Freescale Semiconductor
Technical Data
Document Number: MRF6522 - 70
Rev. 8, 5/2006
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for GSM 900 frequency band, the high gain and broadband
performance of this device make it ideal for large - signal, common source
amplifier applications in 26 volt base station equipment.
•
Specified Performance @ Full GSM Band, 921 - 960 MHz, 26 Volts
Output Power, P1dB — 80 Watts (Typ)
Power Gain @ P1dB — 16 dB (Typ)
Efficiency @ P1dB — 58% (Typ)
•
Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 50 Watts CW Output
Power
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
MRF6522-70R3
921 - 960 MHz, 70 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 465D - 05, STYLE 1
NI - 600
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
I
D
P
D
T
stg
T
C
T
J
Value
- 0.5, +65
±
20
7
159
0.9
- 65 to +150
150
200
Unit
Vdc
Vdc
Adc
W
W/°C
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
1.1
Unit
°C/W
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF6522 - 70R3
4-1
Freescale Semiconductor
RF Product Device Data
Table 3. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Drain - Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 20
μAdc)
Zero Gate Voltage Drain Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 20 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 300
μAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 400 mAdc)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
Dynamic Characteristics
Input Capacitance
(1)
(V
DS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
Output Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
Functional Tests
(In Freescale Test Fixture)
Output Power
(2)
(V
DD
= 26 Vdc, I
DQ
= 400 mA, f = Full GSM Band 921 - 960 MHz)
Common - Source Amplifier Power Gain @ P1dB (Min) (2)
(V
DD
= 26 Vdc, I
DQ
= 400 mA, f = Full GSM Band 921 - 960 MHz)
Drain Efficiency @ P
out
= 50 W
(V
DD
= 26 Vdc, I
DQ
= 400 mA, f = Full GSM Band 921 - 960 MHz)
Drain Efficiency @ P1dB
(2)
(V
DD
= 26 Vdc, I
DQ
= 400 mA, f = Full GSM Band 921 - 960 MHz)
Input Return Loss @ P
out
= 50 W
(V
DD
= 26 Vdc, I
DQ
= 400 mA,
f = 921 MHz and 960 MHz
f = 940 MHz)
P1dB
G
ps
η
1
η
2
IRL
—
—
—
—
- 10
- 15
73
14
47
—
80
16
51
58
—
18
—
—
W
dB
%
%
dB
C
iss
C
oss
C
rss
—
41
2.4
130
47
3
—
52
3.4
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2
3
—
2
3
4
0.15
3
4
5
0.6
—
Vdc
Vdc
Vdc
S
V
(BR)DSS
I
DSS
I
GSS
65
—
—
—
—
—
—
10
1
Vdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
1. Value excludes the input matching.
2. To meet application requirements, Freescale test fixtures have been designed to cover full GSM 900 band ensuring batch - to - batch
consistency.
MRF6522 - 70R3
4-2
Freescale Semiconductor
RF Product Device Data
Vreg
VBIAS
T1
Gnd
Vin
Vout
R1
R2
C1
R6
VSUPPLY
R3
T2
R4
C7
R5
C6
RF Input
C5
C8
C3
C12
+
C2
C4
C10
C14
C13
RF Output
Q1
C9
C11
C1
C2
C3
C4, C6, C14
C5
C7, C8, C13
C9, C10
C11, C12
R1
R2
1.0
μF
Chip Capacitor (0805)
10
μF,
35 Vdc Tantalum Capacitor
100 nF Chip Capacitor
22 pF Chip Capacitors, ACCU - P (0805)
2.7 pF Chip Capacitor, ACCU - P (0805)
4.7 pF Chip Capacitors, ACCU - P (0805)
8.2 pF Chip Capacitors, ACCU - P (0805)
2.2 pF Chip Capacitors, ACCU - P (0805)
10
Ω
Chip Resistor (0805)
1.0 kΩ Chip Resistor (0805)
R3
R4
R5
R6
T1
T2
1.2 kΩ Chip Resistor (0805)
2.2 kΩ Chip Resistor (0805)
220
Ω
Chip Resistor (0805)
5.0 kΩ SMD Potentiometer
LP2951 Micro - 8
BC847 SOT - 23
SUBSTRATE GI180 0.8 mm
Figure 1. MRF6522 - 70 Test Circuit Schematic
VBIAS
Ground
VSUPPLY
C1
R2
R3
R4
R1 T1
C2
R6
C3
C4
R5
C7
C6
C10
C12
C13
C9
C11
STRAP
MRF6522 - 70
C14
T2
C5
C8
Q1
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF6522 - 70 Test Circuit Component Layout
MRF6522 - 70R3
Freescale Semiconductor
RF Product Device Data
4-3
TYPICAL CHARACTERISTICS
17.5
I
DQ
= 600 mA
17.0
G ps , POWER GAIN (dB)
G ps , POWER GAIN (dB)
500 mA
200 mA
16.0
V
DS
= 26 Vdc
f = 921 MHz
15.5
15.0
400 mA
300 mA
18.0
17.8
17.6
17.4
17.2
17.0
16.8
16.6
16.4
16.2
10
P
out
, OUTPUT POWER (WATTS)
100
16.0
10
P
out
, OUTPUT POWER (WATTS)
100
V
DS
= 26 Vdc
f = 960 MHz
300 mA
200 mA
I
DQ
= 600 mA
500 mA
400 mA
16.5
Figure 3. Power Gain versus Output Power
Figure 4. Power Gain versus Output Power
105
115
Pout , OUTPUT POWER (WATTS)
105
3.0 W
95
85
75
65
55
45
18
19
20
I
DQ
= 400 mA
f = 921 MHz
21
22
23
24
25
26
V
DD
, SUPPLY VOLTAGE (VOLTS)
27
28
2.0 W
4.0 W
Pout , OUTPUT POWER (WATTS)
P
in
= 5.0 W
95
P
in
= 5.0 W
85
3.0 W
75
65
55
45
35
18
19
20
I
DQ
= 400 mA
f = 960 MHz
21
22
23
24
25
26
V
DD
, SUPPLY VOLTAGE (VOLTS)
27
28
2.0 W
4.0 W
Figure 5. Output Power versus Supply Voltage
Figure 6. Output Power versus Supply Voltage
80
Pout , OUTPUT POWER (WATTS)
70
60
50
40
30
P
out
20
10
0
0
0.5
V
DS
= 26 Vdc
I
DQ
= 400 mA
f = 921 MHz
1.0
1.5
P
in
, INPUT POWER (WATTS)
2.0
h
80
70
60
50
40
30
20
10
0
h
, EFFICIENCY (%)
Figure 7. Efficiency and Output Power
versus Input Power
MRF6522 - 70R3
4-4
Freescale Semiconductor
RF Product Device Data
TYPICAL CHARACTERISTICS
80
Pout , OUTPUT POWER (WATTS)
70
60
50
40
30
20
10
0
0
0.5
V
DS
= 26 Vdc
I
DQ
= 400 mA
f = 960 MHz
1.0
1.5
P
in
, INPUT POWER (WATTS)
2.0
h
P
out
80
70
60
50
40
30
20
10
0
h
, EFFICIENCY (%)
h,
EFFICIENCY (%)
h,
EFFICIENCY (%)
Figure 8. Efficiency and Output Power
versus Input Power
20
19
G ps , POWER GAIN (dB)
18
17
16
15
14
13
0.02 0.03 0.06 0.12
0.21 0.38
0.70 1.26
2.26 3.96
P
in
, INPUT POWER (WATTS)
h
V
DS
= 26 Vdc
f = 921 MHz
G
ps
70
60
50
40
30
20
10
0
Figure 9. Power Gain and Efficiency
versus Input Power
20
19
G ps , POWER GAIN (dB)
18
17
16
15
14
13
0.02 0.03 0.05 0.10
0.18 0.34
0.62 1.15
2.14 3.70
P
in
, INPUT POWER (WATTS)
h
V
DS
= 26 Vdc
f = 960 MHz
G
ps
70
60
50
40
30
20
10
0
Figure 10. Power Gain and Efficiency
versus Input Power
MRF6522 - 70R3
Freescale Semiconductor
RF Product Device Data
4-5
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