Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon,
| 参数名称 | 属性值 |
| 厂商名称 | Galaxy Microelectronics |
| 包装说明 | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | unknown |
| 其他特性 | LOW NOISE |
| 最大集电极电流 (IC) | 0.2 A |
| 集电极-发射极最大电压 | 45 V |
| 配置 | SINGLE |
| 最小直流电流增益 (hFE) | 70 |
| JESD-30 代码 | R-PDSO-G3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 极性/信道类型 | NPN |
| 表面贴装 | YES |
| 端子形式 | GULL WING |
| 端子位置 | DUAL |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 250 MHz |
| 类别 | |
| 极性 | NPN |
| V(BR)CEO (V) min. | 45 |
| IC (A) | 0.1 |
| hFE min | 180 |
| hFE max | 310 |
| Condition1_VCE (V) | 5 |
| Condition1_IC (mA) | 2 |
| VCE (sat) (V) | 0.55 |
| Condition2_IC (mA) | 50 |
| Condition2_IB (mA) | 1.25 |
| fT (MHz) min. | 250(typ) |
| PD (W) max. | 0.35 |
| AEC Qualified | No |
| 最高工作温度 | 150 |
| 最低工作温度 | -65 |
| 是否无铅 | Yes |
| 符合Reach | Yes |
| 符合RoHS | Yes |
| ECCN代码 | EAR99 |
| Package Outlines | SOT-23 |
| BCX70H | BCX70J | BCX70G | BCX70K | |
|---|---|---|---|---|
| 描述 | Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, | 45V,0.1A,General Purpose NPN Bipolar Transistor, Diodes, NPN, 45V, 0.1A, 250, 460, 5V | 45V,0.1A,General Purpose NPN Bipolar Transistor, Diodes, NPN, 45V, 0.1A, 120, 220, 5V | 45V,0.1A,General Purpose NPN Bipolar Transistor, Diodes, NPN, 45V, 0.1A, 380, 630, 5V |
| 厂商名称 | Galaxy Microelectronics | Galaxy Microelectronics | Galaxy Microelectronics | Galaxy Microelectronics |
| 包装说明 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| 其他特性 | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE |
| 最大集电极电流 (IC) | 0.2 A | 0.2 A | 0.2 A | 0.2 A |
| 集电极-发射极最大电压 | 45 V | 45 V | 45 V | 45 V |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE |
| 最小直流电流增益 (hFE) | 70 | 90 | 50 | 100 |
| JESD-30 代码 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
| 元件数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 极性/信道类型 | NPN | NPN | NPN | NPN |
| 表面贴装 | YES | YES | YES | YES |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING |
| 端子位置 | DUAL | DUAL | DUAL | DUAL |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 250 MHz | 250 MHz | 250 MHz | 250 MHz |
| 极性 | NPN | NPN | NPN | NPN |
| V(BR)CEO (V) min. | 45 | 45 | 45 | 45 |
| IC (A) | 0.1 | 0.1 | 0.1 | 0.1 |
| hFE min | 180 | 250 | 120 | 380 |
| hFE max | 310 | 460 | 220 | 630 |
| Condition1_VCE (V) | 5 | 5 | 5 | 5 |
| Condition1_IC (mA) | 2 | 2 | 2 | 2 |
| VCE (sat) (V) | 0.55 | 0.55 | 0.55 | 0.55 |
| Condition2_IC (mA) | 50 | 50 | 50 | 50 |
| Condition2_IB (mA) | 1.25 | 1.25 | 1.25 | 1.25 |
| fT (MHz) min. | 250(typ) | 250(typ) | 250(typ) | 250(typ) |
| PD (W) max. | 0.35 | 0.35 | 0.35 | 0.35 |
| AEC Qualified | No | No | No | No |
| 最高工作温度 | 150 | 150 | 150 | 150 |
| 最低工作温度 | -65 | -65 | -65 | -65 |
| 是否无铅 | Yes | Yes | Yes | Yes |
| 符合Reach | Yes | Yes | Yes | Yes |
| 符合RoHS | Yes | Yes | Yes | Yes |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
| Package Outlines | SOT-23 | SOT-23 | SOT-23 | SOT-23 |
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