Freescale Semiconductor
Technical Data
Document Number: MRF21125
Rev. 9, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
•
Typical 2 - Carrier W - CDMA Performance for V
DD
= 28 Volts, I
DQ
=
1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz, Channel bandwidth =
3.84 MHz, adjacent channels at
±
5 MHz , ACPR and IM3 measured in
3.84 MHz bandwidth. Peak/Avg. = 8.5 dB @ 0.01% probability on CCDF.
Output Power — 20 Watts
Efficiency — 18%
Gain — 13 dB
IM3 — - 43 dBc
ACPR — - 45 dBc
•
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 125 Watts CW
Output Power
Features
•
Internally Matched for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF21125R3
MRF21125SR3
2110 - 2170 MHz, 125 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF21125R3
CASE 465C - 02, STYLE 1
NI - 880S
MRF21125SR3
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
Value
- 0.5, +65
- 0.5, +15
330
1.89
- 65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
0.53
Unit
°C/W
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF21125R3 MRF21125SR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Class
2 (Minimum)
M3 (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Drain- Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 100
μAdc)
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
On Characteristics
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 3 Adc)
Gate Threshold Voltage
(V
DS
= 10 V, I
D
= 300
μA)
Gate Quiescent Voltage
(V
DS
= 28 V, I
D
= 1300 mA)
Drain- Source On - Voltage
(V
GS
= 10 V, I
D
= 1 A)
Dynamic Characteristics
Reverse Transfer Capacitance
(1)
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
C
rss
—
5.4
—
pF
g
fs
V
GS(th)
V
GS(Q)
V
DS(on)
—
2
2.5
—
10.8
—
3.9
0.12
—
4
4.5
—
S
Vdc
Vdc
Vdc
V
(BR)DSS
I
GSS
I
DSS
65
—
—
—
—
—
—
1
10
Vdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth, IM3 measured
in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% probability on CCDF.
Common- Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 20 W Avg, 2-carrier W-CDMA, I
DQ
= 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz)
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 20 W Avg, 2-carrier W-CDMA, I
DQ
= 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz)
Third Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 20 W Avg, 2-carrier W-CDMA, I
DQ
= 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz; IM3 measured at f1 - 10 MHz and f2 +10 MHz referenced to
carrier channel power.)
Adjacent Channel Power Ratio
(V
DD
= 28 Vdc, P
out
= 20 W Avg, 2-carrier W-CDMA, I
DQ
= 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz; ACPR measured at f1 - 5 MHz and f2 +5 MHz referenced to
carrier channel power.)
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 20 W Avg, 2-carrier W-CDMA, I
DQ
= 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz)
1. Part internally matched both on input and output.
(continued)
G
ps
12
13
—
dB
η
17
18
—
%
IM3
—
- 43
- 40
dBc
ACPR
—
- 45
- 40
dBc
IRL
—
- 12
- 9.0
dB
MRF21125R3 MRF21125SR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Typical Two - Tone Performance
(In Freescale Test Fixture)
Common- Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 125 W PEP, I
DQ
= 1600 mA, f1 = 2110 MHz,
f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 125 W PEP, I
DQ
= 1600 mA, f1 = 2110 MHz,
f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 125 W PEP, I
DQ
= 1600 mA, f1 = 2110 MHz,
f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Typical CW Performance
Common- Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 125 W CW, I
DQ
= 1600 mA, f1 = 2170.0 MHz)
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 125 W CW, I
DQ
= 1600 mA, f = 2170.0 MHz)
G
ps
η
—
—
11.5
46
—
—
dB
%
G
ps
—
12
—
dB
Symbol
Min
Typ
Max
Unit
η
—
34
—
%
IMD
—
- 30
—
dBc
MRF21125R3 MRF21125SR3
RF Device Data
Freescale Semiconductor
3
B1
R4
V
GG
+
R2
+
C2
C3
+
C4
R1
R3
C5
C6
C7
C8
C9
C10
W1
+
C11
+
C12
C13
C14
V
DD
+
Z6
RF
INPUT
Z7
RF
OUTPUT
Z1
C1
Z2
Z3
Z4
Z5
DUT
Z8
Z9
Z10
Z11
Z12
C15
Z13
C16
Z1
Z2
Z3
Z4
Z5
Z6
Z7
1.212″ x 0.082″ Microstrip
0.236″ x 0.082″ Microstrip
0.086″ x 0.254″ Microstrip
0.357″ x 0.082″ Microstrip
0.274″ x 1.030″ Microstrip
0.466″ x 0.050″ Microstrip
0.501″ x 0.050″ Microstrip
Z8
Z9
Z10
Z11
Z12
Z13
PCB
0.600″ x 1.056″ Microstrip
0.179″ x 0.219″ Microstrip
0.100″ x 0.336″ Microstrip
0.534″ x 0.142″ Microstrip
0.089″ x 0.080″ Microstrip
0.620″ x 0.080″ Microstrip
Arlon GX0300 - 55- 22, 0.030″,
ε
r
= 2.55
Figure 1. MRF21125 Test Circuit Schematic
Table 5. MRF21125 Test Circuit Component Designations and Values
Designators
B1
C1
C2, C4, C11, C12
C3, C7
C5, C14
C6
C8
C9
C10
C13
C15
C16
R1
R2
R3
R4
W1
Description
Ferrite Bead (Square), Fair Rite #2743019447
9.1 pF Chip Capacitor, ATC #100B9R1CCA500X
22
μF,
35 V Tantalum Surface Mount Chip Capacitors, Kemet #T491X226K035AS4394
20000 pF Chip Capacitors, ATC #100B203JCA50X
5.1 pF Chip Capacitors, ATC #100B5R1CCA500X
100000 pF Chip Capacitor, ATC #100B104JCA50X
10000 pF Chip Capacitor, ATC #100B103JCA50X
7.5 pF Chip Capacitor, ATC #100B7R5CCA500X
1.2 pF Chip Capacitor, ATC #100B1R2CCA500X
0.1
μF
Chip Capacitor, Kemet #CDR33BX104AKWS
16 pF Chip Capacitor, ATC #100B160KP500X
0.6 - 4.5 pF Variable Capacitor, Johanson Gigatrim #27271SL
1.0 kΩ, 1/8 W Chip Resistor
560 kΩ, 1/8 W Chip Resistor
4.7
Ω,
1/8 W Chip Resistor
12
Ω,
1/8 W Chip Resistor
Solid Copper Buss Wire, 16 AWG
MRF21125R3 MRF21125SR3
4
RF Device Data
Freescale Semiconductor
VGG
V DD
C11
C9 C10
C8 R4
C7
C6
C12
W1
C13
C14
B1
R1
R2
C2 C3 C4
R3
C5
C15
C1
C16
MRF21125 Rev 5
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF21125 Test Circuit Component Layout
MRF21125R3 MRF21125SR3
RF Device Data
Freescale Semiconductor
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
