Power Bipolar Transistor, 2A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
参数名称 | 属性值 |
厂商名称 | SAMSUNG(三星) |
零件包装代码 | SFM |
包装说明 | FLANGE MOUNT, R-PSFM-T3 |
针数 | 3 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
最大集电极电流 (IC) | 2 A |
集电极-发射极最大电压 | 150 V |
配置 | SINGLE |
最小直流电流增益 (hFE) | 40 |
JEDEC-95代码 | TO-220AB |
JESD-30 代码 | R-PSFM-T3 |
元件数量 | 1 |
端子数量 | 3 |
最高工作温度 | 150 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | FLANGE MOUNT |
极性/信道类型 | PNP |
功耗环境最大值 | 25 W |
认证状态 | Not Qualified |
表面贴装 | NO |
端子形式 | THROUGH-HOLE |
端子位置 | SINGLE |
晶体管应用 | AMPLIFIER |
晶体管元件材料 | SILICON |
标称过渡频率 (fT) | 5 MHz |
VCEsat-Max | 1 V |
KSB546-R | KSB546-Y | KSB546-O | |
---|---|---|---|
描述 | Power Bipolar Transistor, 2A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | Power Bipolar Transistor, 2A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | Power Bipolar Transistor, 2A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN |
厂商名称 | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) |
零件包装代码 | SFM | SFM | SFM |
包装说明 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
针数 | 3 | 3 | 3 |
Reach Compliance Code | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 |
最大集电极电流 (IC) | 2 A | 2 A | 2 A |
集电极-发射极最大电压 | 150 V | 150 V | 150 V |
配置 | SINGLE | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 40 | 120 | 70 |
JEDEC-95代码 | TO-220AB | TO-220AB | TO-220AB |
JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
元件数量 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 |
最高工作温度 | 150 °C | 150 °C | 150 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
极性/信道类型 | PNP | PNP | PNP |
功耗环境最大值 | 25 W | 25 W | 25 W |
认证状态 | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | NO |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | SINGLE | SINGLE | SINGLE |
晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER |
晶体管元件材料 | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | 5 MHz | 5 MHz | 5 MHz |
VCEsat-Max | 1 V | 1 V | 1 V |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved