PROFET® BTS436L2
Smart High-Side Power Switch
One Channel: 38mΩ
Status Feedback
Product Summary
On-state Resistance
Operating Voltage
Nominal load current
Current limitation
R
ON
V
bb(on)
I
L(NOM)
I
L(SCr)
38mΩ
4.75...41V
9.8A
40A
Package
TO 220-5-11
TO-263-5-2
TO-220-5-12
Standard
SMD
Straight
General Description
•
•
N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and
®
diagnostic feedback, monolithically integrated in Smart SIPMOS technology.
Fully protected by embedded protection functions
Applications
•
•
•
•
µC compatible high-side power switch with diagnostic feedback for 5V, 12V and 24V grounded loads
All types of resistive, inductive and capacitve loads
Most suitable for loads with high inrush currents, so as lamps
Replaces electromechanical relays, fuses and discrete circuits
Basic Functions
•
•
•
•
•
•
Very low standby current
CMOS compatible input
Fast demagnetization of inductive loads
Stable behaviour at undervoltage
Wide operating voltage range
Logic ground independent from load ground
Protection Functions
•
•
•
•
•
•
•
•
Short circuit protection
Overload protection
Current limitation
Thermal shutdown
Overvoltage protection (including load dump) with external
resistor
Reverse battery protection with external resistor
Loss of ground and loss of V
bb
protection
Electrostatic discharge protection (ESD)
Block Diagram
Vbb
IN
ST
Logic
with
protection
functions
OUT
Diagnostic Function
•
•
•
Diagnostic feedback with open drain output
Open load detection in ON-state
Feedback of thermal shutdown in ON-state
PROFET
GND
Load
Semiconductor Group
Page 1 of 12
1999-Feb-26
BTS436L2
Functional diagram
overvoltage
protection
internal
voltage supply
logic
gate
control
+
charge
pump
current limit
VBB
clamp for
inductive load
OUT
IN
ESD
ST
GND
temperature
sensor
LOAD
Open load
detection
PROFET
Pin Definitions and Functions
Pin
1
2
3
4
5
Tab
Symbol
GND
IN
Vbb
ST
OUT
Vbb
Function
Logic ground
Input,
activates the power switch in
case of logical high signal
Positive power supply voltage
The tab is shorted to pin 3
Diagnostic feedback,
low on failure
Output
to the load
Positive power supply voltage
The tab is shorted to pin 3
Pin configuration
(top view)
Tab = V
BB
1
2
(3)
4
5
GND IN
ST OUT
Semiconductor Group
Page 2
1999-Feb-26
BTS436L2
Maximum Ratings
at
T
j
= 25 °C unless otherwise specified
Parameter
Supply voltage
(overvoltage protection see page 4)
Supply voltage for full short circuit protection
T
j Start
=-40 ...+150°C
Load dump protection
1)
V
LoadDump
= V
A
+
V
s
, V
A
= 13.5 V
R
I
2)
= 2
Ω,
R
L
= 4.0
Ω,
t
d
= 400 ms, IN= low or high
Load current
(Current limit, see page 5)
Operating temperature range
Storage temperature range
Power dissipation (DC), T
C
≤
25 °C
Maximal switchable inductance, single pulse
Vbb = 12V,
Tj,start
= 150°C,
T
C = 150°C const.
4
(See diagram on page 8)
I
L(ISO) = 9.8 A, RL = 0
Ω,
E
)
AS
=0.33J:
Symbol
V
bb
V
bb
Values
43
24
60
self-limited
-40 ...+150
-55 ...+150
75
5.0
1.0
4.0
8.0
-10 ... +16
±2.0
±5.0
Unit
V
V
V
A
°C
W
mH
kV
V
Load dump3
I
L
T
j
T
stg
P
tot
Z
L
V
ESD
Electrostatic discharge capability (ESD)
IN:
(Human Body Model)
ST:
out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and
ESD assn. std. S5.1-1993; R=1.5kΩ; C=100pF
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 7
V
IN
I
IN
I
ST
V
mA
Thermal Characteristics
Parameter and Conditions
Thermal resistance
Symbol
min
--
--
--
chip - case:
R
thJC
junction - ambient (free air):
R
thJA
device on pcb
5
):
Values
typ
max
-- 1.75
--
75
33
--
Unit
K/W
1
)
2
)
3
)
4
)
5
)
Supply voltages higher than V
bb(AZ)
require an external current limit for the GND and status pins (a 150Ω
resistor for the GND connection is recommended).
R
I
= internal resistance of the load dump test pulse generator
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
E
AS
is the maximum inductive switch-off energy
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
Semiconductor Group
Page 3
1999-Feb-26
BTS436L2
Electrical Characteristics
Parameter and Conditions
at
T
j
=-40...+150°C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
I
L = 2 A; V
BB
≥
7V
see diagram, page 9
T
j
=25 °C:
R
ON
T
j
=150 °C:
I
L(ISO)
I
L(GNDhigh)
--
35
64
9.8
--
100
120
--
--
38
72
--
2
200
250
1
1
mΩ
Nominal load current, (pin 3 to 5)
ISO 10483-1, 6.7:V
ON
=0.5V,
T
C
=85°C
8.8
--
50
50
0.1
0.1
A
mA
µs
Output current (pin
5
) while GND disconnected or
GND pulled up,
V
bb
=30 V,
V
IN
= 0,
see diagram page 7 (not tested specified by design)
Turn-on time
IN
Turn-off time
IN
R
L
= 12
Ω
,
Slew rate on
10 to 30%
V
OUT
,
R
L
= 12
Ω
,
Slew rate off
70 to 40%
V
OUT
,
R
L
= 12
Ω
,
Operating Parameters
Operating voltage
to 90%
V
OUT
:
t
on
to 10%
V
OUT
:
t
off
dV /dt
on
-dV/dt
off
V/µs
V/µs
T
j
=-40
T
j
=+25...+150°C:
6
)
Overvoltage protection
T
j
=-40°C:
I
bb
=40 mA
T
j
=25...+150°C:
7)
Standby current (pin 3)
T
j
=-40...+25°C
:
V
IN
=0;
see diagram on page 9
T
j
= 150°C:
Off-State output current (included in
I
bb(off)
)
V
IN
=0
Operating current
8
)
,
V
IN
=5 V
V
bb(on)
V
bb(AZ)
I
bb(off)
I
L(off)
I
GND
4.75
41
43
--
--
--
--
--
--
--
47
5
--
1
0.8
41
43
--
52
8
25
10
1.4
V
V
µA
µA
mA
6
)
7
)
8
)
Supply voltages higher than V
bb(AZ)
require an external current limit for the GND and status pins (a 150Ω
resistor for the GND connection is recommended. See also
V
ON(CL)
in table of protection functions and
circuit diagram page 7.
Measured with load
Add
I
ST
, if
I
ST
> 0, add
I
IN
, if
V
IN
>5.5 V
Semiconductor Group
Page 4
1999-Feb-26
BTS436L2
Parameter and Conditions
at
T
j
=-40...+150°C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Protection Functions
Current limit (pin 3 to 5)
(see timing diagrams on page 11)
I
L(lim)
46
39
30
--
--
41
43
150
--
--
--
58
51
38
40
1.9
68
58
46
--
--
A
T
j
=-40°C:
T
j
=25°C:
T
j
=+150°C:
Repetitive short circuit shutdown current limit
I
L(SCr)
T
j
=
T
jt
(see timing diagrams, page 11)
Thermal shutdown time
9)
T
j,start
= 25°C:
t
off(SC)
(see timing diagrams on page 11)
A
ms
Output clamp (inductive load switch off)
at
V
OUT
=
V
bb
-
V
ON(CL)
I
L
= 40 mA:
Thermal overload trip temperature
Thermal hysteresis
10)
Reverse battery (pin 3 to 1)
11 )
Reverse battery voltage drop
(V
out
> V
bb
)
I
L
= -2 A
T
j
=150 °C:
Diagnostic Characteristics
Open load detection current
(on-condition)
V
ON(CL)
T
jt
∆
T
jt
-
V
bb
-V
ON(rev)
47
--
10
--
600
52
--
--
32
--
V
°C
K
V
mV
I
L (OL)
10
--
900
mA
Input and Status Feedback
12
)
Input resistance
see circuit page 7
Input turn-on threshold voltage
Input turn-off threshold voltage
Input threshold hysteresis
Off state input current (pin 2),
V
IN
= 0.4 V
On state input current (pin 2),
V
IN
= 5 V
Delay time for status with open load
after switch off
(see timing diagrams on page 11)
R
I
V
IN(T+)
V
IN(T-)
∆
V
IN(T)
I
IN(off)
I
IN(on)
t
d(ST OL4)
2.5
1.7
1.5
--
1
20
100
3.5
--
--
0.5
--
50
520
6
3.2
--
--
50
90
900
kΩ
V
V
V
µA
µA
µs
Status output (open drain)
Zener limit voltage
ST low voltage
I
ST
= +1.6 mA:
V
ST(high)
I
ST
= +1.6 mA:
V
ST(low)
5.4
--
6.1
--
--
0.4
V
9
)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
10
)
Requires 150
Ω
resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 3 and circuit page 7).
11
)
Specified by design, not tested
12
)
If a ground resistor R
GND
is used, add the voltage drop across this resistor.
Semiconductor Group
Page 5
1999-Feb-26
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