Datasheet> 器件分类 > 分立半导体> 晶体管> MJE18206AJ

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MJE18206AJ: 产品描述8A, 600V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN; 产品类别分立半导体晶体管; 文件大小543KB，共67页; 制造商ON Semiconductor(安森美); 官网地址http://www.onsemi.cn

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MJE18206AJ概述

8A, 600V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

MJE18206AJ规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	ON Semiconductor(安森美)
零件包装代码	TO-220AB
包装说明	PLASTIC, TO-220AB, 3 PIN
针数	3
Reach Compliance Code	compliant
ECCN代码	EAR99
外壳连接	COLLECTOR
最大集电极电流 (IC)	8 A
集电极-发射极最大电压	600 V
配置	SINGLE
最小直流电流增益 (hFE)	5
JESD-30 代码	R-PSFM-T3
JESD-609代码	e0
元件数量	1
端子数量	3
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	NPN
认证状态	Not Qualified
表面贴装	NO
端子面层	TIN LEAD
端子形式	THROUGH-HOLE
端子位置	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	13 MHz

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

™

Data Sheet

SWITCHMODE

™

NPN

Designer's

Bipolar

Power Transistor for Electronic

Light Ballast and Switching

Power Supply Applications

The MJE/MJF18206 have an application specific state–of–the–art die dedicated to

the electronic ballast (“light ballast”) and power supply applications.

•

Improved Global Efficiency Due to Low Base Drive Requirements:

— High and Flat DC Current Gain hFE

— Fast Switching

— No Coil Required in Base Circuit for fast Turn–Off (No Current Tail)

•

Full Characterization at 125

•

Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible Parametric

Distributions

•

Two Package Choices: Standard TO–220 or Isolated TO–220

MJE18206

MJF18206

POWER TRANSISTORS

8 AMPERES

1200 VOLTS

40 and 100 WATTS

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MAXIMUM RATINGS

Rating

Symbol

VCEO

VCBO

VCES

MJE18206

MJF18206

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

600

1200

Collector–Emitter Voltage

Emitter–Base Voltage

VEBO

ICM

IBM

Collector Current — Continuous

— Peak (1)

Base Current — Continuous

— Peak (1)

RMS Isolation Voltage (2)

(for 1 sec, R.H.

≤

30%)

TC = 25°C

Per Figure 22

Per Figure 23

Per Figure 24

VISOL1

VISOL2

VISOL3

4500

3500

1500

0.32

Volts

*Total Device Dissipation @ TC = 25°C

*Derate above 25

Operating and Storage Temperature

100

0.8

Watt

TJ, Tstg

– 65 to 150

CASE 221A–06

TO–220AB

THERMAL CHARACTERISTICS

Rating

Symbol

θJC

θJA

MJE18206

1.25

62.5

MJF18206

3.125

62.5

Unit

Thermal Resistance — Junction to Case

— Junction to Ambient

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

C/W

260

CASE 221D–02

TO–220 FULLPACK

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

10%.

(2) Proper strike and creepage distance must be provided.

Designer’s Data for “Worst Case” Conditions

— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Motorola Bipolar Power Transistor Device Data

3–769

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