PD - 91438A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
®
TRANSISTOR
-60 Volt, 0.05Ω, RAD HARD HEXFET
Ω
International Rectifier’s P-Channel RAD HARD technology
HEXFETs demonstrate excellent threshold voltage stability
and breakdown voltage stability at total radiation doses as
high as 3 X 10
5
Rads (Si). Under
identical
pre- and post-
radiation test conditions, International Rectifier’s P-Channel RAD
HARD HEXFETs retain
identical
electrical specifications up
to 1 x 10
5
Rads (Si) total dose. No compensation in gate drive
circuitry is required. These devices are also capable of surviv-
ing transient ionization pulses as high as 1 x 10
12
Rads (Si)/
Sec, and return to normal operation within a few microsec-
onds. Single Event Effect (SEE) testing of International Recti-
fier P-Channel RAD HARD HEXFETs has demonstrated
immunity to SEE failure. Since the P-Channel RAD HARD
process utilizes International Rectifier’s patented HEXFET tech-
nology, the user can expect the highest quality and reliability in
the industry.
IRHM9064
IRHM 93064
JANSR2N7424
P-CHANNEL
RAD HARD
Product Summary
Part Number
IRHM9064
IRHM93064
BV
DSS
-60V
-60V
R
DS(on)
0.05Ω
0.05Ω
I
D
-35A
-35A
Features:
Radiation Hardened up to 1 x 10
5
Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Ceramic Eyelets
n
n
n
n
n
n
n
n
n
n
P-Channel RAD HARD HEXFET transistors also feature all
n
of the well-established advantages of MOSFETs, such as
n
voltage control, very fast switching, ease of paralleling and
n
temperature stability of the electrical parameters. They are
well-suited for applications such as switching power supplies,
motor controls, inverters, choppers, audio amplifiers and high-
energy pulse circuits in space and weapons environments.
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
-35
-30
-192
250
2.0
±20
500
-35
25
-5.5
Pre-Irradiation
IRHM9064/IRHM93064
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
-55 to 150
C
300 ( for 5 Sec.)
9.3 (typical)
g
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1
7/6/98
IRHM9064, IRHM93064, JANSR2N7424
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS/∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
-60
—
—
—
-2.0
18
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
-0.056
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8.7
8.7
—
—
0.050
0.053
-4.0
—
-25
-250
-100
100
300
70
91
35
150
200
200
—
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
VGS = -12V, ID =-30A
VGS = -12V, ID = -35A
VDS = VGS, ID = -1.0mA
VDS > -15V, IDS = -30A
VDS= 0.8 x Max Rating,VGS=0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS =-12V, ID = -35A
VDS = Max Rating x 0.5
VDD = -30V, ID = -35A,
RG = 2.35Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LD
LS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
nA
nC
ns
nH
Measured from drain
Modified MOSFET symbol
lead, 6mm (0.25 in) from showing the internal induc-
package to center of die. tances.
Measured from source
lead, 6mm (0.25 in) from
package to source bond-
ing pad.
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
6700
2800
920
—
—
—
pF
VGS = 0V, VDS = -25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
-35
-192
-3.0
270
2.5
Test Conditions
Modified MOSFET symbol
showing the integral reverse
p-n junction rectifier.
T
j
= 25°C, IS = -35A, VGS = 0V
Tj = 25°C, IF = -35A, di/dt
≤
-100A/µs
VDD
≤
-50V
A
V
ns
µC
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
R thJC
RthCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Min Typ Max Units
—
—
—
— 0.50
0.21 —
—
48
W/°C
Test Conditions
Typical socket mount
* Current is limited by pin diameter ( Die current is 48A , see fig. 4 & 9 )
2
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IRHM9064, IRHM93064, JANSR2N7424
Radiation Characteristics
Pre-Irradiation
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The hard-
ness assurance program at International Rectifier
comprises 3 radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019 condition A. International Rectifier has
imposed a standard gate condition of -12 volts per
note 6 and a V
DS
bias condition equal to 80% of the
device rated voltage per note 7. Pre- and post-irra-
diation limits of the devices irradiated to 1 x 10
5
Rads
(Si) are identical and are presented in Table 1, col-
umn 1, IRHM9064. Post-irradiation limits of devices
irradiated to 3 x 10
5
Rads(Si) are presented in Table
1, column 2, IRHM93064. The values in Table 1 will
be met for either of the two low dose rate test cir-
cuits that are used. Both pre- and post-irradiation
performance are tested and specified using the same
drive circuitry and test conditions in order to provide
a direct comparison. It should be noted that after an
irradiation level of 1 x 10
5
Rads (Si) no changes in
limits are specified in DC parameters. After an irra-
diation of 3 x 10
5
only the
V
GS(th)
max is affected.
High dose rate testing may be done on a special
request basis using a dose rate up to 1 x 10
12
Rads
(Si)/Sec (See table 2).
International Rectifier radiation hardened HEXFETs
have been characterized in heavy ion Single Event
Effects (SEE) environments. Single Event Effects char-
acterization is shown in Table 3.
Table 1. Low Dose Rate
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
V
SD
IRHM9064 IRHM93064
100K Rads (Si) 300K Rads (Si)
Units
Test Conditions
V
GS
= 0V, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= -20V
V
GS
= 20 V
V
DS
=0.8 x Max Rating, V
GS
=0V
V
GS
= -12V, I
D
=-30A
TC = 25°C, IS = -35A,V
GS
= 0V
Min
Drain-to-Source Breakdown Voltage -60
Gate Threshold Voltage
-2.0
Gate-to-Source Leakage Forward
—
Gate-to-Source Leakage Reverse
—
Zero Gate Voltage Drain Current
—
Static Drain-to-Source
—
On-State Resistance One
Diode Forward Voltage
—
Max
—
-4.0
-100
100
-25
0.05
-3.0
Min
-60
-2.0
—
—
—
—
—
Max
—
-5.0
-100
100
-25
0.05
-3.0
V
nA
µA
Ω
V
Table 2. High Dose Rate
Parameter
V
DSS
IPP
di/dt
L1
10
11
Rads (Si)/sec 10
12
Rads (Si)/sec
Drain-to-Source Voltage
Min Typ Max Min Typ Max
Units
Test Conditions
—
— -48 —
—
-48
V
Applied drain-to-source voltage during
gamma-dot
— -100 —
— -100 —
A
Peak radiation induced photo-current
— -800 —
— -160 — A/µsec Rate of rise of photo-current
0.1 —
— 0.8 —
—
µH
Circuit inductance required to limit di/dt
Table 3. Single Event Effects
Ion
Cu
LET (Si)
(MeV/mg/cm
2
)
28
Fluence
(ions/cm
2
)
3x 10
5
Range
(µm)
~43
V
DS
Bias
(V)
-60
V
GS
Bias
(V)
5
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3
IRHM9064, IRHM93064, JANSR2N7424
Pre-Irradiation
1000
-I
D
, Drain-to-Source Current (A)
100
-5.0V
20µs PULSE WIDTH
T = 25 C
J
°
1
10
100
-I
D
, Drain-to-Source Current (A)
VGS
TOP
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
1000
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
100
-5.0V
20µs PULSE WIDTH
T = 150 C
J
°
1
10
100
10
0.1
10
0.1
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.5
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -48A
-I
D
, Drain-to-Source Current (A)
3.0
2.5
T
J
= 25
°
C
T
J
= 150
°
C
2.0
100
1.5
1.0
10
5
6
7
8
V DS = -25V
20µs PULSE WIDTH
10
11
9
12
0.5
0.0
-60 -40 -20
V
GS
= -12V
0
20
40
60
80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature(
°
C)
Fig 3.
Typical Transfer Characteristics
4
Fig 4.
Normalized On-Resistance
Vs. Temperature
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IRHM9064, IRHM93064, JANSR2N7424
Pre-Irradiation
12000
10000
-V
GS
, Gate-to-Source Voltage (V)
C, Capacitance (pF)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= -35A
V
DS
=-48V
V
DS
=-30V
15
8000
Ciss
6000
10
4000
C
oss
5
2000
C
rss
1
10
100
0
0
0
100
FOR TEST CIRCUIT
SEE FIGURE 13
200
300
400
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
-I
D
, Drain Current (A)
I
100
T
J
= 150
°
C
100
100us
10
1ms
10ms
10
1
T
J
= 25
°
C
V
GS
= 0 V
1.0
2.0
3.0
4.0
5.0
0.1
0.0
1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
100
1000
V
SD
,Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
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Fig 8.
Maximum Safe Operating Area
5
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