MMBD301M3T5G
Silicon Hot-Carrier Diode
SCHOTTKY Barrier Diode
The MMBD301M3T5G device is a spin−off of our popular
SOT−23 three−leaded device. It is designed primarily for
high−efficiency UHF and VHF detector applications. It is readily
adaptable to many other fast switching RF and digital applications
and is housed in the SOT−723 surface mount package. This device is
ideal for low−power surface mount applications where board space is
at a premium.
Features
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•
•
•
•
Extremely Low Minority Carrier Lifetime
−
15 ps (Typ)
Very Low Capacitance
−
1.5 pF (Max) @ V
R
= 15 V
Reduces Board Space
These Devices are Pb−Free and Halogen Free/BFR Free
30 VOLTS
SILICON HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
3
CATHODE
1
ANODE
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current (DC)
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
R
I
F
P
F
Value
30
200 (Max)
200
2.0
−55
to +125
−55
to +150
Unit
V
mA
mW
mW/°C
°C
°C
AK
M
SOT−723
CASE 631AA
STYLE 2
MARKING
DIAGRAM
AK M
= Specific Device Code
= Date Code
T
J
T
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
MMBD301M3T5G
Package
Shipping
†
SOT−723 8000/T
ape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage (I
R
= 10
mA)
Total Capacitance (V
R
= 15 V, f = 1.0 MHz) Figure 1
Reverse Leakage (V
R
= 25 V) Figure 3
Forward Voltage (I
F
= 1.0 mAdc) Figure 4
Forward Voltage (I
F
= 10 mAdc) Figure 4
Symbol
V
(BR)R
C
T
I
R
V
F
V
F
Min
30
−
−
−
−
Typ
−
0.9
13
0.38
0.52
Max
−
1.5
200
0.45
0.6
Unit
V
pF
nAdc
Vdc
Vdc
©
Semiconductor Components Industries, LLC, 2013
May, 2013
−
Rev. 1
1
Publication Order Number:
MMBD301M3/D
MMBD301M3T5G
TYPICAL ELECTRICAL CHARACTERISTICS
2.8
C T, TOTAL CAPACITANCE (pF)
2.4
2.0
1.6
1.2
0.8
0.4
0
0
3.0
6.0
9.0
12
15
18
21
V
R
, REVERSE VOLTAGE (VOLTS)
24
27
30
t
, MINORITY CARRIER LIFETIME (ps)
f = 1.0 MHz
500
400
KRAKAUER METHOD
300
200
100
0
0
10
20
30
40
50
60
70
I
F
, FORWARD CURRENT (mA)
80
90
100
Figure 1. Total Capacitance
Figure 2. Minority Carrier Lifetime
10
IF, FORWARD CURRENT (mA)
100
IR, REVERSE LEAKAGE (
m
A)
1.0
T
A
= 100°C
10
T
A
= 85°C
T
A
= - 40°C
0.1
75°C
1.0
T
A
= 25°C
0.01
25°C
0.001
0.1
0
6.0
12
18
V
R
, REVERSE VOLTAGE (VOLTS)
24
30
0.2
0.4
0.6
0.8
V
F
, FORWARD VOLTAGE (VOLTS)
1.0
1.2
Figure 3. Reverse Leakage
Figure 4. Forward Voltage
I
F(PEAK)
CAPACITIVE
CONDUCTION
I
R(PEAK)
FORWARD
CONDUCTION
STORAGE
CONDUCTION
SINUSOIDAL
GENERATOR
BALLAST
NETWORK
(PADS)
PADS
DUT
SAMPLING
OSCILLOSCOPE
(50
W
INPUT)
Figure 5. Krakauer Method of Measuring Lifetime
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2
MMBD301M3T5G
PACKAGE DIMENSIONS
SOT−723
CASE 631AA
ISSUE D
−X−
b1
D
3
−Y−
E
A
H
E
1
2X
2
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
DIM
A
b
b1
C
D
E
e
H
E
L
L2
MILLIMETERS
MIN
NOM
MAX
0.45
0.50
0.55
0.15
0.21
0.27
0.25
0.31
0.37
0.07
0.12
0.17
1.15
1.20
1.25
0.75
0.80
0.85
0.40 BSC
1.15
1.20
1.25
0.29 REF
0.15
0.20
0.25
e
TOP VIEW
b
0.08 X Y
L
C
SIDE VIEW
3X
1
3X
L2
BOTTOM VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
0.40
2X
PACKAGE
OUTLINE
2X
STYLE 2:
PIN 1. ANODE
2. N/C
3. CATHODE
0.27
1.50
3X
0.52
0.36
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent− Marking.pdf. SCILLC
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for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different
applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
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MMBD301M3/D