Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
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the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
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NXP Semiconductors
Product data sheet
Voltage regulator diodes
FEATURES
•
Total power dissipation:
max. 1 500 mW
•
Tolerance series: approx.
±5%
•
Working voltage range:
nom. 2.4 to 75 V (E24 range)
•
Non-repetitive peak reverse power
dissipation: max. 40 W.
APPLICATIONS
•
General regulation functions.
1
handbook, halfpage
BZV90 series
PINNING
PIN
1
2, 4
3
anode
cathode
anode
DESCRIPTION
4
3
DESCRIPTION
Medium-power voltage regulator
diodes in SOT223 plastic SMD
packages.
The diodes are available in the
normalized E24 approx.
±5%
tolerance range. The series consists
of 37 types with nominal working
voltages from 2.4 to 75 V
(BZV90-C2V4 to C75).
1
Top view
2, 4
2
3
MAM242
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
I
F
I
ZSM
P
tot
P
ZSM
T
stg
T
j
Note
1. Device mounted on an FR4 double-sided copper-clad printed circuit-board; copper area = 2 cm
2
.
ELECTRICAL CHARACTERISTICS
Total series
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
CONDITIONS
I
F
= 50 mA; see Fig.3
MIN.
−
MAX.
1.0
UNIT
V
PARAMETER
continuous forward current
non-repetitive peak reverse current
total power dissipation
non-repetitive peak reverse power
dissipation
storage temperature
junction temperature
t
p
= 100
μs;
square wave;
T
j
= 25
°C
prior to surge
T
amb
= 25
°C;
note 1
t
p
= 100
μs;
square wave;
T
j
= 25
°C
prior to surge; see Fig.2
CONDITIONS
−
see Table
“Per type”
−
−
−65
−
1 500
40
+150
150
mW
W
°C
°C
MIN.
MAX.
400
UNIT
mA
1999 May 17
2
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