Freescale Semiconductor
Technical Data
Document Number: MRF21090
Rev. 8, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications.
•
Typical W - CDMA Performance for 2140 MHz, 28 Volts
4.096 MHz BW @ 5 MHz offset, 1 PERCH 15 DTCH:
Output Power — 11.5 Watts
Efficiency — 16%
Gain — 12.2 dB
ACPR — - 45 dBc
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW
Output Power
Features
•
Internally Matched for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF21090R3
MRF21090SR3
2110 - 2170 MHz, 90 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF21090R3
CASE 465C - 02, STYLE 1
NI - 880S
MRF21090SR3
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
Value
- 0.5, +65
- 0.5, +15
270
1.54
- 65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
0.65
Unit
°C/W
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF21090R3 MRF21090SR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
MRF21090R3
MRF21090SR3
MRF21090R3
MRF21090SR3
Class
2 (Minimum)
1 (Minimum)
M3 (Minimum)
M4 (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Drain- Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 100
μAdc)
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
On Characteristics
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 3 Adc)
Gate Threshold Voltage
(V
DS
= 10 V, I
D
= 300
μA)
Gate Quiescent Voltage
(V
DS
= 28 V, I
D
= 750 mA)
Drain- Source On - Voltage
(V
GS
= 10 V, I
D
= 1 A)
Dynamic Characteristics
Reverse Transfer Capacitance
(1)
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
Functional Tests
(In Freescale Test Fixture)
Common- Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 90 W PEP, I
DQ
= 750 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 90 W PEP, I
DQ
= 750 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 90 W PEP, I
DQ
= 750 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 90 W PEP, I
DQ
= 750 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Common- Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 75 W CW, I
DQ
= 750 mA, f = 2170 MHz)
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 75 W CW, I
DQ
= 750 mA, f = 2170 MHz)
1. Part is internally matched both on input and output.
G
ps
10
11.7
—
dB
C
rss
—
4.2
—
pF
g
fs
V
GS(th)
V
GS(Q)
V
DS(on)
—
2
3
—
7.2
3
3.8
0.1
—
4
5
0.6
S
Vdc
Vdc
Vdc
V
(BR)DSS
I
GSS
I
DSS
65
—
—
—
—
—
—
1
10
Vdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
η
30
33
—
%
IMD
—
- 30
- 27.5
dBc
IRL
—
- 12
- 9.0
dB
G
ps
η
—
—
11.7
41
—
—
dB
%
MRF21090R3 MRF21090SR3
2
RF Device Data
Freescale Semiconductor
R2
B1
VGG
+
C1
+
C2
C3
C4
R1
Z11
+
C7
C8
C9
+
C10
C11
+
C13
V DD
RF OUTPUT
Z10
RF INPUT
Z1
C5
C6
Z2
Z3
Z4
Z5
DUT
Z6
Z7
Z8
C12
C14
Z9
B1
C1, C13
C2, C10
C3, C9
C4, C8
C5, C12
C6
C7
C11
C14
R1
R2
Z1
Z2
Z3
Z4
Z5
Z6
Ferrite Bead, Fair Rite #2743019447
470
μF,
50 V Electrolytic Capacitors
22
μF,
35 V Tantalum Surface Mount Chip
Capacitors, Kemet
20 nF Chip Capacitors, ATC #100B203MCA500X
5.1 pF Chip Capacitors, ATC #100B5R1CCA500X
0.4 - 2.5 pF Variable Capacitors, Johanson Gigatrim
10 pF Chip Capacitor, ATC #100B100JCA500X
1
mF,
35 V Tantalum Surface Mount Chip Capacitor,
Kemet
1 nF Chip Capacitor, ATC #100B102JCA500X
8.2 pF Chip Capacitor, ATC #100B8R2CCA500X
13
Ω,
1/4 W Chip Resistor,
Garret Instrument #RM73B2B130JT,
12
Ω,
1/4 W Chip Resistor,
Garret Instrument #RM73B2B120JT
30.7 x 2.09 mm Microstrip
5.99 x 2.09 mm Microstrip
7.55 x 9.89 mm Microstrip
3.77 x 15.71 mm Microstrip
6.89 x 26.17 mm Microstrip
14.93 x 32.05 mm Microstrip
Z7
Z8
Z9
Z10
Z11
WS1, WS2
10.23 x 2.09 mm Microstrip
6.03 x 2.09 mm Microstrip
23.98 x 2.09 mm Microstrip
29.82 x 1.15 mm Microstrip
17.08 x 1.15 mm Microstrip
Beryllium Copper Wear Blocks 5 mils Thick
Brass Banana Jack and Nut
Red Banana Jack and Nut
Green Banana Jack and Nut
Type N Jack Connectors, 3052 - 1648- 10,
Omni Specra
4 - 40 Head Screws 0.125″ Long
4 - 40 Head Screws 0.188″ Long
4 - 40 Head Screws 0.312″ Long
4 - 40 Head Screws 0.438″ Long
Endplates Brass Endplates for Copper Bedstead
Bedstead
Copper Bedstead/Heatsink
Insert
Copper Bedstead Insert
Raw PCB
0.030″ Glass Teflon
®
, 2 oz Copper Clad
3″ x 5″ Arion
RF Circuit
3″ x 5″ Copper Clad PCB Teflon
®
,
MRF21090, CMR
Figure 1. MRF21090R3(SR3) Test Circuit Schematic
C7 C8
Gate
Bias
Feed
C3 C4
C1
C2
C6
C5
C
U
T
O
U
T
B1
Drain
Bias
Feed
R1
R2
C9
C11
C10
C13
C14
C12
MRF21090
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale
Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the
transition period. These changes will have no impact on form, fit or function of the current product.
Figure 2. MRF21090R3(SR3) Test Circuit Component Layout
MRF21090R3 MRF21090SR3
RF Device Data
Freescale Semiconductor
3
TYPICAL PERFORMANCE (IN FREESCALE TEST FIXTURE)
η
, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB
60
IRL
−5
−10
−15
η
V
DD
= 28 Vdc
P
out
= 90 W (PEP)
I
DQ
= 750 mA
Two−Tone Measurement
100 kHz Tone Spacing
−20
−25
−30
IMD
0
−35
2080
2100
2120
2140
2160
f, FREQUENCY (MHz)
2180
2200
η
, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
30
V
DD
= 28 Vdc
I
DQ
= 1000 mA
f = 2140 MHz
Channel Spacing (Channel Bandwidth):
4.096 MHz (5 MHz)
ACPR
15
G
ps
η
0
5.0
10
15
20
−50
−20
ADJACENT CHANNEL POWER RATIO (dB)
IMD, INTERMODULATION DISTORTION (dBc)
50
25
−30
40
30
20
−40
20
G
ps
10
10
5
−60
−70
P
out
, OUTPUT POWER (WATTS) AVG.
Figure 3. Class AB Broadband Circuit
Performance
Figure 4. CDMA ACPR, Power Gain and Drain
Efficiency versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
V
DD
= 28 Vdc
f = 2140 MHz
−30 Two−Tone Measurement
100 kHz Tone Spacing
−35
−40
−45
−50
−55
IMD, INTERMODULATION DISTORTION (dBc)
−25
−20
−30
−40
−50
−60
−70
−80
V
DD
= 28 Vdc
I
DQ
= 750 mA
f = 2140 MHz
Two−Tone Measurement
100 kHz Tone Spacing
500 mA
2000 mA
1500 mA
3rd Order
5th Order
7th Order
800 mA
1000 mA
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
Figure 5. Intermodulation Distortion versus
Output Power
Figure 6. Intermodulation Distortion Products
versus Output Power
15
V
DD
= 28 Vdc
f = 2140 MHz
Two−Tone Measurement
100 kHz Tone Spacing
11.8
11.6
G ps, POWER GAIN (dB)
11.4
11.2
11.0
10.8
500 mA
IMD
100
10.6
20
22
24
26
28
30
V
DS
, DRAIN VOLTAGE (VOLTS)
32
34
P
out
= 90 W (PEP)
I
DQ
= 750 mA
f = 2140 MHz
Two−Tone Measurement
100 kHz Tone Spacing
Fixture Tuned for 28 Volts
−22
−24
−26
−28
−30
−32
−34
14
G ps, POWER GAIN (dB)
2000 mA
1500 mA
13
12
1000 mA
800 mA
G
ps
11
10
1
10
P
out
, OUTPUT POWER (WATTS) PEP
Figure 7. Power Gain versus Output Power
MRF21090R3 MRF21090SR3
4
Figure 8. Power Gain and Intermodulation
Distortion versus Supply Voltage
RF Device Data
Freescale Semiconductor
Z
o
= 5
Ω
f = 2170 MHz
Z
load
f = 2110 MHz
2110 MHz
Z
source
2170 MHz
V
DD
= 28 V, I
DQ
= 750 mA, P
out
= 90 W (PEP)
f
MHz
2110
2140
2170
Z
source
Ω
3.03 - j3.40
3.02 - j3.46
2.60 - j3.50
Z
load
Ω
0.92 - j1.67
0.97 - j1.80
0.90 - j1.52
Z
source
= Test circuit impedance as measured from
gate to ground.
Z
load
= Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MRF21090R3 MRF21090SR3
RF Device Data
Freescale Semiconductor
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
