CNY17F
No Base Connection
Phototransistor Optocoupler
• FEATURES
• High Current Transfer Ratio
CNY17F-1, 40-80%
CNY17F-2, 63-125%
CNY17F-3, 100-200%
CNY17F-4, 160-320%
• Breakdown Voltage, 5300 V
RMS
• High Collector-Emitter Voltage
•
V
CEO
=70 V
• No Base Terminal Connection for Improved
Common Mode Interface Immunity
• Field-Effect Stable by TRIOS—TRansparent
IOn Shield
• Long Term Stability
• Industry Standard Dual-in-Line Package
• Underwriters Lab File #E52744
V
•
VDE #0884, Available with Option 1
D E
Dimensions in inches (mm)
3
.248 (6.30)
.256 (6.50)
4
5
6
NC
3
.300 (7.62)
typ.
4
Emitter
2
1
pin one ID
Anode
1
Cathode
2
6
Base
5
Collector
.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.130 (3.30)
.150 (3.81)
18°
.031 (0.80) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
3°–9°
.010 (.25)
typ.
.300–.347
(7.62–8.81)
.114 (2.90)
.130 (3.0)
Maximum Ratings
T
A
=25
°
C
Emitter
Reverse Voltage ............................................... 6.0 V
DC Forward Current ...................................... 60 mA
Surge Forward Current (t
≤
10
µ
s)..................... 2.5 A
Total Power Dissipation ............................... 100 mW
Detector
Collector-Emitter Breakdown Voltage................ 70 V
Collector Current ............................................ 50 mA
Collector Current (t
≤
1.0 ms) ......................... 100 mA
Total Power Dissipation ............................... 150 mW
Package
Isolation Test Voltage (between emitter
and detector referred to standard
climate 23/50 DIN 50014) .................... 5300 V
RMS
Creepage ..................................................
≥
7.0 mm
Clearance ..................................................
≥
7.0 mm
Isolation Thickness between Emitter
and Detector ..........................................
≥
0.4 mm
Comparative Tracking Index per
DIN IEC 112/VDE 0303, part 1 ....................... 175
Isolation Resistance (
V
IO
=500 V) ...............
≥
10
11
Ω
Storage Temperature Range ............. –55 to +150
°
C
Ambient Temperature Range ............ –55 to +100
°
C
Junction Temperature..................................... 100
°
C
Soldering Temperature
(max. 10 s, dip soldering:
distance to seating plane
≥
1.5 mm) ........... 260
°
C
DESCRIPTION
The CNY17F is an optocoupler consisting of a Gallium Arsenide infrared
emitting diode optically coupled to a silicon planar phototransistor detec-
tor in a plastic plug-in DIP-6 package.
The coupling device is suitable for signal transmission between two electrically
separated circuits. The potential difference between the circuits to be coupled
is not allowed to exceed the maximum permissible reference voltages.
In contrast to the CNY17 Series, the base terminal of the F type is not con-
nected, resulting in a substantially improved common-mode interference
immunity.
Characteristics
T
A
=25
°
C
Parameter
Emitter
Forward Voltage
Breakdown Voltage
Reverse Current
Capacitance
Thermal Resistance
Detector
Capacitance
Symbol
Value
Unit
Condition
V
F
V
BR
I
R
C
O
R
thJA
C
CE
C
BC
C
EB
1.25 (
≤
1.65) V
≥
6.0
0.01 (
≤
10)
25
750
µ
A
pF
K/W
I
F
=60 mA
I
R
=10
µ
A
V
R
=6.0 V
V
R
=0 V, f=1.0 MHz
—
5.2
6.5
7.5
500
0.25 (
≤
0.4)
0.6
pF
V
CE
=5.0 V,
f=1.0 MHz
Thermal Resistance
Package
Saturation Voltage,
Collector-Emitter
Coupling
Capacitance
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–72
R
thJA
V
CEsat
C
C
K/W
—
V
pF
I
F
=10 mA
I
C
=2.5 mA
—
March 17, 2000-13
Current Transfer Ratio
I
C
/
I
F
at
V
CE
=5.0 V, 25
°
C
and Collector-Emitter Leakage Current by dash number
-1
-2
63-125
45 (>22)
2.0 (≤ 50)
-3
100–200
70 (>34)
-4
160–320
90 (>56)
nA
Unit
%
Figure 3. Current transfer ratio versus diode
current
(
T
A
=–25
°
C,
V
CE
=5.0 V)
I
C
/
I
F
=f (
I
F
)
I
C
/
I
F
at
V
CE
=5.0 V
(
I
F
=10 mA)
I
C
/
I
F
at
V
CE
=5.0 V
(
I
F
=1.0 mA)
Collector-Emitter
Leakage Current
(
V
CE
=10 V) (
I
CEO
)
40–80
30 (>13)
2.0 (≤ 50)
5.0 (≤ 100)
Figure 1. Linear operation
(without saturation)
I
F
R
L
=75
Ω
I
C
45
Ω
V
CC
=5 V
1
2
3
4
I
F
=10 mA,
V
CC
=5.0 V,
T
A
=25
°
C
Load Resistance
Turn-On Time
Rise Time
Turn-Off Time
Fall Time
Cut-Off Frequency
R
L
t
ON
t
r
t
OFF
t
f
f
CO
75
3.0
2.0
2.3
2.0
250
W
µs
Figure 4. Current transfer ratio versus diode
current
(
T
A
=0
°
C,
V
CE
=5.0 V)
I
C
/
I
F
=f (
I
F
)
kHz
1
2
3
4
Figure 2. Switching operation
(with saturation)
I
F
1K
Ω
V
CC
=5 V
47
Ω
Figure 5. Current transfer ratio versus diode
current
(
T
A
=25
°
C,
V
CE
=5.0 V)
I
C
/
I
F
=f (
I
F
)
-1
(
I
F
=20 mA)
Turn-On Time
Rise Time
Turn-Off Time
Fall Time
-2 and -3
(
I
F
=10 mA)
4.2
3.0
23
14
-4
(
I
F
=5.0 mA)
6.0
4.6
25
15
1
2
3
4
t
ON
t
r
t
OFF
t
f
3.0
2.0
18
11
µs
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–73
CNY17F
March 17, 2000-13
Figure 6. Current transfer ratio versus
diode current
(T
A
=50°C)
V
CE
=5.0 V
Figure 9. Output characteristics
CNY17F-2, -3
(T
A
=25°C)
I
C
=f(V
CE
)
Figure 12. Saturation voltage current
and modulation CNY17F-1
V
CE
sat
=f (I
C
) (T
A
=25°C)
1
2
3
4
Figure 7. Current transfer ratio versus
diode current
(T
A
=75°C)
V
CE
=5.0 V
Figure 10. Forward voltage
V
F
=f(I
F
)
Figure 13. Saturation voltage versus
collector current and modulation depth
CNY17F-2
V
CE
sat
=f (I
C
) (T
A
=25°C)
1
2
3
4
Figure 8. Current transfer ratio versus
temperature
(I
F
=10 mA,
V
CE
=5.0 V)
I
C
/I
F
=f (T)
Figure 11. Collector emitter off-state
current
I
CEO
=f(V,T) (T
A
=75°C,
I
F
=0)
Figure 14. Saturation voltage versus
collector current and modulation depth
CNY17F-3
V
CE
sat
=f (I
C
) (T
A
=25°C)
4
3
2
1
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–74
CNY17F
March 17, 2000-13
Figure 15. Saturation voltage versus
collector current and modulation depth
CNY17F-4
V
CE
sat
=f (I
C
) (T
A
=25°C)
Figure 17. Permissible power dissipa-
tion transistor and diode
P
tot
=f(T
A
)
Figure 19. Transistor capacitance
C=f(V
O
)(T
A
=25°C, f=1.0 MHz)
Figure 16. Permissible pulse load
D=parameter,
T
A
=25°C, I
F
=f(t
p
)
Figure 18. Permissible forward current
diode
I
F
=f(T
A
)
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–75
CNY17F
March 17, 2000-13
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