MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for W–CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN–PCS/cellular radio and WLL
applications.
•
W–CDMA Performance @ –45 dBc, 5 MHz Offset, 15 DTCH, 1 Perch
Output Power — 14 Watts (Avg.)
Power Gain — 11.5 dB
Efficiency — 16%
•
Internally Matched, Controlled Q, for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2170 MHz, 120 Watts (CW)
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large–Signal Impedance Parameters
MRF21120
MRF21120S
2170 MHz, 120 W, 28 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 375D–03, STYLE 1
(NI–1230)
(MRF21120)
CASE 375E–03, STYLE 1
(NI–1230S)
(MRF21120S)
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
+15, –0.5
389
2.22
–65 to +150
200
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
0.45
Unit
°C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 5
MRF21120 MRF21120S
5.2–322
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
(1)
Drain–Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 20
µAdc)
Gate–Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc )
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
ON CHARACTERISTICS
(1)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
Gate Threshold Voltage
(V
DS
= 10 V, I
D
= 200
µA)
Gate Quiescent Voltage
(V
DS
= 28 V, I
D
= 500 mA)
Drain–Source On–Voltage
(V
GS
= 10 V, I
D
= 2 A)
DYNAMIC CHARACTERISTICS
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
FUNCTIONAL TESTS
(In Motorola Test Fixture) (2)
Common–Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 120 W PEP, I
DQ
= 2
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 120 W PEP, I
DQ
= 2
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 120 W PEP, I
DQ
= 2
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 120 W PEP, I
DQ
= 2
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Common–Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 120 W PEP, I
DQ
= 2
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
Common–Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 120 W PEP, I
DQ
= 2
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 120 W PEP, I
DQ
= 2
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 120 W PEP, I
DQ
= 2
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 120 W PEP, I
DQ
= 2
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
G
ps
500 mA,
MRF21120
MRF21120S
η
500 mA,
IMD
500 mA,
MRF21120
MRF21120S
IRL
500 mA,
G
ps
500 mA,
G
ps
500 mA,
η
500 mA,
IMD
500 mA,
IRL
500 mA,
P1dB
—
120
—
Watts
—
–12
—
dB
—
–31
—
dB
—
34.5
—
%
—
11.5
—
dB
—
11.5
—
dB
—
—
—
–31
–31
–12
–28
–27
–9
dB
dB
10.5
10.4
30
11.4
11.2
34.5
—
—
—
%
dB
C
rss
—
2.8
—
pF
g
fs
V
GS(th)
V
GS(Q)
V
DS(on)
—
2.5
3
—
4.8
3
3.9
0.38
—
3.8
5
0.5
S
Vdc
Vdc
Vdc
V
(BR)DSS
I
GSS
I
DSS
65
—
—
—
—
—
—
1
10
Vdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
Power Output, 1 dB Compression Point
(V
DD
= 28 Vdc, CW, I
DQ
= 2
500 mA, f1 = 2170.0 MHz)
(1) Each side of device measured separately.
(2) Device measured in push–pull configuration.
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
MRF21120 MRF21120S
5.2–323
V
DD
+
C31
+
C30
C28
+
C17
C16
+
C15
R1
Z6
Z1
COAX1
Z2
COAX2
L1
Z5
C1
Z7
Z9
R2
C2
Z11
L2
Z13 C4 Z15 Z17 Z19
R6
Z21 Z23
Z25
Z27
Z29
Z31 Z33 Z35 C10 Z37
Z39
Z8
Z10
R5
Z12 C3 Z14 Z16 Z18
Z20 Z22
DUT
C13
C7
Z24
Z26
L3
Z28
Z30 Z32 Z34 C9 Z36
C14
C29
C27
C12
C5
Z40
Z41
L5
Z42
C32
C33
C34
+
C35
+
+
V
GG
+
C19
B1
R3
RF
OUTPUT
Z4
RF
INPUT
Z38
C8
COAX3
C11
COAX4
C6
+
V
GG
+
C25
R4
C24
C23
C21
B2
C22
C20
C37
+
C39
L4
+
C36
C38
V
DD
+
+
C43
C44
+
+
C40
B1, B2
C1, C2, C12
C3, C4, C9, C10
C5
C6, C7
C8
C11
C13, C20, C29, C37
C14, C21, C28, C38
C15, C22, C27, C34, C36, C42
C16, C23, C33, C43
C17, C24, C32, C41
C19, C25
C30, C39
C31, C40
C35, C44
Coax1, Coax2
Coax3, Coax4
L1, L5
L2
L3, L4
R1, R2
R3, R4
R5, R6
Z1
Ferrite Beads, Fair Rite
0.6 – 4.5 pF Variable Capacitors, Johanson Gigatrim
10 pF Chip Capacitors, B Case, ATC
0.4 – 2.5 pF Variable Capacitor, Johanson Gigatrim
2.0 pF Chip Capacitors, B Case, ATC
0.5 pF Chip Capacitor, B Case, ATC
0.2 pF Chip Capacitor, B Case, ATC
5.1 pF Chip Capacitors, B Case, ATC
91 pF Chip Capacitors, B Case, ATC
22
µF,
35 V Tantalum Surface Mount Chip Capacitors, Kemet
0.039
µF
Chip Capacitors, B Case, ATC
1000 pF Chip Capacitors, B Case, ATC
0.022
µF
Chip Capacitors, B Case, ATC
1.0
µF,
35 V Tantalum Surface Mount Chip Capacitors, Kemet
100
µF,
50 V Electrolytic Capacitors, Sprague
470
µF,
63 V Electrolytic Capacitors, Sprague
25
Ω
Semi Rigid Coax, 70 mil OD, 1.05″ Long
50
Ω
Semi Rigid Coax, 85 mil OD, 1.05″ Long
5.0 nH Minispring Inductors, Coilcraft
8.0 nH Minispring Inductor, Coilcraft
7.15 nH Microspring Inductors, Coilcraft
1 kΩ, 1/4 W Fixed Metal Film Resistors, Dale
270
Ω,
1/8 W Fixed Film Chip Resistors, Dale
1.2 kΩ, 1/8 W Fixed Film Chip Resistors, Dale
0.150″ x 0.080″ Microstrip
Z2
Z4, Z5
Z6, Z7
Z8, Z9
Z10, Z11
Z12, Z13
Z14, Z15
Z16, Z17
Z18, Z19
Z20, Z21
Z22, Z23
Z24, Z25
Z26, Z27
Z28, Z29
Z30, Z31
Z32, Z33
Z34, Z35
Z36, Z37
Z38, Z39
Z40
Z41
Z42
Board Material
Connectors
C41
C42
0.320″ x 0.080″ Microstrip
1.050″ x 0.080″ Microstrip
0.120″ x 0.080″ Microstrip
0.140″ x 0.080″ Microstrip
0.610″ x 0.080″ Microstrip
0.135″ x 0.080″ Microstrip
0.130″ x 0.080″ Microstrip
0.300″ x 0.350″ Microstrip
0.150″ x 0.500″ Microstrip
0.075″ x 0.500″ Microstrip
0.330″ x 0.500″ Microstrip
0.100″ x 0.550″ Microstrip
0.175″ x 0.550″ Microstrip
0.045″ x 0.550″ Microstrip
0.190″ x 0.325″ Microstrip
0.080″ x 0.325″ Microstrip
0.515″ x 0.080″ Microstrip
0.020″ x 0.080″ Microstrip
0.565″ x 0.080″ Microstrip
0.100″ x 0.080″ Microstrip
0.470″ x 0.080″ Microstrip
0.100″ x 0.080″ Microstrip
0.03″ Teflon
®
,
ε
r
= 2.55 Copper
Clad, 2 oz. Cu
N–Type Panel Mount, Stripline
Figure 1. 2.1 – 2.2 GHz Broadband Test Circuit Schematic
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
MRF21120 MRF21120S
5.2–325
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