MJE18002G
SWITCHMODEt
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The MJE18002G have an applications specific state−of−the−art die
designed for use in 220 V line operated Switchmode Power supplies
and electronic light ballasts.
Features
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•
Improved Efficiency Due to Low Base Drive Requirements:
♦
High and Flat DC Current Gain h
FE
♦
Fast Switching
♦
No Coil Required in Base Circuit for Turn−Off (No Current Tail)
•
Tight Parametric Distributions are Consistent Lot−to−Lot
•
Standard TO−220
•
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Sustaining Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Voltage
Collector Current
Base Current
−
Continuous
−
Peak (Note 1)
−
Continuous
−
Peak (Note 1)
Symbol
V
CEO
V
CES
V
EBO
I
C
I
CM
I
B
I
BM
P
D
T
J
, T
stg
Value
450
1000
9.0
2.0
5.0
1.0
2.0
50
0.4
−65
to 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W/_C
_C
POWER TRANSISTOR
2.0 AMPERES
100 VOLTS
−
50 WATTS
TO−220AB
CASE 221A−09
STYLE 1
1
2
3
MARKING DIAGRAM
Total Device Dissipation @ T
C
= 25_C
Derate above 25°C
Operating and Storage Temperature
MJE18002G
AY WW
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
Symbol
R
qJC
R
qJA
T
L
Max
2.5
62.5
260
Unit
_C/W
_C/W
_C
A
Y
WW
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle
≤
10%.
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
MJE18002G
Package
TO−220
(Pb−Free)
Shipping
50 Units / Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2010
April, 2010
−
Rev. 7
1
Publication Order Number:
MJE18002/D
MJE18002G
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (I
C
= 100 mA, L = 25 mH)
Collector Cutoff Current (V
CE
= Rated V
CEO
, I
B
= 0)
Collector Cutoff Current (V
CE
= Rated V
CES
, V
EB
= 0)
Collector Cutoff Current
(V
CE
= 800 V, V
EB
= 0)
Emitter Cutoff Current
(V
EB
= 9.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
Base−Emitter Saturation Voltage (I
C
= 0.4 Adc, I
B
= 40 mAdc)
Base−Emitter Saturation Voltage
(I
C
= 1.0 Adc, I
B
= 0.2 Adc)
Collector−Emitter Saturation Voltage
(I
C
= 0.4 Adc, I
B
= 40 mAdc)
(I
C
= 1.0 Adc, I
B
= 0.2 Adc)
DC Current Gain (I
C
= 0.2 Adc, V
CE
= 5.0 Vdc)
DC Current Gain
(I
C
= 0.4 Adc, V
CE
= 1.0 Vdc)
DC Current Gain
(I
C
= 1.0 Adc, V
CE
= 1.0 Vdc)
DC Current Gain
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(I
C
= 0.2 Adc, V
CE
= 10 Vdc, f = 1.0 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= 8.0 V)
Dynamic Saturation:
determined 1.0
ms
and
3.0
ms
after rising I
B1
reach 0.9 final I
B1
(see Figure 18)
I
C
= 0.4 A
I
B1
= 40 mA
V
CC
= 300 V
I
C
= 1.0 A
I
B1
= 0.2 A
V
CC
= 300 V
1.0
ms
3.0
ms
1.0
ms
3.0
ms
@ T
C
= 125°C
@ T
C
= 125°C
@ T
C
= 125°C
@ T
C
= 125°C
f
T
C
ob
C
ib
V
CE(dsat)
−
−
−
−
−
−
−
−
−
−
−
13
35
400
3.5
8.0
1.5
3.8
8.0
14
2.0
7.0
−
60
600
−
−
−
−
−
−
−
−
MHz
pF
pF
Vdc
V
BE(sat)
V
CE(sat)
@ T
C
= 125°C
@ T
C
= 125°C
@ T
C
= 125°C
@ T
C
= 125°C
@ T
C
= 125°C
h
FE
−
−
−
−
−
−
14
−
11
11
6.0
5.0
10
0.825
0.92
0.2
0.2
0.25
0.3
−
27
17
20
8.0
8.0
20
1.1
1.25
0.5
0.5
0.5
0.6
34
−
−
−
−
−
−
Vdc
Vdc
T
C
= 125°C
T
C
= 125°C
V
CEO(sus)
I
CEO
I
CES
450
−
−
−
−
−
−
−
−
−
−
−
−
100
100
500
100
100
Vdc
mAdc
mAdc
Symbol
Min
Typ
Max
Unit
I
EBO
mAdc
−
2. Proper strike and creepage distance must be provided.
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2
MJE18002G
ELECTRICAL CHARACTERISTICS
−
continued (T
C
= 25°C unless otherwise noted)
Characteristic
Turn−On Time
Turn−Off Time
Turn−On Time
Turn−Off Time
I
C
= 0.4 Adc
I
B1
= 40 mAdc
I
B2
= 0.2 Adc
V
CC
= 300 V
I
C
= 1.0 Adc
I
B1
= 0.2 Adc
I
B2
= 0.5 Adc
V
CC
= 300 V
Symbol
t
on
t
off
t
on
t
off
Min
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ
200
130
1.2
1.5
85
95
1.7
2.1
125
120
0.7
0.8
110
110
110
120
1.7
2.25
200
250
140
185
2.2
2.5
140
220
Max
300
−
2.5
−
150
−
2.5
−
200
−
1.25
−
200
−
175
−
2.75
−
300
−
200
−
3.0
−
250
−
Unit
ns
ms
ns
ms
SWITCHING CHARACTERISTICS: Resistive Load
(D.C.
≤
10%, Pulse Width = 20
ms)
@ T
C
= 125°C
@ T
C
= 125°C
@ T
C
= 125°C
@ T
C
= 125°C
SWITCHING CHARACTERISTICS: Inductive Load
(V
clamp
= 300 V, V
CC
= 15 V, L = 200
mH)
Fall Time
Storage Time
@ T
C
= 125°C
Crossover Time
@ T
C
= 125°C
Fall Time
Storage Time
@ T
C
= 125°C
Crossover Time
@ T
C
= 125°C
Fall Time
Storage Time
@ T
C
= 125°C
Crossover Time
@ T
C
= 125°C
I
C
= 0.4 Adc, I
B1
= 50 mAdc,
I
B2
= 50 mAdc
@ T
C
= 125°C
I
C
= 1.0 Adc, I
B1
= 0.2 Adc,
I
B2
= 0.5 Adc
@ T
C
= 125°C
I
C
= 0.4 Adc, I
B1
= 40 mAdc,
I
B2
= 0.2 Adc
@ T
C
= 125°C
t
fi
t
si
t
c
t
fi
t
si
t
c
t
fi
t
si
t
c
ns
ms
ns
ns
ms
ns
ns
ms
ns
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MJE18002G
TYPICAL STATIC CHARACTERISTICS
100
T
J
= 125°C
V
CE
= 1 V
h FE, DC CURRENT GAIN
100
T
J
= 125°C
T
J
= 25°C
V
CE
= 5 V
h FE, DC CURRENT GAIN
T
J
= 25°C
10
10
T
J
= - 20°C
1
0.01
0.01
0.10
1.00
0.10
1.00
I
C
, COLLECTOR CURRENT (AMPS)
10.00
10.00
1
0.01
0.01
0.10
1.00
0.10
1.00
I
C
, COLLECTOR CURRENT (AMPS)
10.00
10.00
Figure 1. DC Current Gain @ 1 Volt
Figure 2. DC Current Gain @ 5 Volts
2
T
J
= 25°C
V CE , VOLTAGE (VOLTS)
10.00
V CE , VOLTAGE (VOLTS)
1.00
1
2A
1.5 A
1A
0.4 A
I
C
= 0.2 A
0
0.001
0.001
0.010
0.100
0.010
0.100
I
B
, BASE CURRENT (mA)
0.10
I
C
/I
B
= 10
I
C
/I
B
= 5
T
J
= 25°C
T
J
= 125°C
0.10
1.00
0.10
1.00
I
C
, COLLECTOR CURRENT (AMPS)
10.00
10.00
1.000
1.000
0.01
0.01
0.01
Figure 3. Collector Saturation Region
Figure 4. Collector−Emitter Saturation Voltage
1.1
1.0
V BE, VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
0.9
0.8
T
J
= 25°C
0.7
0.6
T
J
= 125°C
0.5
0.4
0.01
0.01
I
C
/I
B
= 10
I
C
/I
B
= 5
0.10
1.00
0.10
1.00
I
C
, COLLECTOR CURRENT (AMPS)
10.00
10.00
1000
C
ib
100
T
J
= 25°C
f = 1 MHz
10
C
ob
1
1
1
10
100
10
100
V
CE
, COLLECTOR-EMITTER (VOLTS)
1000
1000
Figure 5. Base−Emitter Saturation Region
Figure 6. Capacitance
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MJE18002G
TYPICAL SWITCHING CHARACTERISTICS
(I
B2
= I
C
/2 for all switching)
2500
I
B(off)
= I
C
/2
V
CC
= 300 V
PW = 20
ms
t, TIME (ns)
T
J
= 125°C
I
C
/I
B
= 5
I
C
/I
B
= 10
4500
4000
3500
3000
2500
2000
1500
1000
500
0
0.4
0.4
0.6
0.6
0.8
1.0
1.2
1.4
1.6
0.8
1.0
1.2
1.4
1.6
I
C
, COLLECTOR CURRENT (AMPS)
1.8
1.8
2.0
2.0
0
0.4
0.4
0.6
0.6
0.8
1.0
1.2
1.4
1.6
0.8
1.0
1.2
1.4
1.6
I
C
, COLLECTOR CURRENT (AMPS)
1.8
1.8
2.0
2.0
I
C
/I
B
= 10
T
J
= 25°C
T
J
= 125°C
I
C
/I
B
= 5
I
B(off)
= I
C
/2
V
CC
= 300 V
PW = 20
ms
2000
t, TIME (ns)
1500
1000
T
J
= 25°C
500
Figure 7. Resistive Switching, t
on
Figure 8. Resistive Switching, t
off
3000
2500
2000
t, TIME (ns)
1500
1000
500
0
0.4
0.4
I
C
/I
B
= 10
T
J
= 25°C
T
J
= 125°C
1.8
1.8
2.0
2.0
I
B(off)
= I
C
/2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200
mH
2500
I
C
= 1 A
I
C
/I
B
= 5
t si, STORAGE TIME (ns)
2000
I
B(off)
= I
C
/2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200
mH
1500
1000
500
I
C
= 0.4 A
T
J
= 25°C
T
J
= 125°C
9
11
9
11
h
FE
, FORCED GAIN
13
13
15
15
0.6
0.6
0.8
1.0
1.2
1.4
1.6
0.8
1.0
1.2
1.4
1.6
I
C
, COLLECTOR CURRENT (AMPS)
0
5
5
7
7
Figure 9. Inductive Storage Time, t
si
Figure 10. Inductive Storage Time
600
500
400
t, TIME (ns)
300
200
100
0
0.4
0.4
t
c
t
fi
T
J
= 25°C
T
J
= 125°C
0.6
1.2
1.4
1.6
0.8
1.0
1.2
1.4
1.6
I
C
, COLLECTOR CURRENT (AMPS)
1.8
1.8
2.0
I
B(off)
= I
C
/2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200
mH
t
c
450
400
350
300
t, TIME (ns)
t
fi
250
200
150
100
50
0
0.4
0.4
0.6
t
fi
t
c
I
B(off)
= I
C
/2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200
mH
T
J
= 25°C
T
J
= 125°C
t
c
t
fi
1.2
1.4
1.6
0.8
1.0
1.2
1.4
1.6
I
C
, COLLECTOR CURRENT (AMPS)
1.8
1.8
2.0
Figure 11. Inductive Switching, t
c
and t
fi
, I
C
/I
B
= 5
Figure 12. Inductive Switching, t
c
and t
fi
, I
C
/I
B
= 10
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