DTA114EET1 SERIES
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC–75/SOT–416 package which is designed for low power surface
mount applications.
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Preferred Devices
PNP SILICON
BIAS RESISTOR
TRANSISTORS
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC–75/SOT–416 package can be soldered using
wave or reflow. The modified gull–winged leads absorb
thermal stress during soldering eliminating the possibility
of damage to the die.
•
Available in 8 mm, 7 inch/3000 Unit Tape & Reel
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
V
CBO
V
CEO
I
C
Value
50
50
100
Unit
Vdc
Vdc
COLLECTOR
3
1
BASE
2
EMITTER
3
2
mAdc
1
DEVICE MARKING AND RESISTOR VALUES
Device
DTA114EET1
DTA124EET1
DTA144EET1
DTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
Marking
6A
6B
6C
6D
6E
6F
6H
6J
6K
6L
6M
R1 (K)
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
R2 (K)
10
22
47
47
∞
∞
2.2
4.7
47
47
47
Shipping
3000/Tape & Reel
CASE 463
SOT–416/SC–75
STYLE 1
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2000
1
July, 2000 – Rev. 1
Publication Order Number:
DTA114EET1/D
DTA114EET1 SERIES
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation,
FR–4 Board
(1.)
@ T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
(1.)
Total Device Dissipation,
FR–4 Board
(2.)
@ T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
(2.)
Junction and Storage Temperature Range
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0
×
1.0 Inch Pad
Symbol
P
D
200
1.6
R
θJA
P
D
300
2.4
R
θJA
T
J
, T
stg
400
–55 to +150
mW
mW/°C
°C/W
°C
600
mW
mW/°C
°C/W
Max
Unit
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2
DTA114EET1 SERIES
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
Collector–Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
Emitter–Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
DTA114EET1
DTA124EET1
DTA144EET1
DTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
I
CBO
I
CEO
I
EBO
—
—
—
—
—
—
—
—
—
—
—
—
—
50
50
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
100
500
0.5
0.2
0.1
0.2
0.9
1.9
2.3
1.5
0.18
0.13
0.2
—
—
nAdc
nAdc
mAdc
Collector–Base Breakdown Voltage (I
C
= 10
µA,
I
E
= 0)
Collector–Emitter Breakdown Voltage
(3.)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CBO
V
(BR)CEO
Vdc
Vdc
ON CHARACTERISTICS
(3.)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
DTA114EET1
DTA124EET1
DTA144EET1
DTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
h
FE
35
60
80
80
160
160
8.0
15
80
80
80
—
60
100
140
140
250
250
15
27
140
130
140
—
—
—
—
—
—
—
—
—
—
—
—
0.25
Vdc
Collector–Emitter Saturation Voltage (I
C
= 10 mA, I
E
= 0.3 mA)
(I
C
= 10 mA, I
B
= 5 mA) DTA123EET1
(I
C
= 10 mA, I
B
= 1 mA) DTA114TET1/DTA143TET1/
DTA143ZET1/DTA124XET1/DTA143EET1
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kΩ)
DTA114EET1
DTA124EET1
DTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
DTA144EET1
V
CE(sat)
V
OL
—
—
—
—
—
—
—
—
—
—
—
V
OH
4.9
—
—
—
—
—
—
—
—
—
—
—
—
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
—
Vdc
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 kΩ)
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kΩ)
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kΩ)
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
3. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%
Vdc
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3
DTA114EET1 SERIES
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Input Resistor
DTA114EET1
DTA124EET1
DTA144EET1
DTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
DTA114EET1/DTA124EET1/DTA144EET1
DTA114YET1
DTA114TET1/DTA143TET1
DTA123EET1/DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
Symbol
R1
Min
7.0
15.4
32.9
7.0
7.0
3.3
1.5
3.3
3.3
15.4
1.54
0.8
0.17
—
0.8
0.055
0.38
0.038
Typ
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
1.0
0.21
—
1.0
0.1
0.47
0.047
Max
13
28.6
61.1
13
13
6.1
2.9
6.1
6.1
28.6
2.86
1.2
0.25
—
1.2
0.185
0.56
0.056
Unit
kΩ
Resistor Ratio
R
1
/R
2
250
PD , POWER DISSIPATION (MILLIWATTS)
200
150
100
50
R
θJA
= 600°C/W
0
– 50
0
50
100
T
A
, AMBIENT TEMPERATURE (°C)
150
Figure 1. Derating Curve
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
1.0
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
10
100
1000
0.1
Figure 2. Normalized Thermal Response
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4
DTA114EET1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — DTA114EET1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1
I
C
/I
B
= 10
hFE , DC CURRENT GAIN (NORMALIZED)
1000
V
CE
= 10 V
T
A
= –25°C
0.1
25°C
75°C
T
A
= 75°C
25°C
100
–25°C
0.01
0
20
I
C
, COLLECTOR CURRENT (mA)
40
50
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 3. V
CE(sat)
versus I
C
Figure 4. DC Current Gain
4
f = 1 MHz
l
E
= 0 V
T
A
= 25°C
100
75°C
IC, COLLECTOR CURRENT (mA)
10
25°C
T
A
= –25°C
Cob , CAPACITANCE (pF)
3
1
2
0.1
1
0.01
0.001
0
1
2
V
O
= 5 V
3
4
5
6
7
V
in
, INPUT VOLTAGE (VOLTS)
8
9
10
0
0
10
20
30
40
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 5. Output Capacitance
Figure 6. Output Current versus Input Voltage
100
V
O
= 0.2 V
V in , INPUT VOLTAGE (VOLTS)
10
T
A
= –25°C
25°C
75°C
1
0.1
0
10
20
30
I
C
, COLLECTOR CURRENT (mA)
40
50
Figure 7. Input Voltage versus Output Current
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