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JANTXV2N3499

产品描述Small Signal Bipolar Transistor, 0.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, SIMILAR TO TO-5, 3 PIN
产品类别分立半导体    晶体管   
文件大小390KB,共36页
制造商Raytheon Company
官网地址https://www.raytheon.com/
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JANTXV2N3499概述

Small Signal Bipolar Transistor, 0.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, SIMILAR TO TO-5, 3 PIN

JANTXV2N3499规格参数

参数名称属性值
厂商名称Raytheon Company
包装说明SIMILAR TO TO-5, 3 PIN
Reach Compliance Codeunknown
外壳连接COLLECTOR
最大集电极电流 (IC)0.5 A
集电极-发射极最大电压100 V
配置SINGLE
最小直流电流增益 (hFE)20
JESD-30 代码O-MBCY-W3
元件数量1
端子数量3
封装主体材料METAL
封装形状ROUND
封装形式CYLINDRICAL
极性/信道类型NPN
认证状态Not Qualified
参考标准MIL-19500/366K
表面贴装NO
端子形式WIRE
端子位置BOTTOM
晶体管应用SWITCHING
晶体管元件材料SILICON
最大关闭时间(toff)1150 ns
最大开启时间(吨)115 ns

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INCH-POUND
The documentation and process conversion measures
necessary to comply with this document shall be
completed by 22 January 2008.
MIL-PRF-19500/366M
22 October 2007
SUPERSEDING
MIL-PRF-19500/366L
26 July 2006
PERFORMANCE SPECIFICATION SHEET
* SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, AMPLIFIER,
TYPES 2N3498, 2N3498L, 2N3498U4, 2N3499, 2N3499L, 2N3499U4, 2N3500, 2N3500L, 2N3500U4, 2N3501,
2N3501L, 2N3501UB, AND 2N3501U4, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC, JANSM, JANSD,
JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHCB, JANHCC, JANKCB, JANKCC, JANKCCM, JANKCCD,
JANKCCP, JANKCCL, JANKCCR, JANKCCF, JANKCCG, AND, JANKCCH
Device types 2N3498, 2N3499, 2N3500 and their corresponding L
suffix versions are inactive for new design after 14 April 1995.
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power amplifier and
switching transistors. Four levels of product assurance are provided for each device type as specified in
MIL-PRF-19500. Two levels of product assurance are provided for die. RHA level designators; “M”, “D”, “P”, “L”, “R”,
“F”, “G”, and “H” are appended to the device prefix to identify devices which have passed RHA requirements.
* 1.2 Physical dimensions. See figure 1 (similar to TO-5, TO-39), figure 2 (surface mount, 2N3501UB), figure 3
(U4), and figures 4 and 5 (die).
1.3 Maximum ratings. Unless otherwise specified T
A
= +25°C.
Types
P
T
T
A
=
+25°C
(1)
W
2N3498, L
2N3498U4
2N3499, L
2N3499U4
2N3500, L
2N3500U4
2N3501, L
2N3501U4
2N3501UB
1
1
1
1
1
1
1
1
.5
P
T
T
C
=
+25°C
(1)
W
5
4
5
4
5
4
5
4
N/A
P
T
T
SP
=
+25°C
(1)
W
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
1.5
°C
/W
175
175
175
175
175
175
175
175
325
°C
/W
30
15
30
15
30
15
30
15
N/A
°C
/W
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
90
R
θJA
R
θJC
R
θJSP
V
CBO
V
CEO
V
EBO
I
C
T
J
and
T
STG
V dc
100
100
100
100
150
150
150
150
150
V dc
100
100
100
100
150
150
150
150
150
V dc
6
6
6
6
6
6
6
6
6
mA dc
500
500
500
500
300
300
300
300
300
°C
-65 to
+200
(1) See derating curve figures 6, 7, 8, 9, and 10.
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus,
ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil.
Since contact information can change, you may want to verify the currency of this address information using the
ASSIST Online database at
http://assist.daps.dla.mil
.
AMSC N/A
FSC 5961

JANTXV2N3499相似产品对比

JANTXV2N3499 JAN2N3500L JANTX2N3499L JANTX2N3500L JAN2N3501L JANTXV2N3501L PWC1206AS-2K8JT1 PWC1206AS-309RDI JANTXV2N3498 JANTX2N3501L
描述 Small Signal Bipolar Transistor, 0.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, SIMILAR TO TO-5, 3 PIN Small Signal Bipolar Transistor, 0.3A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, SIMILAR TO TO-5, 3 PIN Small Signal Bipolar Transistor, 0.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, SIMILAR TO TO-5, 3 PIN Small Signal Bipolar Transistor, 0.3A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, SIMILAR TO TO-5, 3 PIN Small Signal Bipolar Transistor, 0.3A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, SIMILAR TO TO-5, 3 PIN Small Signal Bipolar Transistor, 0.3A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, SIMILAR TO TO-5, 3 PIN Fixed Resistor, Metal Glaze/thick Film, 0.5W, 2800ohm, 200V, 5% +/-Tol, 100ppm/Cel, Surface Mount, 1206, CHIP Fixed Resistor, Metal Glaze/thick Film, 0.5W, 309ohm, 200V, 0.5% +/-Tol, 100ppm/Cel, Surface Mount, 1206, CHIP Small Signal Bipolar Transistor, 0.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, SIMILAR TO TO-5, 3 PIN Small Signal Bipolar Transistor, 0.3A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, SIMILAR TO TO-5, 3 PIN
包装说明 SIMILAR TO TO-5, 3 PIN SIMILAR TO TO-5, 3 PIN SIMILAR TO TO-5, 3 PIN SIMILAR TO TO-5, 3 PIN SIMILAR TO TO-5, 3 PIN SIMILAR TO TO-5, 3 PIN CHIP CHIP SIMILAR TO TO-5, 3 PIN SIMILAR TO TO-5, 3 PIN
Reach Compliance Code unknown unknown unknown unknown unknown unknown compliant compliant unknown unknown
端子数量 3 3 3 3 3 3 2 2 3 3
封装形式 CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL SMT SMT CYLINDRICAL CYLINDRICAL
表面贴装 NO NO NO NO NO NO YES YES NO NO
外壳连接 COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR - - COLLECTOR COLLECTOR
最大集电极电流 (IC) 0.5 A 0.3 A 0.5 A 0.3 A 0.3 A 0.3 A - - 0.5 A 0.3 A
集电极-发射极最大电压 100 V 150 V 100 V 150 V 150 V 150 V - - 100 V 150 V
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE - - SINGLE SINGLE
最小直流电流增益 (hFE) 20 15 20 15 20 20 - - 15 20
JESD-30 代码 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 - - O-MBCY-W3 O-MBCY-W3
元件数量 1 1 1 1 1 1 - - 1 1
封装主体材料 METAL METAL METAL METAL METAL METAL - - METAL METAL
封装形状 ROUND ROUND ROUND ROUND ROUND ROUND - - ROUND ROUND
极性/信道类型 NPN NPN NPN NPN NPN NPN - - NPN NPN
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified - - Not Qualified Not Qualified
参考标准 MIL-19500/366K MIL-19500/366K MIL-19500/366K MIL-19500/366K MIL-19500/366K MIL-19500/366K - - MIL-19500/366K MIL-19500/366K
端子形式 WIRE WIRE WIRE WIRE WIRE WIRE - - WIRE WIRE
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM - - BOTTOM BOTTOM
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING - - SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON - - SILICON SILICON
最大关闭时间(toff) 1150 ns 1150 ns 1150 ns 1150 ns 1150 ns 1150 ns - - 1150 ns 1150 ns
最大开启时间(吨) 115 ns 115 ns 115 ns 115 ns 115 ns 115 ns - - 115 ns 115 ns
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