FCX493
SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
SUMMARY
V
CEO
= 100V : I
C
= 1A
Complementary type FCX593
DESCRIPTION
Packaged in the SOT89 outline this 100V device provides excellent high
performance and is ideally suited to load management functions.
FEATURES
•
1 amp continuous current
•
Low saturation voltages
SOT89
APPLICATIONS
•
Load management functions
•
Solenoid, relay and actuator drivers
•
DC-DC modules
DEVICE MARKING
N93
PINOUT
ORDERING INFORMATION
DEVICE
FCX493TA
FCX493TC
REEL
SIZE
7”
13"
TAPE
WIDTH
12mm
embossed
12mm
embossed
QUANTITY PER
REEL
1000 units
4000 units
TOP VIEW
ISSUE 5 - OCTOBER 2005
1
SEMICONDUCTORS
FCX493
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Peak pulse current
Base current
Power dissipation at T
amb
=25°C
Operating and storage temperature range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
j
:T
stg
VALUE
120
100
5
1
2
200
1
-65 to +150
UNIT
V
V
V
A
A
mA
W
°C
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
PARAMETER
Breakdown voltages
SYMBOL
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
Collector cut-off currents
I
CBO
I
CES
Emitter cut-off current
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Base-emitter
turn on voltage
Static forward current transfer
ratio
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
100
100
60
20
150
10
300 s; duty cycle
2%.
MIN.
120
100
5
100
100
100
0.3
0.6
1.15
1.0
MAX.
UNIT
V
V
V
nA
nA
nA
V
V
V
V
CONDITIONS
I
C
=100µA
I
C
=10mA*
I
E
=100µA
V
CB
=100V
V
CES
=100V
V
EB
=4V
I
C
=500mA, I
B
=50mA
I
C
=1A, I
B
=100mA
I
C
=1A, I
B
=100mA
I =1A, V
CE
=10V
C
I
C
=1mA, V
CE
=10V*
I
C
=250mA, V
CE
=10V*
I
C
=500mA, V
CE
=10V*
I
C
=1A, V
CE
=10V*
300
Transition frequency
Output capacitance
f
T
C
obo
MHz
pF
I
C
=50mA, V
CE
=10V
f=100MHz
V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width
ISSUE 5 - OCTOBER 2005
SEMICONDUCTORS
2
FCX493
PACKAGE OUTLINE
PAD LAYOUT DETAILS
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
Millimeters
DIM
Min
A
b
b1
b2
c
D
1.40
0.38
-
1.50
0.28
4.40
Max
1.60
0.48
0.53
1.80
0.44
4.60
Min
0.550
0.015
-
0.060
0.011
0.173
Max
0.630
0.019
0.021
0.071
0.017
0.181
e
E
E1
G
H
-
Inches
DIM
Min
1.40
3.75
-
2.90
2.60
-
Max
1.50
4.25
2.60
3.00
2.85
-
Min
0.055
0.150
-
0.114
0.102
-
Max
0.059
0.167
0.102
0.118
0.112
-
Millimeters
Inches
© Zetex Semiconductors plc 2005
Europe
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park
Chadderton, Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
ISSUE 5 - OCTOBER 2005
5
SEMICONDUCTORS
意法半导体-低功耗射频
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