MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF5S21130H/D
The RF MOSFET Line
RF Power Field Effect Transistors
MRF5S21130HR3
Designed for W - CDMA base station applications at frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
•
Typical 2 - carrier W - CDMA Performance: V
DD
= 28 Volts, I
DQ
= 1200 mA,
P
out
= 28 Watts Avg., Full Frequency Band, Channel Bandwidth =
3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 13.5 dB
Efficiency — 26%
IM3 @ 10 MHz Offset — - 37 dBc @ 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 39 dBc @ 3.84 MHz Channel Bandwidth
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 92 Watts CW
Output Power
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched, Controlled Q, for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
Lower Thermal Resistance Package
•
Low Gold Plating Thickness on Leads, 40
µ
″
Nominal.
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
N - Channel Enhancement - Mode Lateral MOSFETs
MRF5S21130HSR3
2170 MHz, 28 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF5S21130HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRF5S21130HSR3
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
CW Operation
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
CW
Value
65
- 0.5, +15
372
2.13
- 65 to +150
200
92
Unit
Vdc
Vdc
W
W/°C
°C
°C
W
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 92 W CW
Case Temperature 80°C, 28 W CW
Symbol
R
θJC
Value (1)
0.44
0.47
Unit
°C/W
(1) Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MOTOROLA RF
Motorola, Inc. 2004
DEVICE DATA
MRF5S21130HR3 MRF5S21130HSR3
1
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
2 (Minimum)
M4 (Minimum)
C7 (Minimum)
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 300
µAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1200 mAdc)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 3 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 3 Adc)
DYNAMIC CHARACTERISTICS (1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
2.6
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2.5
—
—
—
2.7
3.7
0.26
7.5
3.5
—
0.3
—
Vdc
Vdc
Vdc
S
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
µAdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1200 mA, P
out
= 28 W Avg., f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR measured in
3.84 MHz Channel Bandwidth @
±5
MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @
±10
MHz Offset. Peak/Avg. = 8.5 dB @
0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
(1) Part is internally matched both on input and output.
G
ps
η
D
IM3
ACPR
IRL
—
—
12
24
13.5
26
- 37
- 39
- 12
—
—
- 35
- 37
-9
dB
%
dBc
dBc
dB
MRF5S21130HR3 MRF5S21130HSR3
2
MOTOROLA RF DEVICE DATA
R1
V
BIAS
+
C1
C11
R2
C3
C5
Z9
RF
INPUT Z1
C7
Z7
Z2
C8
Z3
Z4
Z5
Z10
Z6
C10
C6
C17
DUT
Z8
Z11
Z12
Z13
C9
+
C13
+
C15
+
C20
V
SUPPLY
C18
Z14
Z15
Z16
RF
OUTPUT
C19
+
C2
C12
C4
+
C14
+
C16
Z1
Z2
Z3
Z4
Z5
Z6, Z7
Z8
0.500″ x 0.083″ Microstrip
0.995″ x 0.083″ Microstrip
0.905″ x 0.083″ Microstrip
0.159″ x 1.024″ Microstrip
0.117″ x 1.024″ Microstrip
0.749″ x 0.083″ Microstrip
0.117″ x 1.000″ Microstrip
Z9, Z10
Z11
Z12
Z13
Z14, Z15
Z16
PCB
0.709″ x 0.083″ Microstrip
0.415″ x 1.000″ Microstrip
0.531″ x 0.083″ Microstrip
0.994″ x 0.083″ Microstrip
0.070″ x 0.220″ Microstrip
0.430″ x 0.083″ Microstrip
Taconic TLX8, 0.030″,
ε
r
= 2.55
Figure 1. MRF5S21130HR3(HSR3) Test Circuit Schematic
Table 1. MRF5S21130HR3(HSR3) Test Circuit Component Designations and Values
Part
C1, C2, C13, C14, C15, C16
C3, C4, C11, C12
C5, C6, C7, C9, C10, C18, C19
C8
C17
C20
R1, R2
Description
10
µF,
35 V Tantalum Capacitors
220 nF Chip Capacitors (1812)
6.8 pF 100B Chip Capacitors
0.1 pF 100B Chip Capacitor
0.5 pF 100B Chip Capacitor
220
µF,
63 V Electrolytic Capacitor, Radial
1 kW, 1/4 W Chip Resistors
Part Number
293D1106X9035D
1812Y224KXA
100B6R8CW
100B0R1BW
100B0R5BW
13668221
Manufacturer
Vishay - Sprague
Vishay - Vitramon
ATC
ATC
ATC
Philips
MOTOROLA RF DEVICE DATA
MRF5S21130HR3 MRF5S21130HSR3
3
C1
C3
R1
C9
C11
C13 C15
C20
R2
C5
CUT OUT AREA
C18
C7
C8
C6
C17
C19
C2
C4
C10
C12
C14 C16
MRF5S21130
Rev 0
Figure 2. MRF5S21130HR3(HSR3) Test Circuit Component Layout
MRF5S21130HR3 MRF5S21130HSR3
4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
14
13
G ps , POWER GAIN (dB)
12
11
10
9
8
7
IM3
ACPR
IRL
V
DD
= 28 Vdc, P
out
= 28 W (Avg.), I
DQ
= 1200 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, Peak/Avg. = 8.5 dB
@ 0.01% Probability (CCDF)
G
ps
η
D
35
30
25
20
−28
−32
−36
−40
2100
2120
2140
2160
2180
2200
−44
2220
η
D
, DRAIN
EFFICIENCY (%)
IM3 (dBc), ACPR (dBc)
−10
−15
−20
−25
−30
6
2060
2080
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance
15
14.5
G ps , POWER GAIN (dB)
14
I
DQ
= 1600 mA
1400 mA
1200 mA
1000 mA
800 mA
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
−25
−30
−35
−40
−45
−50
−55
1000 mA
−60
−65
1
10
800 mA
I
DQ
= 1600 mA
1400 mA
1200 mA
13.5
13
12.5
12
V
DD
= 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
1
10
100
1000
IRL, INPUT RETURN LOSS (dB)
V
DD
= 28 Vdc
f1 = 2135 MHz,
f2 = 2145 MHz
Two−Tone Measurement,
10 MHz Tone Spacing
100
1000
11.5
11
P
out
, OUTPUT POWER (WATTS) PEP
P
out
, OUTPUT POWER (WATTS) PEP
Figure 4. Two - Tone Power Gain versus
Output Power
Figure 5. Third Order Intermodulation Distortion
versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
−25
−30
−35
−40
−45
7th Order
−50
−55
−60
0.1
V
DD
= 28 Vdc, P
out
= 130 W (PEP), I
DQ
= 1200 mA
Two−Tone Measurements, Center Frequency = 2140 MHz
1
10
100
5th Order
3rd Order
Pout , OUTPUT POWER (dBm)
58
57
Ideal
56
P3dB = 53.02 dBm (200.5 W)
55
54
P1dB = 52.5 dBm (178 W)
53
Actual
52
51
50
35
37
39
V
DD
= 28 Vdc, I
DQ
= 1200 mA
Pulsed CW, 5
µsec(on),
1 msec(off)
Center Frequency = 2140 MHz
41
43
45
TWO−TONE SPACING (MHz)
P
in
, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
MOTOROLA RF DEVICE DATA
MRF5S21130HR3 MRF5S21130HSR3
5
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