20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MJ11028, MJ11030,
MJ11032 (NPN)
MJ11029, MJ11033 (PNP)
High-Current
Complementary Silicon
Power Transistors
High-Current Complementary Silicon Power Transistors are for use
as output devices in complementary general purpose amplifier
applications.
Features
50 AMPERE
COMPLEMENTARY
DARLINGTON POWER
TRANSISTORS
60-120 VOLTS
300 WATTS
NPN
COLLECTOR
CASE
PNP
• High DC Current Gain - h
FE
= 1000 (Min) @ I
c
= 25 Adc
h
FE
= 400 (Min) @ I
c
= 50 Adc
• Curves to 100 A (Pulsed)
• Diode Protection to Rated Ic
• Monolithic Construction with Built-in Base-Emitter Shunt Resistor
• Junction Temperature to+200°C
COLLECTOR
CASE
MAXIMUM RATINGS
(Tj = 25°C unless otherwise noted)
Rating
Collector-Emitter Voltage
MJ11028/29
MJ11030
MJ 11 032/33
Symbol
VCEO
Value
60
90
120
60
90
120
5.0
Unit
Vdc
EMITTER 2
MJ11028
MJ11030
MJ11032
EMITTER 2
MJ11029
MJ11033
Collector-Base Voltage
MJ 1 1 028/29 VCBO
MJ11030
MJ 11 032/33
VEBO
Ic
IB
PD
Tj, T
st
g
Vdc
Emitter-Base Voltage
Collector Current - Continuous
-Peak (Note 1)
Base Current - Continuous
Total Power Dissipation @ T
c
= 25°C
Derate Above 25°C @ T
c
= 100°C
Operating and Storage Junction
Temperature Range
Vdc
Adc
Adc
W
W/°C
50
100
2.0
300
1.71
-55 to +200
nro-3)
°c
THERMAL CHARACTERISTICS
Characteristic
Maximum Lead Temperature for
Soldering Purposes for < 10 seconds
Thermal Resistance, Junction-to-Case
Symbol
T
L
Max
275
Unit
°C
0.58
°c/w
Rejc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions).and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5 us, Duty Cycle < 10%.
Quality Semi-Conductors
MJ11028, MJ11030, MJ11032 (NPN)
PNP
MJ11029
MJ11033
NPN
MJ11028
MJ11030
MJ11032
BASE
BASE
1'.
I
Figure 1. Darlington Circuit Schematic
ELECTRICAL CHARACTERISTICS
(T
c
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Note 1)
(l
c
= 1 00 mAdc, IB = 0)
Collector-Emitter Leakage Current
(V
CE
= 60 Vdc, R
BE
= 1 kQ)
(V
CE
= 90 Vdc, RBE = 1 kQ)
(V
CE
= 120 Vdc, RBE = 1 kQ)
(V
CE
= 60 Vdc, RBE = 1
kQ,
T
c
= 150°C)
(V
CE
= 120 Vdc, RBE = 1 k£2, T
c
= 150°C)
Emitter Cutoff Current
(V
BE
= 5 Vdc, l
c
= 0)
Collector-Emitter Leakage Current
(V
CE
= 50 Vdc, I
B
= 0)
ON CHARACTERISTICS
(Note 1)
DC Current Gain
(l
c
= 25 Adc, V
CE
= 5 Vdc)
(l
c
= 50 Adc, V
CE
= 5 Vdc)
Collector-Emitter Saturation Voltage
(l
c
= 25 Adc, IB = 250 mAdc)
(l
c
= 50 Adc, IB = 500 mAdc)
Base-Emitter Saturation Voltage
(l
c
= 25 Adc, I
B
= 200 mAdc)
(l
c
= 50 Adc, IB = 300 mAdc)
1. Pulse Test: Pulse Width < 300 |is, Duty Cycle < 2.0%.
HFE
1k
400
V
CE(sat)
_
~
Symbol
Min
60
90
120
| Max
Unit
MJ11028, MJ11029
M J 1 1 030
MJ11032, MJ11033
M J 1 1 028, MJ 1 1 029
M J 1 1 030
MJ11032, MJ11033
MJ11028, MJ11029
MJ11032, MJ11033
V
(BR)CEO
Vdc
':
mAdc
2
2
2
10
10
ICER
-
IEBO
mAdc
-
-
5
'CEO
mAdc
2
18k
Vdc
2.5
3.5
Vdc
3.0
4.5
V
BE(sat)
-
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