MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF18060B/D
The RF MOSFET Line
RF Power Field Effect Transistors
Designed for PCN and PCS base station applications with frequencies from
1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications. Specified for GSM1930 - 1990 MHz.
•
GSM Performance, Full Frequency Band (1930 - 1990 MHz)
Power Gain — 13 dB (Typ) @ 60 Watts CW
Efficiency — 45% (Typ) @ 60 Watts CW
•
Internally Matched, Controlled Q, for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Watts CW Output Power
•
Excellent Thermal Stability
•
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40
µ″
Nominal.
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
N - Channel Enhancement - Mode Lateral MOSFETs
MRF18060BR3
MRF18060BSR3
MRF18060BLSR3
1.90 - 1.99 GHz, 60 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
Freescale Semiconductor, Inc...
CASE 465 - 06, STYLE 1
NI - 780
MRF18060BR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF18060BSR3, MRF18060BLSR3
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
- 0.5, +15
180
1.03
- 65 to +150
200
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
0.97
Unit
°C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
2 (Minimum)
M3 (Minimum)
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 5
MOTOROLA RF
Motorola, Inc. 2004
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF18060BR3 MRF18060BSR3 MRF18060BLSR3
1
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain - Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 10
µAdc)
Zero Gate Voltage Drain Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 300
µAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 500 mAdc)
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2
2.5
—
—
—
3.9
0.27
4.7
4
4.5
—
—
Vdc
Vdc
Vdc
S
V
(BR)DSS
I
DSS
I
GSS
65
—
—
—
—
—
—
6
1
Vdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
Freescale Semiconductor, Inc...
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance (Including Input Matching Capacitor in Package) (1)
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance (1)
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system)
Common - Source Amplifier Power Gain @ 60 W (2)
(V
DD
= 26 Vdc, I
DQ
= 500 mA, f = 1930 - 1990 MHz)
Drain Efficiency @ 60 W (2)
(V
DD
= 26 Vdc, I
DQ
= 500 mA, f = 1930 - 1990 MHz)
Input Return Loss (2)
(V
DD
= 26 Vdc, P
out
= 60 W CW, I
DQ
= 500 mA,
f = 1930 - 1990 MHz)
Output Mismatch Stress
(V
DD
= 26 Vdc, P
out
= 60 W CW, I
DQ
= 500 mA VSWR = 10:1,
All Phase Angles at Frequency of Tests)
C
iss
C
oss
C
rss
—
—
—
160
740
2.7
—
—
—
pF
pF
pF
G
ps
η
IRL
dB
11.5
40
—
13
45
—
—
%
—
dB
- 10
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
(2) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1900 band, ensuring batch - to - batch
consistency.
MRF18060BR3 MRF18060BSR3 MRF18060BLSR3
MOTOROLA RF DEVICE DATA
For More Information On This Product,
2
Go to: www.freescale.com
Freescale Semiconductor, Inc.
Z5
V
DD
V
GG
R1
R2
C1
R3
RF
INPUT
C9
Z1
C4
Z2
C5
Z3
DUT
C7
Z4
C6
Z6
C8
Z7
C3
+
C2
RF
OUTPUT
Freescale Semiconductor, Inc...
C1, C3
C2
C4, C8
C5
C6
C7, C9
R1, R2
R3
10 pF, 100B Chip Capacitors
10
mF,
35 V Electrolytic Tantalum Capacitor
1.2 pF, 100B Chip Capacitors
1.0 pF, 100B Chip Capacitor
2.2 pF, 100B Chip Capacitor
0.3 pF, 100B Chip Capacitors
10 kΩ Chip Resistors (0805)
1.0 kΩ Chip Resistor (0805)
Z1
Z2
Z3
Z4
Z5
Z6
Z7
PCB
0.60″ x 0.09″ Microstrip
1.00″ x 0.09″ Microstrip
0.51″ x 0.94″ Microstrip
0.59″ x 0.98″ Microstrip
0.79″ x 0.09″ Microstrip
1.38″ x 0.09″ Microstrip
0.79″ x 0.09″ Microstrip
Teflon
Glass
Figure 1. 1930 - 1990 MHz Test Fixture Schematic
VBIAS
R1
C1
R2
C9
C4
R3
C6
C5
C2
VSUPPLY
C3
C7
C8
Ground
MRF18060
Ground
Figure 2. 1930 - 1990 MHz Test Fixture Component Layout
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF18060BR3 MRF18060BSR3 MRF18060BLSR3
3
Freescale Semiconductor, Inc.
V
bias
C1
R3
T2
R4
R6
RF
INPUT
C3
Freescale Semiconductor, Inc...
R2
R3
R4
C7
C8
C6
MRF18060
Figure 4. 1800 - 2000 MHz Demo Board Component Layout
MRF18060BR3 MRF18060BSR3 MRF18060BLSR3
MOTOROLA RF DEVICE DATA
For More Information On This Product,
4
Go to: www.freescale.com
Î Î
ÎÎÎ
Î
ÎÎÎ
ÎÎÎ
Î
Î
ÎÎÎ
ÎÎÎ
ÎÎ
Î
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎÎ
Î
ÎÎÎ
ÎÎÎ
ÎÎÎ
T1
T1
C1
C2
C3, C5, C8
C4
C6
C7
R1
R2, R6
R3
R4
R5
C1
R1
R2
R5
V
supply
C2
C4
+
C5
Z1
C6
Z2
C7
Z3
Z6
Z4
Z5
C8
Z7
RF
OUTPUT
1
mF
Chip Capacitor (0805)
100 nF Chip Capacitor (0805)
10 pF Chip Capacitors, ACCU - P (0805)
10
mF,
35 V Tantalum Electrolytic Capacitor
1.8 pF Chip Capacitor, ACCU - P (0805)
1 pF Chip Capacitor, ACCU - P (0805)
10
Ω
Chip Resistor (0805)
1 kΩ Chip Resistors (0805)
1.2 kΩ Chip Resistor (0805)
2.2 kΩ Chip Resistor (0805)
5 kΩ, SMD Potentiometer
T1
LP2951 Micro - 8 Voltage Regulator
T2
BC847 SOT - 23 NPN Transistor
Z1
0.159″ x 0.055″ Microstrip
Z2
0.982″ x 0.055″ Microstrip
Z3
0.087″ x 0.055″ Microstrip
Z4
0.512″ x 0.787″ Microstrip
Z5
0.433″ x 1.220″ Microstrip
Z6
1.039″ x 0.118″ Microstrip
Z7
0.268″ x 0.055″ Microstrip
Substrate = 0.5 mm Teflon
Glass,
ε
r
= 2.55
Figure 3. 1800 - 2000 MHz Demo Board Schematic
V
bias
Ground
V
supply
R1
T1
C4
T2
R5
C2
C3
R6
MRF18060
C5
Î
Î
Î
ÎÎÎÎ
Î
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS (DATA TAKEN USING WIDEBAND DEMONSTRATION BOARD)
16
Pout , OUTPUT POWER (WATTS)
15
G ps, POWER GAIN (dB)
14
13
500 mA
12
11 300 mA
10
9
8
1
10
P
out
, OUTPUT POWER (WATTS)
100
100 mA
V
DD
= 26 Vdc
f = 1880 MHz
I
DQ
= 750 mA
100
90
80
70
60
50
40
30
20
10
0
18
20
V
DD
= 26 Vdc
I
DQ
= 500 mA
22
24
26
V
DD
, SUPPLY VOLTAGE (VOLTS)
28
30
1W
2.5 W
P
in
= 5 W
Freescale Semiconductor, Inc...
Figure 5. Power Gain versus
Output Power
Figure 6. Output Power versus Supply Voltage
90
Pout , OUTPUT POWER (WATTS)
80
70
3W
60
50
40
30
20
10
0
1800
1820
1840
1860
f, FREQUENCY (MHz)
1880
1900
1W
0.5 W
V
DD
= 26 Vdc
I
DQ
= 500 mA
P
in
= 6 W
Pout , OUTPUT POWER (WATTS)
90
80
70
60
50
40
30
20
10
0
0
1
2
3
4
P
in
, INPUT POWER (WATTS)
5
6
V
DD
= 26 Vdc
I
DQ
= 500 mA
f = 1880 MHz
h
P
out
60
55
η
, DRAIN EFFICIENCY (%)
50
45
40
35
30
25
20
15
Figure 7. Output Power versus Frequency
Figure 8. Output Power and Efficiency
versus Input Power
0
−2
G
ps
−4
−6
−8
−10
−12
−14
IRL
V
DD
= 26 Vdc
I
DQ
= 500 mA
2000
2100
−16
−18
−20
IRL, INPUT RETURN LOSS (dB)
15.0
14.5
14.0
G ps, POWER GAIN (dB)
13.5
13.0
12.5
12.0
11.5
11.0
10.5
10.0
1700
1800
1900
f, FREQUENCY (MHz)
Figure 9. Wideband Gain and IRL
(at Small Signal)
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF18060BR3 MRF18060BSR3 MRF18060BLSR3
5
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