2N5038 & 2N5039
NPN High Power Silicon Transistor
Rev. V3
Features
•
Available in JAN, JANTX, JANTXV per MIL-PRF-19500/439
•
TO-3 (TO-204AA) Package
•
Ideal for Use in Switching Regulators, Inverters, Power
Amplifiers and Oscillators
Electrical Characteristics (T
A
= +25
o
C unless otherwise specified)
Parameter
Test Conditions
Symbol Units
Min.
Max.
Collector
-
Emitter Breakdown Voltage
I
C
= 200 mA dc, 2N5038
I
C
= 200 mA dc, 2N5039
V
CE
= 150 V dc, 2N5038
V
CE
= 125 V dc, 2N5039
V
EB
= 5.0 V dc
V
CE
= 100 V dc, V
BE
=
-1.5
V dc, 2N5038
V
CE
= 85 V dc, V
BE
=
-1.5
V dc, 2N5039
V
CE
= 70 V dc, 2N5038
V
CE
= 55 V dc, 2N5039
V
(BR)CEO
V dc
90
75
—
—
—
—
—
1.0
1.0
100
5.0
5.0
1.0
1.0
Collector
-
Base Cutoff Current
Emitter
-
Base Cutoff Current
Collector
-
Emitter Cutoff Current
Collector
-
Emitter Cutoff Current
I
CBO
I
EBO
I
CEX1
I
CEO
µA dc
µA dc
µA dc
µA dc
I
C
= 0.5 A dc, V
CE
= 5 Vdc 2N5038
2N5039
Forward Current Transfer Ratio
I
C
= 2.0 A dc, V
CE
= 5 Vdc 2N5038
2N5039
I
C
= 12 A dc, V
CE
= 5 Vdc 2N5038
I
C
= 10 A dc, V
CE
= 5 Vdc 2N5039
h
FE
-
50
30
50
30
15
15
200
150
Collector
-
Emitter Saturation Voltage
I
C
= 12 A dc, I
B
= 1.2 A dc
I
C
= 10 A dc, I
B
= 1.0 A dc
I
C
= 20 A dc, I
B
= 5.0 A dc
I
E
= 25 mA dc
2N5038
2N5039
Both
V
CE(sat)1
V dc
—
1.0
1.0
2.5
—
3.3
Emitter
-
Base Breakdown Voltage
Emitter
-
Base Saturation Voltage
V
(BR)EBO
V dc
V
BE(sat)
V dc
7.0
__
I
C
= 20 A dc, I
B
= 5.0 A dc
Base
-
Emitter Voltage (nonsaturated)
1
I
C
= 12 A dc, V
CE
= 5.0 V dc 2N5038
I
C
= 10 A dc, V
CE
= 5.0 V dc 2N5039
V
BE
V dc
1.8
1.8
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for additional data sheets and product information.
For further information and support please visit:
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2N5038 & 2N5039
NPN High Power Silicon Transistor
Rev. V3
Parameter
Collector
-
Emitter Cutoff Current
Test Conditions
T
A
= +150
o
C
V
CE
= 100 V dc, V
BE
=
-1.5
V dc, 2N5038
V
CE
= 85 V dc, V
BE
=
-1.5
V dc, 2N5039
T
A
=
-55
o
C
V
CE
= 5 V dc, I
C
= 12 A dc, 2N5038
V
CE
= 5 V dc, I
C
= 10 A dc, 2N5039
Symbol Units
I
CEX2
µA dc
Min.
—
Max.
100
100
Forward Current Transfer Ratio
Dynamic Characteristics
Magnitude of Small-Signal Short-Circuit
Forward Current Transfer Ratio
Open Circuit Output Capacitance
h
FE4
-
10
10
I
C
= 2 A dc, V
CE
= 10 V dc, f = 5 MHz
V
CB
= 10 V dc, I
E
= 0 A dc,
100 kHz ≤ f ≤ 1 MHz
| h
FE
|
C
obo
pF
12
—
48
500
Switching Characteristics
V
CC
= 30 + 2.0V dc; I
C
= 12 A dc; I
B1
= 1.2 A dc 2N5038
V
CC
= 30 + 2.0Vdc; I
C
= 10 A dc; I
B1
= 1.0 A dc 2N5039
V
CC
= 30 + 2.0Vdc; I
C
= 12 A dc; I
B1
=
-I
B2
= 1.2 A dc 2N5038
V
CC
= 30 + 2.0Vdc; I
C
= 10 A dc; I
B1
=
-I
B2
= 1.0 A dc 2N5039
Symbol
t
on
t
on
t
off
t
off
Max. Value
0.5 µS
0.5 µS
2.0 µS
2.0 µS
2
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Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N5038 & 2N5039
NPN High Power Silicon Transistor
Rev. V3
Absolute Maximum Ratings (T
A
= +25
o
C unless otherwise specified)
Ratings
Collector
-
Emitter Voltage
2N5038
2N5039
Collector
-
Base Voltage
2N5038
2N5039
Emitter
-
Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ T
C
= +25°C
(1)
Operating & Storage Temperature Range
Symbol
V
CEO
Value
90 V dc
75 V dc
150 V dc
125 V dc
7.0 V dc
5.0 A dc
20 A dc
V
CBO
V
EBO
I
B
I
C
P
T
140 W
T
J
, T
STG
-65°C
to +200°C
Thermal Characteristics
Characteristics
Thermal Resistance, Junction to Case
(2)
Symbol
R
θJC
Max. Value
1.25°C/W
(1) Derate linearly 800 mW / °C for T
A
> + 25°C
(2) See figure 4 of MIL-PRF-19500/439 for thermal impedance curve.
Safe Operating Area
DC Tests:
Test 1:
Test 2:
Test 3:
Test 4:
Test 4:
T
C
= +25 °C, 1Cycle, t = 1.0 s
V
CE
= 28 V dc, I
C
= 5.0 A dc
V
CE
= 45 V dc, I
C
= 0.9 A dc
V
CE
= 7.0 V dc, I
C
= 20 A dc,
V
CE
= 90 V dc, I
C
= 0.23 A dc, 2N5038
V
CE
= 75 V dc, I
C
= 0.32 A dc, 2N5039
3
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N5038 & 2N5039
NPN High Power Silicon Transistor
Rev. V3
Outline Drawing (TO-3)
4
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N5038 & 2N5039
NPN High Power Silicon Transistor
Rev. V3
Outline Drawing
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vided by VPT Components as a service to its customers and may be used for informational purposes only. Ex-
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5
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
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