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CN453

产品描述Small Signal Bipolar Transistor, 1A I(C), 1-Element, NPN, Silicon, TO-92, PLASTIC, TO-92, 3 PIN
产品类别分立半导体    晶体管   
文件大小125KB,共4页
制造商CDIL[Continental Device India Pvt. Ltd.]
标准
下载文档 详细参数 全文预览

CN453概述

Small Signal Bipolar Transistor, 1A I(C), 1-Element, NPN, Silicon, TO-92, PLASTIC, TO-92, 3 PIN

CN453规格参数

参数名称属性值
是否Rohs认证符合
厂商名称CDIL[Continental Device India Pvt. Ltd.]
零件包装代码TO-92
包装说明CYLINDRICAL, O-PBCY-T3
针数3
Reach Compliance Codecompliant
最大集电极电流 (IC)1 A
配置SINGLE
最小直流电流增益 (hFE)10
JEDEC-95代码TO-92
JESD-30 代码O-PBCY-T3
元件数量1
端子数量3
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式CYLINDRICAL
极性/信道类型NPN
最大功率耗散 (Abs)0.75 W
认证状态Not Qualified
表面贴装NO
端子形式THROUGH-HOLE
端子位置BOTTOM
晶体管元件材料SILICON
标称过渡频率 (fT)150 MHz

文档预览

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Continental Device India Limited
An ISO/TS 16949 and ISO 9001 Certified Manufacturer
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CN452 / CN453
TO-92
Plastic Package
E
BC
General Purpose Transistors designed for Small and Medium Signal Amplification
from D.C to Radio Frequencies
Complementary CP552 and CP553
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Peak Pulse Current
Collector Current Continuous
Base Current
Power Dissipation @ T
a
=25ºC
Power Dissipation @ T
a
=25ºC
Power Dissipation @ T
c
=25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
D
*P
D
P
D
T
j
, T
stg
CN452
100
80
5.0
2.0
1.0
200
0.8
1.0
2.0
- 65 to +150
CN453
120
100
UNITS
V
V
V
A
A
mA
W
W
W
ºC
*Transistors mounted on printed circuit board. Lead Length 4mm, mounting pad for collector lead min
10mm x 10 mm, copper
ELECTRICAL CHARACTERISTICS (T
a
=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
I
CBO
V
CB
=80V, I
E
= 0
Collector Cut Off Current
V
CB
=100V, I
E
= 0
Emitter Cut Off Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Collector Emitter Voltage
DC Current Gain
DYNAMIC CHARACTERISTICS
DESCRIPTION
Transition Frequency
Output Capacitance
CN452_453Rev_2 211204E
CN452
<100
<100
<0.7
<1.3
>80
40 - 150
>10
CN453
<100
<100
<0.7
<1.3
>100
40 - 200
>10
I
EBO
V
CE (sat)
V
BE (sat)
V
CEO
*h
FE
V
EB
=4V, I
C
= 0
I
C
=150mA, I
B
=15mA
I
C
=150mA, I
B
=15mA
I
C
=1mA, I
B
=0
V
CE
=10V, I
C
=150mA
V
CE
=10V, I
C
=1A
TEST CONDITION
V
CE
=10V, I
C
=50mA,
f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
UNITS
nA
nA
nA
V
V
V
SYMBOL
f
T
C
obo
CN452
>100
<15
CN453
>100
<15
UNITS
MHz
pF
*Pulse Condition: Pulse Width = 300µs, Duty Cycle < 2%.
µ
Continental Device India Limited
Data Sheet
Page 1 of 4

 
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