The documentation and process conversion measures
necessary to comply with this document shall be
completed by 10 August 2004
INCH-POUND
MIL-PRF-19500/357H
10 May 2004
MIL-PRF-19500/357G
29 August 2002
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, AMPLIFIER
TYPES 2N3634 THROUGH 2N3637, 2N3634UB THROUGH 2N3637UB, 2N3634L THROUGH 2N3637L,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP, silicon, low-power amplifier, and
switching transistors. Four levels of product assurance are provided for each encapsulated device type as specified
in MIL-PRF-19500 and two levels of product assurance are provided for unencapsulated devices.
1.2 Physical dimensions. See figure 1 (TO-5 and TO-39), figure 2 (UB), and figure 3 (JANHC and JANKC).
*
1.3 Maximum ratings, unless otherwise specified T
A
= +25°C.
P
T
(1)
T
A
=
+25°C
W
1
1
1
1
1
1
1
1
P
T
(2)
T
C
=
+25°C
W
5
N/A
5
N/A
5
N/A
5
N/A
P
T
(3)
T
SP
=
+25°C
W
N/A
1.5
N/A
1.5
N/A
1.5
N/A
1.5
R
θJA
°C/W
175
175
175
175
175
175
175
175
R
θJC
°C/W
35
N/A
35
N/A
35
N/A
35
N/A
R
θJSP
°C/W
N/A
90
N/A
90
N/A
90
N/A
90
I
C
A dc
1
1
1
1
1
1
1
1
T
J
and
T
STG
°C
-65 to
+200
V
CBO
V dc
140
140
140
140
175
175
175
175
V
CEO
V dc
140
140
140
140
175
175
175
175
V
EBO
V dc
5
5
5
5
5
5
5
5
Types
2N3634, 2N3634L,
2N3634UB
2N3635, 2N3635L,
2N3635UB
2N3636, 2N3636L,
2N3636UB
2N3637, 2N3637L,
2N3637UB
(1) See figure 4.
(2) See figure 5.
(3) See figure 6.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, or emailed to
Semiconductor@dscc.dla.mil.
Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at
http://www.dodssp.daps.mil.
AMSC N/A
FSC 5961
MIL-PRF-19500/357H
1.4 Primary electrical characteristics at T
A
= +25°C.
h
FE
at V
CE
= 10 V dc
Types
h
FE1
I
C
= 0.1
mA dc
h
FE2
I
C
= 1.0
mA dc
h
FE3
I
C
= 10
mA dc
h
FE4
I
C
= 50
mA dc
(1)
Min
50
50
100
100
50
50
100
100
V
BE(sat)1
I
C
= 10 mA dc
Max
150
150
300
300
150
150
300
300
h
FE5
I
C
= 150
mA dc
(1)
Min
30
30
60
60
30
30
60
60
V
BE(sat)2
I
C
= 50 mA dc 1/
I
B
= 5 mA dc
V dc
0.65
0.90
t
d
Max
|h
fe
|
V
CE
= 30 V dc
I
C
= 30 mA dc
f = 100 Mhz
C
obo
V
CB
= 20 V dc
I
E
= 0
100 Khz
≤f ≤
1 Mhz
Max
10
10
10
10
10
10
10
10
(1)
2N3634, 2N3634L,
2N3634UB
2N3635, 2N3635L,
2N3635UB
2N3636, 2N3636L,
2N3636UB
2N3637, 2N3637L,
2N3637UB
Min
25
25
55
55
25
25
55
55
V
CE(sat)1
I
C
= 10 mA dc
(1)
Min
45
45
90
90
45
45
90
90
V
CE(sat)2
I
C
= 50 mA dc
(1)
Min
50
50
100
100
50
50
100
100
Min
1.5
1.5
2.0
2.0
1.5
1.5
2.0
2.0
Max
8.0
8.0
8.5
8.5
8.0
8.0
8.5
8.5
Switching parameters
t
r
t
s
t
f
(1)
(1)
(1)
I
B
= 1 mA dc
V dc
Minimum
Maximum
0.3
I
B
= 5 mA dc
V dc
0.6
I
B
= 1 mA dc
V dc
0.8
ns
100
ns
100
ns
500
ns
150
(1) Pulsed (see 4.5.1).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
-
Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750
-
Test Methods for Semiconductor Devices.
(Copies of these documents are available online at
http://assist.daps.dla.mil/quicksearch/
or
http://www.dodssp.daps.mil/
or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,
Philadelphia, PA 19111-5094.)
2
MIL-PRF-19500/357H
Ltr
CD
CH
HD
LC
LD
LL
LU
L1
L2
P
Q
r
TL
TW
α
Term 1
Term 2
Term 3
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.305
.335
7.75
8.51
.240
.260
6.10
6.60
.335
.370
8.51
9.40
.200 TYP
5.08 TYP
.016
.021
0.41
0.53
See notes 7, 9, and 10
.016
.019
0.41
0.48
.050
1.27
.250
6.35
.100
2.54
.050
1.27
.010
0.254
.029
.045
0.74
1.14
.028
.034
0.71
0.86
45° TP
45° TP
Emitter
Base
Collector
Notes
7
6
7
7
7
5
8
4
3
6
TO-5
TO-39
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Beyond r maximum, TW must be held to a minimum length of .021 inch (0.53 mm).
4. TL measured from maximum HD.
5. CD shall not vary more than ±.010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
6. Leads at gauge plane .054 - .055 inch (1.37 - 1.40 mm) below seating plane shall be within .007 inch (0.18
mm) radius of true position (TP) at a maximum material condition (MMC) relative to the tab at MMC. The
device may be measured by direct methods or by gauge and gauging procedure.
7. LU applies between L1 and L2. LD applies between L2 and L minimum. Diameter is uncontrolled in L1 and
beyond LL minimum.
8. r (radius) applies to both inside corners of tab.
9. For transistor types 2N3634 through 2N3637, LL is .500 inch (12.70 mm) minimum, and .750 inch (19.50
mm) maximum (TO-39).
10. For transistor types 2N3634L through 2N3637L, LL is 1.500 inches (38.10 mm) minimum, and 1.750 inches
(44.45 mm) maximum (TO-5).
11. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
FIGURE 1. Physical dimensions (TO-5 and TO-39).
3
MIL-PRF-19500/357H
Symbol
BH
BL
BW
CL
CW
LL1
LL2
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.046
.056
1.17
1.42
.115
.128
2.92
3.25
.085
.108
2.16
2.74
.115
.128
2.92
3.25
.085
.108
2.16
2.74
.022
.038
0.56
0.96
.017
.035
0.43
0.89
Note
Symbol
LS1
LS2
LW
r
r1
r2
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.035
.039
0.89
0.99
.071
.079
1.80
2.01
.016
.024
0.41
0.61
.008
0.20
.012
0.31
.022
0.56
Note
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Hatched areas on package denote metallized areas
4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.
5. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
* FIGURE 2. Physical dimensions, surface mount 2N3634UB through 2N3637UB (UB version).
4
MIL-PRF-19500/357H
1.
2.
3.
4.
Chip size..............…24 x 26 mils
±
2 mils.
Chip thickness.....…10
±
1.5mils nominal.
Top metal................Aluminum 15,000Å minimum, 18,000Å nominal.
Back metal..............A. Al/Ti/Ni/Ag 12kÅ/3kÅ/7kÅ/7kÅmin.,15kÅ/5kÅ/10kÅ/10kÅ nominal.
B. Gold 2,500Å minimum, 3,000Å nominal.
C. Eutectic Mount – No Gold.
5. Backside. ............…Collector.
6. Bonding pad ...........B = 4 x 6 mils, E = 4 x 5.5 mils.
* FIGURE 3. JANHCA and JANKCA die dimensions.
5
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
