SuperSOT
SOT23 NPN SILICON POWER
(SWITCHING) TRANSISTORS
ISSUE 3 - NOVEMBER 1995
FEATURES
FMMT617 FMMT618
FMMT619 FMMT624
FMMT625
*
*
*
*
*
*
625mW POWER DISSIPATION
I
C
CONT 3A
12A Peak Pulse Current
Excellent H
FE
Characteristics Up To 12A (pulsed)
Extremely Low Saturation Voltage E.g. 8mV Typ.
Extremely Low Equivalent On Resistance;
R
CE(sat)
C
B
E
DEVICE TYPE
FMMT617
FMMT618
FMMT619
FMMT624
FMMT625
COMPLEMENT
FMMT717
FMMT718
FMMT720
FMMT723
PARTMARKING
617
618
619
624
625
R
CE(sat)
50m
Ω
at 3A
50m
Ω
at 2A
75m
Ω
at 2A
-
-
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current**
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C*
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
FMMT FMMT FMMT FMMT FMMT
617
618
619
624
625
15
15
5
12
3
20
20
5
6
2.5
50
50
5
6
2
500
625
-55 to +150
125
125
5
3
1
150
150
5
3
1
UNIT
V
V
V
A
A
mA
mW
°C
Operating and Storage Temperature T
j
:T
stg
Range
* Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm
**Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for these devices
3 - 149
FMMT618
FMMT619
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
8
70
130
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
V
BE(sat)
V
BE(on)
h
FE
200
300
200
100
f
T
C
obo
t
(on)
t
(off)
100
0.89
0.79
400
450
360
180
140
23
170
400
30
FMMT618
MIN.
20
20
5
TYP.
100
27
8.3
100
100
100
15
150
200
1.0
1.0
200
300
200
100
100
50
50
5
FMMT619
TYP.
190
65
8.3
MAX.
MAX. MIN.
UNIT CONDITIONS.
V
V
V
nA
nA
nA
nA
nA
mV
mV
mV
mV
V
V
V
V
I
C
=100µA
I
C
=10mA*
I
E
=100µA
V
CB
=16V
V
CB
=40V
V
EB
=4V
V
CES
=16V
V
CES
=40V
I
C
=0.1A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
B
=50mA*
I
C
=2.5A, I
B
=50mA*
I
C
=2A, I
B
=50mA*
I
C
=2.5A, I
B
=50mA*
I
C
=2A, V
CE
=2V*
I
C
=2.5A, V
CE
=2V*
I
C
=10mA, V
CE
=2V*
I
C
=200mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=6A, V
CE
=2V*
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
V
CB
=10V, f=1MHz
V
CC
=10V, I
C
=1A
I
B1
=-I
B2
=10mA
100
100
100
10
125
150
0.87
0.80
400
450
400
225
40
165
12
170
750
20
20
200
220
1.0
1.0
Transition
Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
pF
ns
ns
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
3 - 152
FMMT617 FMMT624
FMMT618 FMMT625
FMMT619
SuperSOT Series
FMMT717 FMMT722
FMMT718 FMMT723
FMMT720
THERMAL CHARACTERISTICS AND DERATING INFORMATION
DERATING CURVE
MAXIMUM TRANSIENT THERMAL RESISTANCE
* Reference above figures, Devices were mounted on a 15mmx15mm ceramic substrate
3 - 158
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
