D ts e t
aa h e
R c e t r lc r nc
o h se Ee to is
Ma u a t r dCo o e t
n fc u e
mp n n s
R c e tr b a d d c mp n ns ae
o h se rn e
o oet r
ma ua trd u ig ete dewaes
n fcue sn i r i/ fr
h
p rh s d f m te oiia s p l r
uc a e r
o h r n l u pi s
g
e
o R c e tr waes rce td f m
r o h se
fr e rae r
o
te oiia I. Al rce t n ae
h
r nl P
g
l e rai s r
o
d n wi tea p o a o teOC
o e t h p rv l f h
h
M.
P r aetse u igoiia fcoy
at r e td sn r n la tr
s
g
ts p o rmso R c e tr e eo e
e t rga
r o h se d v lp d
ts s lt n t g aa te p o u t
e t oui s o u rne
o
rd c
me t o e c e teOC d t s e t
es r x e d h
M aa h e.
Qu l yOv riw
ai
t
e ve
• IO- 0 1
S 90
•A 92 cr ct n
S 1 0 et ai
i
o
• Qu l e Ma ua trr Ls (
ai d
n fcues it QML MI- R -
) LP F
385
53
•C a sQ Mitr
ls
lay
i
•C a sVS a eL v l
ls
p c ee
• Qu l e S p l r Ls o D sr uos( L )
ai d u pi s it f it b tr QS D
e
i
•R c e trsacic l u pir oD A a d
o h se i
r ia s p l t L n
t
e
me t aln u t a dD A sa d r s
es lid sr n L tn ad .
y
R c e tr lcrnc , L i c mmi e t
o h se Ee t is L C s o
o
tdo
t
s p ligp o u t ta s t f c so r x e t-
u pyn rd cs h t ai y u tme e p ca
s
t n fr u lya daee u loto eoiial
i s o q ai n r q a t h s r n l
o
t
g
y
s p l db id sr ma ua trr.
u pi
e yn ut
y n fcues
T eoiia ma ua trr d ts e t c o a yn ti d c me t e e t tep r r n e
h r n l n fcue’ aa h e a c mp n ig hs o u n r cs h ef ma c
g
s
o
a ds e ic t n o teR c e tr n fcue v rino ti d vc . o h se Ee t n
n p c ai s f h o h se ma ua trd eso f hs e ie R c e tr lcr -
o
o
isg aa te tep r r n eo i s mio d co p o u t t teoiia OE s e ic -
c u rne s h ef ma c ft e c n u tr rd cs o h r n l M p c a
o
s
g
t n .T pc lv le aefr eee c p r o e o l. eti mii m o ma i m rt g
i s ‘y ia’ au s r o rfrn e up s s ny C r n nmu
o
a
r xmu ai s
n
ma b b s do p o u t h rceiain d sg , i lt n o s mpetsig
y e a e n rd c c aa tr t , e in smuai , r a l e t .
z o
o
n
© 2 1 R cetr l t n s LC Al i t R sre 0 1 2 1
0 3 ohs E cr i , L . lRg s eevd 7 1 0 3
e e oc
h
T l r m r, l s v iw wrcl . m
o e n oe p ae it w . e c o
a
e
s
o ec
Freescale Semiconductor
Technical Data
Document Number: MRF5S9101N
Rev. 4, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier
applications.
GSM Application
•
Typical GSM Performance: V
DD
= 26 Volts, I
DQ
= 700 mA, P
out
=
100 Watts CW, Full Frequency Band (869 - 894 MHz and 921 - 960 MHz)
Power Gain - 17.5 dB
Drain Efficiency - 60%
GSM EDGE Application
•
Typical GSM EDGE Performance: V
DD
= 28 Volts, I
DQ
= 650 mA, P
out
=
50 Watts Avg., Full Frequency Band (869 - 894 MHz and 921 - 960 MHz)
Power Gain — 18 dB
Spectral Regrowth @ 400 kHz Offset = - 63 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 2.3% rms
•
Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 100 W CW
Output Power
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
200°C Capable Plastic Package
•
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF5S9101NR1
MRF5S9101NBR1
869 - 960 MHz, 100 W, 26 V
GSM/GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF5S9101NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF5S9101NBR1
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
- 0.5, +68
- 0.5, +15
427
2.44
- 65 to +150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 80°C, 50 W CW
Symbol
R
θJC
Value
(1,2)
0.41
0.47
Unit
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF5S9101NR1 MRF5S9101NBR1
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1C (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 400
μAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 700 mAdc)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 6 Adc)
Dynamic Characteristics
(1)
Output Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
C
rss
—
—
70
2.2
—
—
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2
—
—
—
2.8
3.7
0.21
7
3.5
—
0.3
—
Vdc
Vdc
Vdc
S
Symbol
I
DSS
I
DSS
I
GSS
Min
—
—
—
Typ
—
—
—
Max
10
1
1
Unit
μAdc
μAdc
μAdc
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 26 Vdc, P
out
= 100 W, I
DQ
= 700 mA, f = 960 MHz
Power Gain
G
ps
16
17.5
19
Drain Efficiency
Input Return Loss
P
out
@ 1 dB Compression Point, CW
1. Part internally input matched.
η
D
IRL
P1dB
56
—
100
60
- 15
110
—
-9
—
dB
%
dB
W
(continued)
MRF5S9101NR1 MRF5S9101NBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical GSM EDGE Performances
(In Freescale GSM EDGE Test Fixture, 50
οhm
system) V
DD
= 28 Vdc, P
out
= 50 W Avg.,
I
DQ
= 650 mA, 869 - 894 MHz, 920 - 960 MHz EDGE Modulation
Power Gain
Drain Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
G
ps
η
D
EVM
SR1
SR2
—
—
—
—
—
18
42
2.3
- 63
- 78
—
—
—
—
—
dB
%
% rms
dBc
dBc
MRF5S9101NR1 MRF5S9101NBR1
RF Device Data
Freescale Semiconductor
3
Z11
V
BIAS
C1
R1
R2
C4
C7
Z13
R3
C16
RF
INPUT
DUT
Z10
Z9
C19
C10
Z8
Z7
C17
Z1
C11
C12
C15
C18
C20
C13
Z2
C14
Z3
Z4
Z5
Z6
RF
OUTPUT
C8
C5
C2
+
C21
V
SUPPLY
Z12
C9
C6
C3
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.698″
0.720″
0.195″
0.524″
0.233″
0.560″
0.095″
0.472″
0.384″
x 0.827″ Microstrip
x 0.788″ Microstrip
x 0.087″ Microstrip
x 0.087″ Microstrip
x 0.087″ Microstrip
x 0.087″ Microstrip
x 0.827″ Microstrip
x 0.087″ Microstrip
x 0.087″ Microstrip
Z10
Z11, Z12*
Z13*
PCB
1.491″ x 0.087″ Microstrip
1.6″ x 0.089″ Microstrip
(quarter wave length for supply purpose)
1.2″ x 0.059″ Microstrip
(quarter wave length for bias purpose)
Taconic TLX8 - 0300, 0.030″,
ε
r
= 2.55
*Variable for tuning
Figure 1. MRF5S9101NR1(NBR1) 900 MHz Test Circuit Schematic
Table 6. MRF5S9101NR1(NBR1) 900 MHz Test Circuit Component Designations and Values
Part
C1, C2, C3
C4, C5, C6
C7, C8, C9
C10, C11
C12, C13
C14, C15, C16, C17
C18
C19
C20
C21
R1, R2
R3
Description
4.7
mF
Chip Capacitors (2220)
10 nF 200B Chip Capacitors
33 pF 100B Chip Capacitors
22 pF 100B Chip Capacitors
10 pF 100B Chip Capacitors
8.2 pF 100B Chip Capacitors
5.6 pF 100B Chip Capacitor
4.7 pF 100B Chip Capacitor
3.9 pF 100B Chip Capacitor
220
mF,
50 V Electrolytic Capacitor, Axial
10 kW, 1/4 W Chip Resistors (1206)
10
W,
1/4 W Chip Resistor (1206)
Part Number
GRM55ER7H475KA01
200B103MW
100B330JW
100B220GW
100B100GW
100B8R2CW
100B5R6CW
100B4R7BW
100B3R9BW
516D227M050NP7B
Manufacturer
Murata
ATC
ATC
ATC
ATC
ATC
ATC
ATC
ATC
Sprague
MRF5S9101NR1 MRF5S9101NBR1
4
RF Device Data
Freescale Semiconductor
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
