
= –25°C
100,000
10,000
1
0.8
I
F
– FORWARD CURRENT (mA)
I
R
– REVERSE CURRENT (nA)
C
T
– CAPACITANCE (pF)
T
A
= +125°C
T
A
= +75°C
T
A
= +25°C
0
5
10
15
V
R
– REVERSE VOLTAGE (V)
10
1000
0.6
1
100
0.4
0.1
10
1
0.2
0
0
2
4
6
8
V
R
– REVERSE VOLTAGE (V)
0.01
0
0.10
0.20
0.30
0.40
0.50
V
F
– FORWARD VOLTAGE (V)
Figure 1. Forward Current vs. Forward Voltage
at Temperatures.
1000
Figure 2. Reverse Current vs. Reverse Voltage
at Temperatures.
30
30
Figure 3. Total Capacitance vs. Reverse Voltage
at 1MHz
100
1.0
ΔV
F
- FORWARD VOLTAGE DIFFERENCE (mV)
10
I
F
(Left Scale)
10
100
I
F
(Left Scale)
10
10
1
ΔV
F
(Right Scale)
1
ΔV
F
(Right Scale)
1
0.1
1
10
100
0.3
0.2
0.4
0.6
0.8
1.0
1.2
0.3
1.4
1
0.10
0.15
0.20
0.1
0.25
I
F
– FORWARD CURRENT (mA)
V
F
- FORWARD VOLTAGE (V)
V
F
- FORWARD VOLTAGE (V)
Figure 4. Dynamic Resistance vs. Forward
Current.
Figure 5. Typical Vf Match, Series Pairs and Quads
at Mixer Bias Levels.
Figure 6. Typical Vf Match, Series Pairs at
Detector Bias Levels.
1
10
1
10
V
O
– OUTPUT VOLTAGE (V)
V
O
– OUTPUT VOLTAGE (V)
0.1
-25°C
+25°C
+75°C
0.1
0.01
0.001
+25°C
CONVERSION LOSS (dB)
DC bias = 3
μA
9
0.01
RF in
18 nH
3.3 nH
HSMS-282B
Vo
RF in
68
Ω
HSMS-282B
8
Vo
100 pF
100 KΩ
0
0.0001
1E-005
-20
100 pF
7
4.7 KΩ
20
30
6
0
2
4
6
8
10
12
0.001
-40
-30
-20
-10
-10
0
10
P
in
– INPUT POWER (dBm)
P
in
– INPUT POWER (dBm)
LOCAL OSCILLATOR POWER (dBm)
Figure 7. Typical Output Voltage vs. Input
Power, Small Signal Detector Operating at 850
MHz.
Figure 8. Typical Output Voltage vs. Input
Power, Large Signal Detector Operating at
915 MHz.
Figure 9. Typical Conversion Loss vs. L.O. Drive,
2.0 GHz (Ref AN997).
4
ΔV
F
- FORWARD VOLTAGE DIFFERENCE (mV)
R
D
– DYNAMIC RESISTANCE (Ω)
I
F
- FORWARD CURRENT (mA)
I
F
- FORWARD CURRENT (μA)
MiniPak QFN HMPS-2825 Series Typical Performance
T
c
= 25°C (unless otherwise noted), Single Diode
100
I
F
- FORWARD CURRENT (mA)
100000
1.0
0.8
C
T
- CAPACITANCE (pF)
15
0.6
0.4
0.2
0.0
I
R
– REVERSE CURRENT (nA)
10
T
A
= +125°C
T
A
= +75°C
T
A
= +25°C
T
A
= -25°C
10000
1000
100
10
1
T
A
= +125°C
T
A
= +75°C
T
A
= +25°C
0
5
10
1
0.1
0.01
0
0.1
0.2
0.3
0.4
0.5
0
2
4
6
8
V
F
- FORWARD VOLTAGE (V)
V
R
– REVERSE VOLTAGE (V)
V
R
- REVERSE VOLTAGE (V)
Figure 10. Forward Current vs. Forward Voltage at
Temperatures.
Figure 11. Reverse Current vs. Reverse Voltage at
Temperatures.
30
30
∆V
F
- FORWARD VOLTAGE DIFFERENCE (mV)
Figure 12. Total Capacitance vs. Reverse Voltage
at 1MHz
100
1.0
∆V
F
- FORWARD VOLTAGE DIFFERENCE (mV)
0.1
0.25
1000
RD - DYNAMIC RESISTANCE (ohms)
I
F
- FORWARD CURRENT (mA)
I
F
- FORWARD CURRENT (µA)
10
I
F
(Left Scale)
10
100
I
F
(Left Scale)
10
10
1
∆V
F
(Right Scale)
1
∆V
F
(Right Scale)
1
0.1
1.0
10.0
100.0
0.3
0.2
0.4
0.6
0.8
1.0
1.2
0.3
1.4
1
0.10
0.15
0.20
I
F
- FORWARD CURRENT (mA)
V
F
- FORWARD VOLTAGE (V)
V
F
- FORWARD VOLTAGE (V)
Figure 13. Dynamic Resistance vs. Forward
Current.
Figure 14. Typical Vf Match, Series Pairs and
Quads at Mixer Bias Levels.
Figure 15. Typical Vf Match, Series Pairs at
Detector Bias Levels.
10
CONVERSION LOSS (dB)
9
8
7
6
0
2
4
6
8
10
12
LOCAL OSCILLATOR POWER (dBm)
Figure 16. Typical Conversion Loss vs. L.O. Drive,
2.0 GHz (Ref AN997).
5
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