MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF21125/D
The RF Sub - Micron MOSFET Line
RF Power Field Effect Transistors
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
•
Typical 2 - carrier W - CDMA Performance for V
DD
= 28 Volts, I
DQ
= 1600
mA, f1 = 2.1125 GHz, f2 = 2.1225 GHz, Channel bandwidth = 3.84 MHz,
adjacent channels at
±
5 MHz , ACPR and IM3 measured in 3.84 MHz
bandwidth. Peak/Avg = 8.5 dB @ 0.01% probability on CCDF.
Output Power — 20 Watts
Efficiency — 18%
Gain — 13 dB
IM3 — - 43 dBc
ACPR — - 45 dBc
•
100% Tested under 2 - carrier W - CDMA
•
Internally Matched, Controlled Q, for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 125 Watts (CW)
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
N - Channel Enhancement - Mode Lateral MOSFETs
MRF21125R3
MRF21125SR3
2170 MHz, 125 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
Freescale Semiconductor, Inc...
CASE 465B - 03, STYLE 1
NI - 880
MRF21125R3
CASE 465C - 02, STYLE 1
NI - 880S
MRF21125SR3
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
- 0.5, +15
330
1.89
- 65 to +150
200
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value (1)
0.53
Unit
°C/W
(1) Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 7
MOTOROLA RF
Motorola, Inc. 2004
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF21125R3 MRF21125SR3
1
Freescale Semiconductor, Inc.
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
2 (Minimum)
M3 (Minimum)
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain - Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 100
µAdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
V
(BR)DSS
I
GSS
I
DSS
65
—
—
—
—
—
—
1
10
Vdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
Freescale Semiconductor, Inc...
ON CHARACTERISTICS
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 3 Adc)
Gate Threshold Voltage
(V
DS
= 10 V, I
D
= 300
µA)
Gate Quiescent Voltage
(V
DS
= 28 V, I
D
= 1300 mA)
Drain - Source On - Voltage
(V
GS
= 10 V, I
D
= 1 A)
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
C
rss
—
5.4
—
pF
g
fs
V
GS(th)
V
GS(Q)
V
DS(on)
—
2
2.5
—
10.8
—
3.9
0.12
—
4
4.5
—
S
Vdc
Vdc
Vdc
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system) 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth, IM3 measured
in 3.84 MHz Bandwidth. Peak/Avg = 8.5 dB @ 0.01% probability on CCDF.
Common - Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 20 W Avg, 2-carrier W-CDMA, I
DQ
= 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz)
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 20 W Avg, 2-carrier W-CDMA, I
DQ
= 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz)
Third Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 20 W Avg, 2-carrier W-CDMA, I
DQ
= 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz; IM3 measured at f1 - 10 MHz and f2 +10 MHz referenced to
carrier channel power.)
Adjacent Channel Power Ratio
(V
DD
= 28 Vdc, P
out
= 20 W Avg, 2-carrier W-CDMA, I
DQ
= 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz; ACPR measured at f1 - 5 MHz and f2 +5 MHz referenced to
carrier channel power.)
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 20 W Avg, 2-carrier W-CDMA, I
DQ
= 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz)
Output Mismatch Stress
(V
DD
= 28 Vdc, P
out
= 125 W CW, I
DQ
= 1600 mA, f = 2170 MHz,
VSWR = 5:1, All Phase Angles at Frequency of Test)
(1) Part is internally matched both on input and output.
(continued)
G
ps
12
13
—
dB
η
17
18
—
%
IM3
—
- 43
- 40
dBc
ACPR
—
- 45
- 40
dBc
IRL
—
- 12
- 9.0
dB
Ψ
No Degradation In Output Power
Before and After Test
MRF21125R3 MRF21125SR3
2
For More Information On This Product,
Go to: www.freescale.com
MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS — continued
(T
C
= 25°C unless otherwise noted)
Characteristic
TYPICAL TWO - TONE PERFORMANCE
(In Motorola Test Fixture)
Common - Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 125 W PEP, I
DQ
= 1600 mA, f1 = 2110 MHz,
f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 125 W PEP, I
DQ
= 1600 mA, f1 = 2110 MHz,
f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 125 W PEP, I
DQ
= 1600 mA, f1 = 2110 MHz,
f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
TYPICAL CW PERFORMANCE
Common - Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 125 W CW, I
DQ
= 1600 mA, f1 = 2170.0 MHz)
G
ps
η
—
—
11.5
46
—
—
dB
%
G
ps
—
12
—
dB
Symbol
Min
Typ
Max
Unit
η
—
34
—
%
IMD
—
- 30
—
dBc
Freescale Semiconductor, Inc...
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 125 W CW, I
DQ
= 1600 mA, f = 2170.0 MHz)
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF21125R3 MRF21125SR3
3
Freescale Semiconductor, Inc.
B1
R4
V
GG
+
R2
+
C2
C3
+
C4
R1
R3
C5
C6
C7
C8
C9
C10
W1
+
C11
+
C12
C13
C14
V
DD
+
Z6
RF
INPUT
Z7
RF
OUTPUT
Z1
C1
Z2
Z3
Z4
Z5
DUT
Z8
Z9
Z10
Z11
Z12
C15
Z13
C16
Freescale Semiconductor, Inc...
Z1
Z2
Z3
Z4
Z5
Z6
Z7
1.212″
0.236″
0.086″
0.357″
0.274″
0.466″
0.501″
x 0.082″
x 0.082″
x 0.254″
x 0.082″
x 1.030″
x 0.050″
x 0.050″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z8
Z9
Z10
Z11
Z12
Z13
PCB
0.600″ x 1.056″ Microstrip
0.179″ x 0.219″ Microstrip
0.100″ x 0.336″ Microstrip
0.534″ x 0.142″ Microstrip
0.089″ x 0.080″ Microstrip
0.620″ x 0.080″ Microstrip
Arlon GX0300 - 55 - 22, 0.030″,
ε
r
= 2.55
Figure 1. MRF21125 Test Circuit Schematic
Table 1. MRF21125 Test Circuit Component Designations and Values
Designators
B1
C1
C2, C4, C11, C12
C3, C7
C5, C14
C6
C8
C9
C10
C13
C15
C16
R1
R2
R3
R4
W1
Description
Ferrite Bead (Square), Fair Rite #2743019447
9.1 pF Chip Capacitor, B Case, ATC #100B9R1CCA500X
22
µF,
35 V Tantalum Surface Mount Chip Capacitors, Kemet #T491X226K035AS4394
20000 pF Chip Capacitors, B Case, ATC #100B203JCA50X
5.1 pF Chip Capacitors, B Case, ATC #100B5R1CCA500X
100000 pF Chip Capacitor, B Case, ATC #100B104JCA50X
10000 pF Chip Capacitor, B Case, ATC #100B103JCA50X
7.5 pF Chip Capacitor, B Case, ATC #100B7R5CCA500X
1.2 pF Chip Capacitor, B Case, ATC #100B1R2CCA500X
0.1
µF
Chip Capacitor, Kemet #CDR33BX104AKWS
16 pF Chip Capacitor, B Case, ATC #100B160KP500X
0.6 - 4.5 pF Variable Capacitor, Johanson Gigatrim #27271SL
1.0 kΩ, 1/8 W Chip Resistor
560 kΩ, 1/8 W Chip Resistor
4.7
Ω,
1/8 W Chip Resistor
12
Ω,
1/8 W Chip Resistor
Solid Copper Buss Wire, 16 AWG
MRF21125R3 MRF21125SR3
4
For More Information On This Product,
Go to: www.freescale.com
MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
VGG
V DD
C11
C9 C10
C8 R4
C7
C6
C12
W1
C13
C14
B1
R1
R2
C2 C3 C4
R3
C5
C15
C1
C16
Freescale Semiconductor, Inc...
MRF21125 Rev 5
Figure 2. MRF21125 Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF21125R3 MRF21125SR3
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
