MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF21120/D
The RF Sub - Micron MOSFET Line
RF Power Field Effect Transistor
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
•
W - CDMA Performance @ - 45 dBc, 5 MHz Offset, 15 DTCH, 1 Perch
Output Power — 14 Watts (Avg.)
Power Gain — 11.5 dB
Efficiency — 16%
•
Internally Matched, Controlled Q, for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2170 MHz, 120 Watts (CW)
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
N - Channel Enhancement - Mode Lateral MOSFET
MRF21120R6
2170 MHz, 120 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFET
Freescale Semiconductor, Inc...
CASE 375D - 04, STYLE 1
NI - 1230
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
- 0.5, +15
389
2.22
- 65 to +150
200
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
0.45
Unit
°C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M3 (Minimum)
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 9
MOTOROLA RF
Motorola, Inc. 2004
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF21120R6
1
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
(1)
Drain - Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 20
µAdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc )
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
ON CHARACTERISTICS
(1)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
Gate Threshold Voltage
(V
DS
= 10 V, I
D
= 200
µA)
g
fs
V
GS(th)
V
GS(Q)
V
DS(on)
—
2.5
3
—
4.8
3
3.9
0.38
—
3.8
5
0.5
S
Vdc
Vdc
Vdc
V
(BR)DSS
I
GSS
I
DSS
65
—
—
—
—
—
—
1
10
Vdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
Freescale Semiconductor, Inc...
Gate Quiescent Voltage
(V
DS
= 28 V, I
D
= 500 mA)
Drain - Source On - Voltage
(V
GS
= 10 V, I
D
= 2 A)
DYNAMIC CHARACTERISTICS
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system) (2)
Common - Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 120 W PEP, I
DQ
= 2
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 120 W PEP, I
DQ
= 2
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 120 W PEP, I
DQ
= 2
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 120 W PEP, I
DQ
= 2
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Common - Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 120 W PEP, I
DQ
= 2
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
Common - Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 120 W PEP, I
DQ
= 2
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 120 W PEP, I
DQ
= 2
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 120 W PEP, I
DQ
= 2
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 120 W PEP, I
DQ
= 2
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
500 mA,
C
rss
—
2.8
—
pF
G
ps
dB
10.5
30
11.4
34.5
—
—
%
500 mA,
η
IMD
500 mA,
IRL
500 mA,
G
ps
—
11.5
—
—
—
- 31
- 12
- 28
-9
dB
dB
dB
500 mA,
500 mA,
G
ps
—
11.5
—
dB
500 mA,
η
—
34.5
—
%
IMD
500 mA,
IRL
500 mA,
P1dB
—
- 31
—
dB
—
- 12
—
dB
Power Output, 1 dB Compression Point
(V
DD
= 28 Vdc, CW, I
DQ
= 2
500 mA, f1 = 2170.0 MHz)
(1) Each side of device measured separately.
(2) Device measured in push - pull configuration.
—
120
—
Watts
MRF21120R6
2
For More Information On This Product,
Go to: www.freescale.com
MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS — continued
(T
C
= 25°C unless otherwise noted)
Characteristic
Common - Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 120 W CW, I
DQ
= 2
f1 = 2170.0 MHz)
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 120 W CW, I
DQ
= 2
f1 = 2170.0 MHz)
Symbol
G
ps
Min
—
Typ
10.5
Max
—
Unit
dB
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system) (2) (continued)
500 mA,
500 mA,
η
—
42
—
%
Output Mismatch Stress
(V
DD
= 28 Vdc, P
out
= 120 W CW, I
DQ
= 2
500 mA,
f = 2.17 GHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
(2) Device measured in push - pull configuration.
Ψ
No Degradation In Output Power
Before and After Test
Freescale Semiconductor, Inc...
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF21120R6
3
Freescale Semiconductor, Inc.
V
DD
+
C31
+
C30
C28
+
C17
C16
+
C15
C13
C7
Z24
Z20 Z22
Z38
Z1
COAX1
Z2
COAX2
L1
Z5
Z7
C1
Z9
R2
C2
Z11
L2
Z13 C4 Z15 Z17 Z19
Z21 Z23
Z25
R6
C6
+
V
GG
+
C25
R4
C24
C23
C21
+
C40
B1, B2
C1, C2, C12
C3, C4, C9, C10
C5
C6, C7
C8
C11
C13, C20, C29, C37
C14, C21, C28, C38
C15, C22, C27, C34, C36, C42
C16, C23, C33, C43
C17, C24, C32, C41
C19, C25
C30, C39
C31, C40
C35, C44
Coax1, Coax2
Coax3, Coax4
L1, L5
L2
L3, L4
R1, R2
R3, R4
R5, R6
Z1
Ferrite Beads, Fair Rite
0.6 - 4.5 pF Variable Capacitors, Johanson Gigatrim
10 pF Chip Capacitors, B Case, ATC
0.4 - 2.5 pF Variable Capacitor, Johanson Gigatrim
2.0 pF Chip Capacitors, B Case, ATC
0.5 pF Chip Capacitor, B Case, ATC
0.2 pF Chip Capacitor, B Case, ATC
5.1 pF Chip Capacitors, B Case, ATC
91 pF Chip Capacitors, B Case, ATC
22
µF,
35 V Tantalum Surface Mount Chip Capacitors, Kemet
0.039
µF
Chip Capacitors, B Case, ATC
1000 pF Chip Capacitors, B Case, ATC
0.022
µF
Chip Capacitors, B Case, ATC
1.0
µF,
35 V Tantalum Surface Mount Chip Capacitors, Kemet
100
µF,
50 V Electrolytic Capacitors, Sprague
470
µF,
63 V Electrolytic Capacitors, Sprague
25
Ω
Semi Rigid Coax, 70 mil OD, 1.05″ Long
50
Ω
Semi Rigid Coax, 85 mil OD, 1.05″ Long
5.0 nH Minispring Inductors, Coilcraft
8.0 nH Minispring Inductor, Coilcraft
7.15 nH Microspring Inductors, Coilcraft
1 kΩ, 1/4 W Fixed Metal Film Resistors, Dale
270
Ω,
1/8 W Fixed Film Chip Resistors, Dale
1.2 kΩ, 1/8 W Fixed Film Chip Resistors, Dale
0.150″ x 0.080″ Microstrip
Z2
Z4, Z5
Z6, Z7
Z8, Z9
Z10, Z11
Z12, Z13
Z14, Z15
Z16, Z17
Z18, Z19
Z20, Z21
Z22, Z23
Z24, Z25
Z26, Z27
Z28, Z29
Z30, Z31
Z32, Z33
Z34, Z35
Z36, Z37
Z38, Z39
Z40
Z41
Z42
Board Material
Connectors
+
+
C32
C33
C34
C35
+
V
GG
+
B1
L5
Z40
Z41
Z42
RF
OUTPUT
C12
C5
C19
R3
C14
C29
C27
L3
Z26
Z28
Z30 Z32 Z34 C9 Z36
Z4
Z6
R1
Z8
Z10
R5
Z12 C3 Z14 Z16 Z18
Freescale Semiconductor, Inc...
RF
INPUT
DUT
C8
C11
COAX3
COAX4
Z27
Z29
Z31 Z33 Z35 C10 Z37
Z39
L4
+
C37
+
C39
C38
V
DD
+
C41
C42
C43
C44
+
+
C36
B2
C22
C20
0.320″ x 0.080″ Microstrip
1.050″ x 0.080″ Microstrip
0.120″ x 0.080″ Microstrip
0.140″ x 0.080″ Microstrip
0.610″ x 0.080″ Microstrip
0.135″ x 0.080″ Microstrip
0.130″ x 0.080″ Microstrip
0.300″ x 0.350″ Microstrip
0.150″ x 0.500″ Microstrip
0.075″ x 0.500″ Microstrip
0.330″ x 0.500″ Microstrip
0.100″ x 0.550″ Microstrip
0.175″ x 0.550″ Microstrip
0.045″ x 0.550″ Microstrip
0.190″ x 0.325″ Microstrip
0.080″ x 0.325″ Microstrip
0.515″ x 0.080″ Microstrip
0.020″ x 0.080″ Microstrip
0.565″ x 0.080″ Microstrip
0.100″ x 0.080″ Microstrip
0.470″ x 0.080″ Microstrip
0.100″ x 0.080″ Microstrip
0.03″ Teflon
,
ε
r
= 2.55 Copper
Clad, 2 oz. Cu
N -Type Panel Mount, Stripline
Figure 1. 2.1 - 2.2 GHz Broadband Test Circuit Schematic
MRF21120R6
4
For More Information On This Product,
Go to: www.freescale.com
MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
C34
226
35K
649
C35
C19
226
35K
649
V
GG
C15
C17
C30
640
50K
105
C31
C32 C33
C28
C27
V
DD
B1
R3
R5
R1
C1 C2
L2
C4
C3
C13
C7
L3
L5
C8
C9
C11
C10
C12
R6
C6
C20
226
35K
649
Freescale Semiconductor, Inc...
L1
R2
L4
226
35K
649
C16
C14
C29
C5
R4
B2
C23
V
GG
C25
C24
C36
226
35K
649
C37
C21
C22
C39
C38
C40
226
35K
649
640
50K
105
C41 C43
V
DD
C42
C44
Figure 2. 2.1 - 2.2 GHz Broadband Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF21120R6
5
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