FMMT591
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
PNP Silicon
General Purpose Transistor
FEATURES
3
SOT-23
Collector
3
1
Dim
A
B
C
D
Min
2.800
1.200
0.890
0.370
1.780
0.013
0.085
0.450
0.890
2.100
0.450
Max
3.040
1.400
1.110
0.500
2.040
0.100
0.177
0.600
1.020
2.500
0.600
Power dissipation
P
CM
: 0.5 W
Collector Current
I
CM
: -1 A
Collector-base voltage
1
2
Base
A
L
3
2
Emitter
G
H
J
K
L
S
V
V
(BR)CBO
: -80 V
Operating & storage junction temperature
T
j
, T
stg
: - 55 C ~ + 150 C
O
O
Top View
1
2
B S
V
G
C
D
H
K
J
Marking: 591
All Dimension in mm
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
1
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
DC current gain
h
FE(3)
1
1
unless
otherwise
specified）
MIN
-
80
-
60
-
5
-
0.1
-
0.1
TYP
MAX
UNIT
V
V
V
μA
μA
Test
conditions
Ic=-
100
μA,I
E
=0
Ic=-
10
mA,I
B
=0
I
E
=-
100
μA,I
C
=0
V
CB
=-
60
V,I
E
=0
V
EB
=-
4
V,I
C
=0
V
CE
=-
5
V,I
C
=-
1
mA
V
CE
=-
5
V,I
C
=-
500
mA
V
CE
=-
5
V,I
C
=-
1
A
V
CE
=-
5
V,I
C
=-2A
100
100
80
15
-0.3
-
0.6
V
V
V
V
MHz
300
h
FE(4)
1
V
CE(sat)1
Collector-emitter saturation voltage
V
CE(sat)2
1
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
1
1
I
C
=-
500
mA,I
B
=-
50
mA
I
C
=-
1
A,I
B
=-
100
mA
I
C
=-
1
A,I
B
=-
100
mA
V
CE
=-
5
V,I
C
=-
1
A
V
CE
=-
10
V,I
C
=-
50
mA,,f=
100
MHz
V
CB
=-
10
V,f=
1
MHz
V
BE(sat)
1
V
BE
1
-1.2
-
1
f
T
C
ob
150
10
pF
Measured under pulsed conditions,Pulse width=300μs, Duty cycle≤2%.
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of
2
FMMT591
Elektronische Bauelemente
PNP Silicon
General Purpose Transistor
TYPICAL CHARACTERISTICS
0.6
0.5
0.4
0.3
0.2
0.1
0
25 C
O
0.6
0.5
0.4
0.3
I
C
/I
B
=10
I
C
/I
B
=50
I
C
/I
B
=10
0.2
0.1
-55 C
+25 C
+100 C
O
O
O
1mA
10mA
100mA
1A
10A
0
1mA
10mA
100mA
1A
10A
I
C
-Collector Current
I
C
-Collector Current
V
CE
(sat)
V I
C
V
CE
(sat)
V I
C
400
V
CE
=5V
I
C
/I
B
=10
1.0
300
+100 C
O
0.8
+25 C
O
200
0.6
0.4
-55 C
+25 C
+100 C
O
O
O
100
-55 C
O
0.2
0
1mA
0
10mA
100mA
1A
10A
1mA
10mA
100mA
1A
10A
I
C
-Collector Current
I
C
-Collector Current
h
FE
V I
C
1.2
1.0
0.8
0.6
0.4
0.2
0
1mA
10mA
100mA
1A
10A
0.01
0.1V
-55 C
+25 C
+100 C
O
O
O
V
BE
(sat)
v I
C
10
1
DC
1s
100ms
10ms
1ms
100us
0.1
1V
10V
100V
I
C
-Collector Current
V
CE
- Collector Emitter Voltage (V)
V
BE
(on)
v I
C
http://www.SeCoSGmbH.com
Safe Operating Area
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
2
of
2
微控制器 MCU
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