Freescale Semiconductor
Technical Data
Document Number: MRF377
Rev. 1, 12/2004
RF Power Field - Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of this
device make it ideal for large- signal, common source amplifier applications in 32
volt digital television transmitter equipment.
•
Typical Broadband DVBT OFDM Performance @ 470 - 860 MHz, 32 Volts,
I
DQ
= 2.0 A, 8K Mode, 64 QAM
Output Power — 45 Watts Avg.
Power Gain
≥
16.7 dB
Efficiency
≥
21%
ACPR
≤
- 58 dBc
•
Typical Broadband ATSC 8VSB Performance @ 470 - 860 MHz, 32 Volts,
I
DQ
= 2.0 A
Output Power — 80 Watts Avg.
Power Gain
≥
16.5 dB
Efficiency
≥
27.5%
IMD
≤
- 31.3 dBc
•
Internally Input and Output Matched for Ease of Use
•
Integrated ESD Protection
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 45 Watts DVBT
OFDM Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
(1)
Rating
Drain - Source Voltage
Gate - Source Voltage
Drain Current - Continuous
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
I
D
P
D
T
stg
T
J
MRF377
MRF377R3
MRF377R5
470 - 860 MHz, 240 W, 32 V
LATERAL N - CHANNEL
RF POWER MOSFET
ARCHIVE INFORMATION
CASE 375G - 04, STYLE 1
NI - 860C3
Value
- 0.5, +65
- 0.5, +15
17
486
2.78
- 65 to +150
200
Unit
Vdc
Vdc
Adc
W
W/°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
0.36
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Charge Device Model
1. Each side of device measured separately.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Class
1 (Minimum)
M3 (Minimum)
7 (Minimum)
©
Freescale Semiconductor, Inc., 2004, 2006. All rights reserved.
MRF377 MRF377R3 MRF377R5
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
(1)
Drain - Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
=10
μA)
Zero Gate Voltage Drain Current
(V
DS
= 32 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
(1)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
μA)
V
GS(th)
V
GS(Q)
V
DS(on)
—
—
—
2.8
3.5
0.27
—
—
—
Vdc
Vdc
Vdc
V
(BR)DSS
I
DSS
I
GSS
65
—
—
—
—
—
—
1
1
Vdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
ARCHIVE INFORMATION
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 3 A)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
Common Source Power Gain
(V
DD
= 32 Vdc, P
out
= 45 W Avg., I
DQ
= 2 x 1000 mA,
f = 860 MHz)
Drain Efficiency
(V
DD
= 32 Vdc, P
out
= 45 W Avg., I
DQ
= 2 x 1000 mA,
f = 860 MHz)
Adjacent Channel Power Ratio
(V
DD
= 32 Vdc, P
out
= 45 W Avg., I
DQ
= 2 x 1000 mA,
f = 860 MHz)
C
rss
—
3.2
—
pF
Functional Characteristics
(In DVBT OFDM Single - Channel, Narrowband Fixture, 50 ohm system)
(2)
G
ps
16.5
18.2
—
dB
η
21
22.9
—
%
ACPR
—
- 59.2
- 57
dBc
Typical Characteristics
(In DVBT OFDM Single - Channel, Broadband Fixture, 50 ohm system)
(2)
Common Source Power Gain
(V
DD
= 32 Vdc, P
out
= 45 W Avg., I
DQ
= 2 x 1000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
Drain Efficiency
(V
DD
= 32 Vdc, P
out
= 45 W Avg., I
DQ
= 2 x 1000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
Adjacent Channel Power Ratio
(V
DD
= 32 Vdc, P
out
= 45 W Avg., I
DQ
= 2 x 1000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
1. Each side of device measured separately.
2. Measured in push - pull configuration.
G
ps
—
—
—
—
—
η
—
—
—
—
—
ACPR
—
—
—
—
—
- 59.3
- 59.3
- 58.7
- 58.7
- 58.1
—
—
—
—
—
23.5
25.8
23.0
22.7
21.3
—
—
—
—
—
dBc
17.6
17.6
17.4
17.4
16.8
—
—
—
—
—
%
dB
MRF377 MRF377R3 MRF377R5
2
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Gate Quiescent Voltage
(V
DS
= 32 Vdc, I
D
= 225 mA)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
T
ypical Characteristics
(In ATSC 8VSB Single - Channel, Broadband Fixture, 50 ohm system)
(1)
Common Source Power Gain
(V
DD
= 32 Vdc, P
out
= 80 W Avg., I
DQ
= 2 x 1000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
Drain Efficiency
(V
DD
= 32 Vdc, P
out
= 80 W Avg., I
DQ
= 2 x 1000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
Intermodulation Distortion
(V
DD
= 32 Vdc, P
out
= 80 W Avg., I
DQ
= 2 x 1000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
1. Measured in push - pull configuration.
G
ps
—
—
—
—
—
η
—
—
—
—
—
IMD
—
—
—
—
—
31.7
32.7
32.9
34.2
35.4
—
—
—
—
—
31.0
34.3
30.1
29.6
27.8
—
—
—
—
—
dBc
17.5
17.5
17.2
17.2
16.6
—
—
—
—
—
%
dB
ARCHIVE INFORMATION
MRF377 MRF377R3 MRF377R5
RF Device Data
Freescale Semiconductor
3
ARCHIVE INFORMATION
Table 5. 845 - 875 MHz Narrowband Test Circuit Component Designations and Values
Part
B1, B2
Balun 1, Balun 2
C1
C2
C3
C4, C5
C6
C7, C8, C9, C10
C11, C12
C13, C14, C15, C16
C17, C18
C19, C20
Description
Ferrite Beads, Surface Mount, 11
Ω
(0805)
0.8 - 1GHz Xinger Balun
33 pF Chip Capacitor (0805)
2.7 pF Chip Capacitor (0603)
12 pF Chip Capacitor (0805)
6.8 pF Chip Capacitors (0805)
2.7 pF Chip Capacitor (0805)
3.3 pF Chip Capacitors (0805)
2.2
μF,
50 V Chip Capacitors
0.01
μF,
100 V Chip Capacitors
0.56
μF,
50 V Chip Capacitors
10
μF,
50 V Tantalum Chip Capacitors
47
μF,
16 V Tantalum Chip Capacitors
470
μF,
63 V Electrolytic Capacitors
12 nH Inductor (0603)
7.15 nH Inductor
10 nH Inductor (0603)
24
Ω,
1/8 W, 5% Chip Resistors (1206)
Brass Wear Shims
Arlon 30 mil,
ε
r
= 2.56
DS1152
DS Electronics
3A412
08055J330JBT
06035J2R7BBT
08051J120GBT
08051J6R8BBT
0805J2R7BBT
08051J3R3BBT
C1825C225J5RAC3810
C1825C103J1GAC
C1825C564J5RAC
522Z050/100MTRE
TPSD476K016R0150
NACZF471M63V (18x22)
0603HC- 12NXJB
1606 - 7
0603HC- 10NXJB
Part Number
2508051107Y0
Manufacturer
Fair - Rite
Anaran
AVX / Kyocera
AVX / Kyocera
AVX / Kyocera
AVX / Kyocera
AVX / Kyocera
AVX / Kyocera
Kemet
Kemet
Kemet
Tecate
AVX / Kyocera
Nippon
CoilCraft
CoilCraft
CoilCraft
ARCHIVE INFORMATION
C21, C22, C23, C24
C25, C26
L1
L2
L3, L4
R1, R2
WB1, WB2, WB3, WB4
PCB
MRF377 Gate
C19
V
GG
C22
C21
Balun 1
C14
R1
WB1
L3
B1
C15
WB3
C18
C11
C9
MRF377 Drain
V
DD
C26
Balun 2
L2
C5
C6
C7
C2
C1
L1
WB2
C3
C4
WB4
C8
R2
C13
C24
V
GG
C23
L4
C10
B2
C16
C17
C25
C12
C20
DS1152−A Rev 0
V
DD
DS1152−B Rev 0
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 1. 845 - 875 MHz Narrowband Test Circuit Component Layout
MRF377 MRF377R3 MRF377R5
4
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
TYPICAL NARROWBAND CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc)
19
18.5
G
ps
G ps , POWER GAIN (dB)
18
−20
−30
I
DQ
= 1400 mA
−40
1600 mA
−50
1800 mA
2000 mA
2200 mA
−60
V
DD
= 32 Vdc
f1 = 859.95 MHz, f2 = 860.05 MHz
17.5
17
V
DD
= 32 Vdc
I
DQ
= 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
10
100
P
out
, OUTPUT POWER (WATTS) PEP
16.5
16
−70
10
ARCHIVE INFORMATION
P
out
, OUTPUT POWER (WATTS) PEP
Figure 2. Two - Tone Power Gain versus
Output Power
Figure 3. Third Order Intermodulation Distortion
versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
−20
−30
η
, DRAIN EFFICIENCY (%)
−40
−50
−60
7th Order
−70
−80
10
V
DD
= 32 Vdc
I
DQ
= 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
100
P
out
, OUTPUT POWER (WATTS) PEP
45
40
35
30
25
20
15
10
5
10
100
P
out
, OUTPUT POWER (WATTS) PEP
V
DD
= 32 Vdc
I
DQ
= 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
η
3rd Order
5th Order
Figure 4. Intermodulation Distortion Products
versus Output Power
Figure 5. Two - Tone Drain Efficiency versus
Output Power
18
G ps , POWER GAIN (dB)
17
16
15
14
13
12
10
G
ps
40
20
η
V
DD
= 32 Vdc
I
DQ
= 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
IMD
0
−20
−40
−60
−80
100
P
out
, OUTPUT POWER (WATTS) PEP
Figure 6. Power Gain, Efficiency and IMD
versus Output Power
MRF377 MRF377R3 MRF377R5
RF Device Data
Freescale Semiconductor
5
η
, DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
19
60
ARCHIVE INFORMATION
100
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