HN7G02FU
TOSHIBA Multi Chip Discrete Device
HN7G02FU
Power Management Switch Application, Inverter Circuit
Application, Driver Circuit Application and Interface
Circuit Application.
Q1 (transistor): RN2110 Equivalent
Q2 (MOS-FET): 2SK1830 Equivalent
Unit: mm
Q1 (Transistor) Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
−50
−50
−5
−100
Unit
V
V
V
mA
Q2 (MOS-FET) Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Gate-source voltage
DC drain current
Symbol
V
DS
V
GSS
I
D
Rating
20
10
50
Unit
V
V
mA
JEDEC
JEITA
TOSHIBA
Weight:
g (typ.)
―
―
―
Q1, Q2 Common Ratings
(Ta
=
25°C)
Characteristics
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
P
C
(Note 1)
T
j
T
stg
Rating
200
150
−55~150
Unit
mW
°C
°C
Marking
FT
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
Equivalent Circuit
temperature/current/voltage, etc.) are within the absolute maximum
6
5
4
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
Q2
Q1
reliability data (i.e. reliability test report and estimated failure rate,
etc).
1
2
3
(top view)
Note 1: Total rating
1
2007-11-01
HN7G02FU
Q1
(
Transistor
)
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input resistor
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
R1
Test Condition
V
CB
= −50
V, I
E
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −5
V, I
C
= −1
mA
I
C
=
5 mA, I
B
= −0.25
mA
⎯
Min
⎯
⎯
120
⎯
3.29
Typ.
⎯
⎯
⎯
−0.1
4.7
Max
−100
−100
400
−0.3
6.11
V
kΩ
Unit
nA
nA
Q2
(MOS-FET)
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Symbol
I
GSS
V
(BR) DSS
I
DSS
V
th
⎪Y
fs
⎪
R
DS (ON)
Test Condition
V
GS
=
10 V, V
DS
=
0
I
D
=
100
μA,
V
GS
=
0
V
DS
=
20 V, V
GS
=
0
V
DS
=
3 V, I
D
=
0.1 mA
V
DS
=
3 V, I
D
=
10 mA
I
D
=
10 mA V
GS
=
2.5 V
Min
⎯
20
⎯
0.5
20
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
20
Max
1
⎯
1
1.5
⎯
40
Unit
μA
V
μA
V
mS
Ω
2
2007-11-01
HN7G02FU
⎪Y
fs
⎪
– I
D
100
100
Common source
VDS
=
3 V
50
30
Ta
=
25°C
50
30
C – V
DS
Common source
VGS
=
0 V
f
=
1 MHz
Ta
=
25°C
Forward transfer admittance
⎪Y
fs
⎪
(mS)
(pF)
Capacitance C
10
5
3
Ciss
Coss
Crss
1
0.5
0.3
0.1
10
5
3
0.5
1
3
5
10
30
50
100
0.3
0.5
1
3
5
10
20
Drain current I
D
(mA)
Drain-source voltage
V
DS
(V)
V
DS (ON)
– I
D
3000
Common source
1000
VGS
=
2.5 V
1000 Ta
=
25°C
500
300
t – I
D
Drain-source ON resistance
V
DS (ON)
(mV)
Switching time t (ns)
toff
tf
100 ton
tr
ID
2.5 V
0
VIN
10
μs
50
Ω
VOUT
RL
VDD
=
3 V
10
3
D.U.
<
1%
=
VIN: tr, tf
<
5 ns
(Zout
=
50
Ω)
Common source
Ta
=
25°C
30
100
100
50
30
10
5
0.5
1
3
5
10
30
50
100
10
0.3
1
Drain current I
D
(mA)
Drain current I
D
(mA)
P
D
– Ta
200
(mW)
Power Dissipation P
D
150
100
50
0
0
20
40
60
80
100
120
140
160
Ambient temperature Ta (°C)
5
2007-11-01
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