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EM01Z(Z)

产品描述Rectifier Diode, 1 Element, 1A, 200V V(RRM),
产品类别分立半导体    二极管   
文件大小55KB,共2页
制造商Galaxy Microelectronics
标准
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EM01Z(Z)概述

Rectifier Diode, 1 Element, 1A, 200V V(RRM),

EM01Z(Z)规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Galaxy Microelectronics
Reach Compliance Codeunknown
配置SINGLE
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.97 V
最大非重复峰值正向电流45 A
元件数量1
最高工作温度150 °C
最大输出电流1 A
最大重复峰值反向电压200 V
表面贴装NO

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BL
FEATURES
GALAXY ELECTRICAL
EM01Z(Z) - - - EM01A(Z)
VOLTAGE RANGE: 200 --- 600 V
CURRENT: 1.0 A
PLASTIC SILICON RECTIFIER
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
DO - 41
MECHANICAL DATA
Case:JEDEC DO--41,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012ounces,0.34 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
EM01Z
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
EM01
400
280
400
1.0
EM01A
600
420
600
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
200
140
200
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
45.0
A
Maximum instantaneous forw ard voltage
@ 1.0 A
Maximum reverse current
at rated DC blocking voltage
Typical junction capacitance
Typical thermal resistance
@T
A
=25
@T
A
=100
(Note1)
(Note2)
V
F
I
R
C
J
R
θ
JA
T
J
T
STG
0.97
5.0
50.0
15
50
-55----+150
-55----+150
V
A
pF
/W
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
2. Thermal resistance f rom junction to ambient.
www.galaxycn.com
Document Number 0260018
BL
GALAXY ELECTRICAL
1.

EM01Z(Z)相似产品对比

EM01Z(Z) EM01A(Z) EM01(Z)
描述 Rectifier Diode, 1 Element, 1A, 200V V(RRM), Rectifier Diode, 1 Element, 1A, 600V V(RRM), Rectifier Diode, 1 Element, 1A, 400V V(RRM),
是否Rohs认证 符合 符合 符合
厂商名称 Galaxy Microelectronics Galaxy Microelectronics Galaxy Microelectronics
Reach Compliance Code unknown unknown unknown
配置 SINGLE SINGLE SINGLE
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 0.97 V 0.97 V 0.97 V
最大非重复峰值正向电流 45 A 45 A 45 A
元件数量 1 1 1
最高工作温度 150 °C 150 °C 150 °C
最大输出电流 1 A 1 A 1 A
最大重复峰值反向电压 200 V 600 V 400 V
表面贴装 NO NO NO

 
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