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PROFET® BTS611L1
Smart Two Channel Highside Power Switch
•
Overload protection
•
Current limitation
•
Short circuit protection
•
Thermal shutdown
•
Overvoltage protection (including load dump)
•
Fast demagnetization of inductive loads
•
Reverse battery protection
1)
•
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
•
Open drain diagnostic output
•
Open load detection in ON-state
•
CMOS compatible input
•
Loss of ground and loss of
V
bb
protection
•
Electrostatic discharge
(ESD) protection
Features
Product Summary
Overvoltage protection
Operating voltage
V
bb(AZ)
V
bb(on)
43
5.0 ... 34
both
V
V
channels:
On-state resistance
R
ON
Load current (ISO)
I
L(ISO)
Current limitation
I
L(SCr)
each
parallel
200
100 mΩ
2.3
4.4
A
4
4
A
TO-220AB/7
Application
7
1
7
• µC
compatible power switch with diagnostic
1
feedback for 12 V and 24 V DC grounded loads
Standard
•
All types of resistive, inductive and capacitve
loads
•
Replaces electromechanical relays, fuses and discrete circuits
7
Straight leads
SMD
1
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
Voltage
source
V
Logic
Overvoltage
protection
Current
limit 1
Gate 1
protection
+ V bb
4
Voltage
sensor
Level shifter
Rectifier 1
Charge
pump 1
Charge
pump 2
Limit for
unclamped
ind. loads 1
Open load
Short to Vbb
detection 1
Current
limit 2
Gate 2
protection
OUT1
3
6
5
IN1
IN2
Temperature
sensor 1
1
ESD
ST
Logic
Level shifter
Rectifier 2
Limit for
unclamped
ind. loads 2
Open load
Short to Vbb
detection 2
OUT2
Temperature
sensor 2
R
O1
GND
R
O2
7
Load
PROFET
2
GND
Signal GND
Load GND
1
)
With external current limit (e.g. resistor R
GND
=150
Ω)
in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Semiconductor Group
1 of 15
2003-Oct-01
PROFET® BTS611L1
Pin
1
2
3
4
5
6
7
Symbol
OUT1 (Load, L)
GND
IN1
Vbb
ST
IN2
OUT2 (Load, L)
Function
Output 1, protected high-side power output of channel 1
Logic ground
Input 1, activates channel 1 in case of logical high signal
Positive power supply voltage,
the tab is shorted to this pin
Diagnostic feedback: open drain, low on failure
Input 2, activates channel 2 in case of logical high signal
Output 2, protected high-side power output of channel 2
Maximum Ratings
at
T
j
= 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 4)
Supply voltage for full short circuit protection
T
j Start
=-40 ...+150°C
Load dump protection
2
)
V
LoadDump
=
U
A
+
V
s
,
U
A
= 13.5 V
R
I
3
)
= 2
Ω,
R
L
= 5.3
Ω,
t
d
= 200 ms, IN= low or high
Load current (Short circuit current, see page 5)
Operating temperature range
Storage temperature range
Power dissipation (DC), T
C
≤
25 °C
Inductive load switch-off energy dissipation, single pulse
V
bb
= 12V,
T
j,start
= 150°C,
T
C
= 150°C const.
one channel,
I
L
= 2.3 A, Z
L
= 89 mH, 0
Ω:
both channels parallel,
I
L
= 4.4 A, Z
L
= 47 mH, 0
Ω:
see diagrams on page 9
Symbol
V
bb
V
bb
V
Load dump4
)
I
L
T
j
T
stg
P
tot
E
AS
Values
43
34
60
self-limited
-40 ...+150
-55 ...+150
36
290
580
1.0
2.0
-10 ... +16
±2.0
±5.0
Unit
V
V
V
A
°C
W
mJ
Electrostatic discharge capability (ESD)
(Human Body Model)
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 7
IN:
V
ESD
all other pins:
V
IN
I
IN
I
ST
kV
V
mA
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
2
)
3)
4)
Supply voltages higher than V
bb(AZ)
require an external current limit for the GND and status pins, e.g. with a
150
Ω
resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the
protection of the input is integrated.
R
I
= internal resistance of the load dump test pulse generator
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Semiconductor Group
2
2003-Oct-01
PROFET® BTS611L1
Thermal Characteristics
Parameter and Conditions
Thermal resistance
Symbol
min
--
--
--
Values
typ
max
--
3.5
--
7.0
--
75
37
Unit
K/W
chip - case, both channels:
R
thJC
each channel:
junction - ambient (free air):
R
thJA
SMD version, device on PCB
5)
:
Electrical Characteristics
Parameter and Conditions,
each channel
at
T
j
= 25 °C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
On-state resistance (pin 4 to 1 or 7)
I
L
= 1.8 A
T
j
=25 °C:
R
ON
--
1.8
3.5
--
160
320
2.3
4.4
--
200
400
--
--
10
A
mA
µs
mΩ
each channel
T
j
=150 °C:
Nominal load current, ISO Norm (pin 4 to 1 or 7)
V
ON
= 0.5 V,
T
C
= 85 °C
each channel:
I
L(ISO)
both channels parallel:
Output current (pin
1
or 7) while GND disconnected
or GND pulled up,
V
bb
=30 V,
V
IN
= 0, see diagram
page 8
Turn-on time
IN
to 90%
V
OUT
:
Turn-off time
IN
to 10%
V
OUT
:
R
L
= 12
Ω
,
T
j
=-40...+150°C
Slew rate on
10 to 30%
V
OUT
,
R
L
= 12
Ω
,
T
j
=-40...+150°C
Slew rate off
70 to 40%
V
OUT
,
R
L
= 12
Ω
,
T
j
=-40...+150°C
I
L(GNDhigh)
t
on
t
off
dV /dt
on
-dV/dt
off
80
80
0.1
0.1
200
200
--
--
400
400
1
1
V/µs
V/µs
5
)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
Semiconductor Group
3
2003-Oct-01
PROFET® BTS611L1
Parameter and Conditions,
each channel
at
T
j
= 25 °C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Operating Parameters
Operating voltage
6
)
Undervoltage shutdown
Undervoltage restart
T
j
=-40...+150°C:
T
j
=-40...+150°C:
T
j
=-40...+25°C:
T
j
=+150°C:
Undervoltage restart of charge pump
see diagram page 13
Undervoltage hysteresis
∆V
bb(under)
=
V
bb(u rst)
-
V
bb(under)
Overvoltage shutdown
T
j
=-40...+150°C:
Overvoltage restart
T
j
=-40...+150°C:
Overvoltage hysteresis
T
j
=-40...+150°C:
Overvoltage protection
7
)
T
j
=-40...+150°C:
I
bb
=40 mA
Standby current (pin 4)
V
IN
=0
T
j
=-40...+25°C
:
T
j
= 150°C:
Leakage output current (included in
I
bb(off)
)
V
IN
=0
Operating current (Pin 2)
8)
,
V
IN
=5 V
both channels on,
T
j
=-40...+150°C
Operating current (Pin 2)
8)
one channel on,
T
j
=-40...+150°C:
V
bb(on)
V
bb(under)
V
bb(u rst)
V
bb(ucp)
∆V
bb(under)
V
bb(over)
V
bb(o rst)
∆V
bb(over)
V
bb(AZ)
5.0
3.5
--
--
--
34
33
--
42
--
--
--
5.6
0.2
--
--
0.5
47
34
5.0
5.0
7.0
7.0
--
43
--
--
--
V
V
V
V
V
V
V
V
V
I
bb(off)
I
L(off)
I
GND
I
GND
--
--
--
--
--
14
17
--
4
2
30
35
12
6
3
µA
µA
mA
mA
6)
7)
8
)
At supply voltage increase up to
V
bb
= 5.6 V typ without charge pump,
V
OUT
≈V
bb
- 2 V
See also
V
ON(CL)
in table of protection functions and circuit diagram page 8.
Add
I
ST
, if
I
ST
> 0, add
I
IN
, if
V
IN
>5.5 V
Semiconductor Group
4
2003-Oct-01
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