SMBJ5.0 THRU SMBJ188CA
Features
· Underwriters Laboratory recognition under UL standard
for safety 497B : Isolated loop curcuit protection
· Low profile package with built-in strain relief for surface
mounted applications
· Glass passivated junction
· Low incremental surge resistance, excellent clamping
capability
· 600W peak pulse power capability with a 10/1000μS
waveform, repetition rate(duty cycle) : 0.01%
· Very fast response time
· High temperature soldering guaranteed : 250
℃
/10 seconds
at terminals
POWER 600Watts
VOLTAGE 5.0 to 188 Volts
DO-214AA (SMB)
0.083(2.11)
0.075(1.91)
0.155(3.94)
0.130(3.30)
0.185(4.70)
0.160(4.06)
0.012(0.31)
0.006(0.15)
0.096(2.44)
0.083(2.13)
0.050(1.27)
0.030(0.76)
0.008(0.203)
MAX.
0.220(5.59)
0.200(5.08)
Mechanical Data
· Case : JEDEC DO-214AA(SMB) molded plastic
over passivated chip
· Terminals : Solder plated , solderable per
MIL-STD-750, method 2026
· Polarity : For uni-directional types the band denotes
the cathode, which is positive with respect to the
anode under normal TVS operation
· Mounting Position : Any
· Weight : 0.003 ounce, 0.093 gram
Dimensions in inches and (millimeters)
Devices For Bidirectional Applications
· For bi-directional devices, use suffix C or CA (e.g. SMBJ10C, SMBJ10CA).
Electrical characteristics apply in both directions.
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified)
Symbols
Peak pulse power dissipation with a 10/1000μS waveform (Note 1,2. Fig. 1)
Peak pulse current with a waveform (Note 1)
Peak forward surge current, 8.3mm single half sine-wave unidirectional only (Note 2)
Typical thermal resistance, junction to ambient (Note 3)
Typical thermal resistance, junction to lead
Operating junction and storage temperature range
P
PPM
I
PPM
I
FSM
Values
Minimum 600
See next table
100
100
20
-55 to +150
Units
Watts
Amps
Amps
℃/W
℃/W
℃
Rθ
JA
Rθ
JL
T
J
,T
STG
Notes:
(1) Non repetitive current pulse, per Fig.3 and derated above T
A
=25℃ per Fig.2
(2) Mounted on 0.2×0.2"(5.0×5.0mm) copper pads to each terminal
(3) Mounted on minimum recommended pad layout
ELECTRICAL CHARACTERISTIC
Ratings at 25℃ ambient temperature unless otherwise specified. VF=3.5V at IF=50A (uni-directional only)
Device Type
S MB J 5.0
(C )
S MB J 5.0
(C )
A
(5)
S MB J 6.0
(C )
S MB J 6.0
(C )
A
S MB J 6.5
(C )
S MB J 6.5
(C )
A
S MB J 7.0
(C )
S MB J 7.0
(C )
A
S MB J 7.5
(C )
S MB J 7.5
(C )
A
S MB J 8.0
(C )
S MB J 8.0
(C )
A
S MB J 8.5
(C )
S MB J 8.5
(C )
A
S MB J 9.0
(C )
S MB J 9.0
(C )
A
S MB J 10
(C )
S MB J 10
(C )
A
S MB J 11
(C )
S MB J 11
(C )
A
S MB J 12
(C )
S MB J 12
(C )
A
S MB J 13
(C )
S MB J 13
(C )
A
S MB J 14
(C )
S MB J 14
(C )
A
S MB J 15
(C )
S MB J 15
(C )
A
S MB J 16
(C )
S MB J 16
(C )
A
S MB J 17
(C )
S MB J 17
(C )
A
S MB J 18
(C )
S MB J 18
(C )
A
S MB J 20
(C )
S MB J 20
(C )
A
S MB J 22
(C )
S MB J 22
(C )
A
S MB J 24
(C )
S MB J 24
(C )
A
S MB J 26
(C )
S MB J 26
(C )
A
S MB J 28
(C )
S MB J 28
(C )
A
S MB J 30
(C )
S MB J 30
(C )
A
Notes : (1)
(2)
(3)
(4)
(5)
Device
Marking
Code
UNI
BI
KD
KD
KE
KE
KF
KF
KG
KG
KH
AH
KK
AK
KL
KL
KM
KM
KN
AN
KP
AP
KQ
AQ
KR
AR
KS
AS
KT
AT
KU
AU
KV
AV
KW
AW
KX
AX
KY
KY
KZ
KZ
LD
BD
LE
BE
LF
LF
LG
LG
LH
BH
LK
BK
LL
BL
LM
BM
LN
LN
LP
LM
LQ
LQ
LR
LR
LS
BS
LT
BT
LU
LU
LV
LV
LW
BW
LX
BX
LY
BY
LZ
BZ
MD
CD
ME
CE
MF
MF
MG
MG
MH
CH
MK
CK
Breakdown Voltage
V
(BR)
at I
T
(1)
(V)
Min
Max
6.40
7.82
7.07
6.40
6.67
8.15
7.37
6.67
7.22
8.82
7.22
7.98
7.78
9.51
7.78
8.60
8.33
10.2
9.21
8.33
8.89
10.9
9.83
8.89
9.44
11.5
10.4
9.44
10.0
12.2
11.1
10.0
11.1
13.6
12.3
11.1
12.2
14.9
12.2
13.5
13.3
16.3
14.7
13.3
14.4
17.6
15.9
14.4
15.6
19.1
17.2
15.6
16.7
20.4
16.7
18.5
17.8
21.8
19.7
17.8
18.9
23.1
20.9
18.9
20.0
24.4
22.1
20.0
22.2
27.1
24.5
22.2
24.4
29.8
24.4
26.9
26.7
32.6
26.7
29.5
28.9
35.3
31.9
28.9
31.1
38.0
31.1
34.4
33.3
40.7
36.8
33.3
Test
Current
I
T
(mA)
10
10
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
V
WM
(V)
5.0
5.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
10
10
11
11
12
12
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
24
26
26
28
28
30
30
Maximum
Maximum
Maximum
Reverse Leakage Peak Pulse Surge
Clamping
at V
WM
Current I
PPM
Voltage at I
PPM
I
D
( A)
(3)
μ
(A)
(2)
V
C
(V)
800
62.5
9.6
800
65.2
9.2
800
52.6
11.4
800
58.3
10.3
500
48.8
12.3
500
53.6
11.2
200
45.1
13.3
200
50.0
12.0
100
42.0
14.3
100
46.5
12.9
50
40.0
15.0
50
44.1
13.6
20
37.7
15.9
20
41.7
14.4
10
35.5
16.9
10
39.0
15.4
5.0
31.9
18.8
5.0
35.3
17.0
5.0
29.9
20.1
5.0
33.0
18.2
5.0
27.3
22.0
5.0
30.2
19.9
1.0
25.2
23.8
1.0
27.9
21.5
1.0
23.3
25.8
1.0
25.9
23.2
1.0
22.3
26.9
1.0
24.6
24.4
1.0
20.8
28.8
1.0
23.1
26.0
1.0
19.7
30.5
1.0
21.7
27.6
1.0
18.6
32.2
1.0
20.5
29.2
1.0
16.8
35.8
1.0
18.5
32.4
1.0
15.2
39.4
1.0
16.9
35.5
1.0
14.0
43.0
1.0
15.4
38.9
1.0
12.9
46.6
1.0
14.3
42.1
1.0
12.0
50.0
1.0
13.2
45.4
1.0
11.2
53.5
1.0
12.4
48.4
P uls e tes t: t
p
= 50ms
S urge current waveform per F ig. 3 and derate per F ig. 2
For bi-directional types having V
WM
of 10 V olts and les s, the I
D
limit is doubled
All terms and s ymbols are cons is tent with ANS I/IE E E C 62.35
For the bidirectional S MB G /S MB J 5.0C A, the maximum V
(B R )
is 7.25V
ELECTRICAL CHARACTERISTIC
Ratings at 25℃ ambient temperature unless otherwise specified. VF=3.5V at IF=50A (uni-directional only)
Device Type
S MB J 33
(C )
S MB J 33
(C )
A
S MB J 36
(C )
S MB J 36
(C )
A
S MB J 40
(C )
S MB J 40
(C )
A
S MB J 43
(C )
S MB J 43
(C )
A
S MB J 45
(C )
S MB J 45
(C )
A
S MB J 48
(C )
S MB J 48
(C )
A
S MB J 51
(C )
S MB J 51
(C )
A
S MB J 54
(C )
S MB J 54
(C )
A
S MB J 58
(C )
S MB J 58
(C )
A
S MB J 60
(C )
S MB J 60
(C )
A
S MB J 64
(C )
S MB J 64
(C )
A
S MB J 70
(C )
S MB J 70
(C )
A
S MB J 75
(C )
S MB J 75
(C )
A
S MB J 78
(C )
S MB J 78
(C )
A
S MB J 85
(C )
S MB J 85
(C )
A
S MB J 90
(C )
S MB J 90
(C )
A
S MB J 100
(C )
S MB J 100
(C )
A
S MB J 110
(C )
S MB J 110
(C )
A
S MB J 120
(C )
S MB J 120
(C )
A
S MB J 130
(C )
S MB J 130
(C )
A
S MB J 150
(C )
S MB J 150
(C )
A
S MB J 160
(C )
S MB J 160
(C )
A
S MB J 170
(C )
S MB J 170
(C )
A
S MB J 188
(C )
S MB J 188
(C )
A
Notes : (1)
(2)
(3)
(4)
Device
Marking
Code
UNI
BI
ML
CL
MM
CM
MN
CN
MP
CP
MQ
CQ
MR
CR
MS
CS
MT
CT
MU
MU
MV
MV
MW
MW
MX
MX
MY
MY
MZ
MZ
ND
ND
NE
NE
NF
NF
NG
NG
NH
NH
NK
NK
NL
NL
NM
NM
NN
NN
NP
NP
NQ
NQ
NR
NR
NS
NS
NT
NT
NU
NU
NV
NV
NW
NW
NX
NX
NY
NY
NZ
NZ
PD
PD
PE
PE
PF
PF
PG
PG
PH
PH
PK
PK
PL
PL
PM
PM
PN
PN
PP
PP
PQ
PQ
PR
PR
PT
PT
PS
PS
Breakdown Voltage
V
(BR)
at I
T
(1)
(V)
Min
Max
36.7
44.9
36.7
40.6
40.0
48.9
40.0
44.2
44.4
54.3
44.4
49.1
47.8
58.4
47.8
52.8
50.0
61.1
50.0
55.3
53.3
65.1
53.3
58.9
56.7
69.3
56.7
62.7
60.0
73.3
60.0
66.3
64.4
78.7
64.4
71.2
66.7
81.5
66.7
73.7
71.1
86.9
71.1
78.6
77.8
95.1
77.8
86.0
83.3
102
83.3
92.1
86.7
106
86.7
95.8
94.4
115
94.4
104
100
122
100
111
111
136
111
123
122
149
122
135
133
163
133
147
144
176
144
159
167
204
167
185
178
218
178
197
189
231
189
209
209
255
209
231
Test
Current
I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
V
WM
(V)
33
33
36
36
40
40
43
43
45
45
48
48
51
51
54
54
58
58
60
60
64
64
70
70
75
75
78
78
85
85
90
90
100
100
110
110
120
120
130
130
150
150
160
160
170
170
188
188
Maximum
Maximum
Maximum
Reverse Leakage Peak Pulse Surge
Clamping
at V
WM
Current I
PPM
Voltage at I
PPM
I
D
( A)
(3)
μ
(A)
(2)
V
C
(V)
1.0
10.2
59.0
1.0
11.3
53.3
1.0
9.3
64.3
1.0
10.3
58.1
1.0
8.4
71.4
1.0
9.3
64.5
1.0
7.8
76.7
1.0
8.6
69.4
1.0
7.5
80.3
1.0
8.3
72.7
1.0
7.0
85.5
1.0
7.8
77.4
1.0
6.6
91.1
1.0
7.3
82.4
1.0
6.2
96.3
1.0
6.9
87.1
1.0
5.8
103
1.0
6.4
93.6
1.0
5.6
107
1.0
6.2
96.8
1.0
5.3
114
1.0
5.8
103
1.0
4.8
125
1.0
5.3
113
1.0
4.5
134
1.0
5.0
121
1.0
4.3
139
1.0
4.8
126
1.0
4.0
151
1.0
4.4
137
1.0
3.8
160
1.0
4.1
146
1.0
3.4
179
1.0
3.7
162
1.0
3.1
196
1.0
3.4
177
1.0
2.8
214
1.0
3.1
193
1.0
2.6
231
1.0
2.9
209
1.0
2.2
268
1.0
2.5
243
1.0
2.1
287
1.0
2.3
259
1.0
2.0
304
1.0
2.2
275
1.0
1.7
344
1.0
2.0
328
P uls e tes t: t
p
= 50ms
S urge current waveform per F ig. 3 and derate per F ig. 2
For bi-directional types having V
WM
of 10 V olts and les s, the I
D
limit is doubled
All terms and s ymbols are cons is tent with ANS I/IE E E C 62.35
RATINGS AND CHARACTERISTIC CURVES SMBJ5.0 THRU SMBJ188CA
Fig. 1ÐP eak P uls e Power R ating C urve
P eak P uls e P ower (P
P P
) or C urrent (I
P P
)
Derating in P ercentage, %
100
100
Fig. 2Ð P uls e Derating C ur ve
P eak P uls e P ower (kW)
75
10
50
1
0.2 x 0.2" (0.5 x 0.5mm)
C opper P ad Areas
0.1
0.1
μ
s
1.0
μ
s
1 0
μ
s
100
1.0ms
10ms
P
PPM ,
25
0
0
25
50
75
100
125
150
175
200
t
d ,
P uls e Width (s ec.)
T
A
,
Ambient Temperature ( C )
Fig. 3Ð P uls e Waveform
150
Fig. 4ÐT ypical J unction C apacitance
6,000
P eak P uls e C urrent, % I
R S M
100
P eak Value
I
P P M
J unction C apacitance (pF )
tr = 10
μ
s
T
J
= 25 C
P uls e Width (td)
is defined as the point
where the peak current
decays to 50% of I
P P M
o
Meas ured at
Zero B ias
1,000
Half Value
I
P P M
50
IP P
2
100
10/1000
μ
s
W aveform
as defined by R .E .A.
td
V
R
, Meas ured at
S tand-Off
Voltage, V
WM
Uni-Directional
B i-Directional
T
J
= 25 C
f = 1.0MHz
V s ig = 50mV p-p
100
200
o
I
P P M ,
0
C
J
0
1.0
2.0
3.0
4.0
10
1
,
10
t,
Time (ms )
V
WM
,
R evers e S tand-Off Voltage (V )
F ig. 5ÐT ypic al Trans ient T hermal
Impedanc e
P eak F orward S urge C urrent (A)
100
200
Fig. 6Ð Maximum Non-R epetitive P eak
F orward S ur e C urrent
g
8.3ms S ingle Half S ine-Wave
(J E DE C Method)
Unidirectional Only
100
Trans ient T hermal Impedance ( C /W)
10
1.0
I
F S M ,
0.1
0.001
0.01
0.1
1
10
100
1000
10
1
1
0
100
t
p
,
P uls e Duration (s ec)
Number of C ycles at 60H
Z
Microchip MCU
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