7A, 200V, 0.65ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | Renesas(瑞萨电子) |
包装说明 | FLANGE MOUNT, S-MSFM-P3 |
Reach Compliance Code | compliant |
ECCN代码 | EAR99 |
外壳连接 | ISOLATED |
配置 | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 200 V |
最大漏极电流 (ID) | 7 A |
最大漏源导通电阻 | 0.65 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-257AA |
JESD-30 代码 | S-MSFM-P3 |
JESD-609代码 | e0 |
元件数量 | 1 |
端子数量 | 3 |
工作模式 | ENHANCEMENT MODE |
最高工作温度 | 150 °C |
封装主体材料 | METAL |
封装形状 | SQUARE |
封装形式 | FLANGE MOUNT |
峰值回流温度(摄氏度) | NOT SPECIFIED |
极性/信道类型 | P-CHANNEL |
最大脉冲漏极电流 (IDM) | 21 A |
认证状态 | Not Qualified |
表面贴装 | NO |
端子面层 | TIN LEAD |
端子形式 | PIN/PEG |
端子位置 | SINGLE |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
FSS923A0D3 | FSS923A0R1 | FSS923A0R4 | FSS923A0R3 | FSS923A0D1 | |
---|---|---|---|---|---|
描述 | 7A, 200V, 0.65ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA | 7A, 200V, 0.65ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA | 7A, 200V, 0.65ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA | 7A, 200V, 0.65ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA | 7A, 200V, 0.65ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA |
厂商名称 | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) |
包装说明 | FLANGE MOUNT, S-MSFM-P3 | FLANGE MOUNT, S-MSFM-P3 | FLANGE MOUNT, S-MSFM-P3 | FLANGE MOUNT, S-MSFM-P3 | FLANGE MOUNT, S-MSFM-P3 |
Reach Compliance Code | compliant | compliant | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
外壳连接 | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 200 V | 200 V | 200 V | 200 V | 200 V |
最大漏极电流 (ID) | 7 A | 7 A | 7 A | 7 A | 7 A |
最大漏源导通电阻 | 0.65 Ω | 0.65 Ω | 0.65 Ω | 0.65 Ω | 0.65 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-257AA | TO-257AA | TO-257AA | TO-257AA | TO-257AA |
JESD-30 代码 | S-MSFM-P3 | S-MSFM-P3 | S-MSFM-P3 | S-MSFM-P3 | S-MSFM-P3 |
元件数量 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
封装主体材料 | METAL | METAL | METAL | METAL | METAL |
封装形状 | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE |
封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
极性/信道类型 | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL |
最大脉冲漏极电流 (IDM) | 21 A | 21 A | 21 A | 21 A | 21 A |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | NO | NO | NO |
端子形式 | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG |
端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
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