GaAs MMIC
2 to 6 GHz
Frequency Doubler
MICROWAVE CORPORATION
HMC157
V01.0700
GaAs MMIC FREQUENCY DOUBLER 1 - 2 GHz INPUT
F
EBRUARY
2001
Features
CONVERSION LOSS: 17 dB
Fo, 3Fo, 4Fo ISOLATION: > 35 dB
INPUT DRIVE LEVEL :10 to 20 dBm
General Description
The HMC157 is a miniature frequency dou-
bler in a MMIC die. Suppression of undes-
ired fundamental and higher order harmon-
ics is 35 to 60 dB with respect to input signal
level and 18 to 43 dB with respect to the
desired output signal level. The doubler
uses the same diode/balun technology used
in Hittite MMIC mixers, features small size
and requires no DC bias.
3
M
ULTIPLIERS
DIE
Guaranteed Performance,
50 Ohm system -55 to +85 deg C
Typical Performance vs. Drive Level
10
Input Frequency Range
Output Frequency Range
Conversion Loss
1.5 - 2.0
3.0 - 4.0
<18
15
1.0 - 2.0
2.0 - 4.0
<16
20
1.0 - 2.0
2.0 - 4.0
<17
dBm
GHz
GHz
dB
Performance for Input Signals in the 1.0 - 2.0 GHz Band (+15dBm Drive)
Min.
Fo Isolation (with respect to input level)
3Fo Isolation (with respect to input level)
4Fo Isolation (with respect to input level)
35
40
30
Typ.
50
50
35
Max.
dB
dB
dB
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
3 - 10
HMC157
MICROWAVE CORPORATION
GaAs MMIC FREQUENCY DOUBLER 1 - 2 GHz INPUT
V01.0700
F
EBRUARY
2001
Conversion Loss vs. Drive Level
0
Isolation @ +15 dBm Drive Level *
0
-10
Fo
3Fo
4Fo
CONVERSION GAIN (dB)
-10
ISOLATION (dB)
-20
-30
-40
-50
-60
-70
-80
-90
-100
1
2
3
4
5
6
7
8
-20
3
M
ULTIPLIERS
DIE
7
-30
Input=+10dBm
Input=+15dBm
Input=+20dBm
-40
-50
2
2.5
3
3.5
4
4.5
5
OUTPUT FREQUENCY (GHz)
9
10
FREQUENCY (GHz)
* With respect to input level
Input Return Loss vs. Drive level
0
Output Return Loss vs. Drive Level
0
-2
OUTPUT RETURN LOSS (dB)
INPUT RETURN LOSS (dB)
-5
-10
-15
-20
-25
-30
1
2
3
4
5
6
7
FREQUENCY (GHz)
Input=+10dBm
Input=+15dBm
Input=+20dBm
-4
-6
-8
-10
-12
-14
-16
-18
-20
1
2
3
4
5
6
OUTPUT FREQUENCY (GHz)
Input=+10dBm
Input=+15dBm
Input=+20dBm
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
3 - 11
HMC157
MICROWAVE CORPORATION
GaAs MMIC FREQUENCY DOUBLER 1 - 2 GHz INPUT
F
EBRUARY
2001
V01.0700
Schematic
Absolute Maximum Ratings
Input Drive
Storage Temperature
Operating Temperature
+27 dBm
-65 to +150 deg C
-55 to +125 deg C
3
M
ULTIPLIERS
Outline Drawing
1.168
(0.046)
DIE
1.041
0.127
(0.005)
(0.041)
4415
RF IN
RFin
Hittite
RF OUT
RFout
1.168
(0.046)
0.584
(0.023)
0.584
(0.023)
THREE PADS ON EACH CORNER MUST BE BONDED TO GROUND (12 TOTAL).
ALL DIMENSIONS IN MILLIMETERS (INCHES)
ALL TOLERANCES ARE ±0.025 (0.001)
DIE THICKNESS IS 0.254 (0.010)
BOND PADS ARE 0.100 (0.004) SQUARE
EQUALLY SPACED AT 0.150 (0.006) CENTERS
BACKSIDE METALLIZATION: NONE
BOND PAD METALLIZATION: GOLD
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
3 - 12
HMC157
MICROWAVE CORPORATION
GaAs MMIC FREQUENCY DOUBLER 1 - 2 GHz INPUT
V01.0700
F
EBRUARY
2001
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid
cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes (
see page 8 - 2
).
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and
bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent twee-
zers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, twee-
zers, or fingers.
3
M
ULTIPLIERS
DIE
Mounting
The chip is not back-metallized and can be die mounted with electrically conductive epoxy. The mounting
surface should be clean and flat.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around
the perimeter of the chip once it is placed into position.
Cure epoxy per the manufacturer's schedule.
Wire Bonding
Ball or wedge bond with 1.0 diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22
grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds.
Wirebonds should be started on the chip and terminated on the package. RF bonds should be as short as
possible.
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
3 - 13
聊聊、笑笑、闹闹
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
