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70914S20PFB

产品描述Dual-Port SRAM, 4KX9, 20ns, CMOS, PQFP80, 14 X 14 MM, 1.60 MM HEIGHT, 0.65 PITCH, TQFP-80
产品类别存储    存储   
文件大小105KB,共11页
制造商IDT (Integrated Device Technology)
下载文档 详细参数 选型对比 全文预览

70914S20PFB概述

Dual-Port SRAM, 4KX9, 20ns, CMOS, PQFP80, 14 X 14 MM, 1.60 MM HEIGHT, 0.65 PITCH, TQFP-80

70914S20PFB规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称IDT (Integrated Device Technology)
零件包装代码QFP
包装说明LQFP, QFP80,.64SQ
针数80
Reach Compliance Codenot_compliant
ECCN代码EAR99
最长访问时间20 ns
I/O 类型COMMON
JESD-30 代码S-PQFP-G80
JESD-609代码e0
长度14 mm
内存密度36864 bit
内存集成电路类型DUAL-PORT SRAM
内存宽度9
湿度敏感等级3
功能数量1
端口数量2
端子数量80
字数4096 words
字数代码4000
工作模式SYNCHRONOUS
最高工作温度125 °C
最低工作温度-55 °C
组织4KX9
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码LQFP
封装等效代码QFP80,.64SQ
封装形状SQUARE
封装形式FLATPACK, LOW PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)240
电源5 V
认证状态Not Qualified
筛选级别MIL-PRF-38535
座面最大高度1.6 mm
最大待机电流0.02 A
最小待机电流4.5 V
最大压摆率0.31 mA
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级MILITARY
端子面层Tin/Lead (Sn85Pb15)
端子形式GULL WING
端子节距0.65 mm
端子位置QUAD
处于峰值回流温度下的最长时间20
宽度14 mm

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HIGH SPEED 36K (4K X 9)
SYNCHRONOUS
DUAL-PORT RAM
Features
IDT70914S
High-speed clock-to-data output times
– Military: 20/25ns (max.)
– Commercial: 12/15/20ns (max.)
Low-power operation
– IDT70914S
Active: 850 mW (typ.)
Standby: 50 mW (typ.)
Architecture based on Dual-Port RAM cells
– Allows full simultaneous access from both ports
Synchronous operation
– 4ns setup to clock, 1ns hold on all control, data, and address
inputs
– Data input, address, and control registers
– Fast 12ns clock to data out
– Self-timed write allows fast cycle times
– 16ns cycle times, 60MHz operation
TTL-compatible, single 5V (+ 10%) power supply
Clock Enable feature
Guaranteed data output hold times
Available in 68-pin PLCC, and 80-pin TQFP
Military product compliant to MIL-PRF-38535 QML
Industrial temperature range (-40°C to +85°C) is available
for selected speeds.
Recommended for replacement of IDT7099 (4K x 9) if
separate 9th bit data control signals are not required.
Functional Block Diagram
REGISTER
REGISTER
I/O
0-8L
WRITE
LOGIC
MEMOR
MEMORY
Y
ARRAY
ARRAY
WRITE
LOGIC
I/O
0-8R
SENSE
SENSE
AMPS DECODER DECODER AMPS
OE
L
CLK
L
CLKEN
L
Self-
timed
Write
Logic
REG
en
REG
en
OE
R
CLK
R
CLKEN
R
Self-
timed
Write
Logic
R/W
L
CE
L
REG
REG
R/W
R
CE
R
3490 drw 01
A
0L
-A
11L
A
0R
-A
11R
OCTOBER 2008
1
©2008 Integrated Device Technology, Inc.
DSC-3490/7

70914S20PFB相似产品对比

70914S20PFB 70914S25PFB 70914S20JB 70914S20JB8 70914S25JB
描述 Dual-Port SRAM, 4KX9, 20ns, CMOS, PQFP80, 14 X 14 MM, 1.60 MM HEIGHT, 0.65 PITCH, TQFP-80 Dual-Port SRAM, 4KX9, 52ns, CMOS, PQFP80, 14 X 14 MM, 1.60 MM HEIGHT, 0.65 PITCH, TQFP-80 Dual-Port SRAM, 4KX9, 20ns, CMOS, PQCC68, 0.950 X 0.950 INCH, 1.27 MM PITCH, PLASTIC, LCC-68 Multi-Port SRAM, 4KX9, 20ns, CMOS, PQCC68 Dual-Port SRAM, 4KX9, 25ns, CMOS, PQCC68, 0.950 X 0.950 INCH, 1.27 MM PITCH, PLASTIC, LCC-68
是否Rohs认证 不符合 不符合 不符合 不符合 不符合
厂商名称 IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology)
包装说明 LQFP, QFP80,.64SQ 14 X 14 MM, 1.60 MM HEIGHT, 0.65 PITCH, TQFP-80 QCCJ, LDCC68,1.0SQ QCCJ, LDCC68,1.0SQ 0.950 X 0.950 INCH, 1.27 MM PITCH, PLASTIC, LCC-68
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant not_compliant
最长访问时间 20 ns 52 ns 20 ns 20 ns 25 ns
I/O 类型 COMMON COMMON COMMON COMMON COMMON
JESD-30 代码 S-PQFP-G80 S-PQFP-G80 S-PQCC-J68 S-PQCC-J68 S-PQCC-J68
JESD-609代码 e0 e0 e0 e0 e0
内存密度 36864 bit 36864 bit 36864 bit 36864 bit 36864 bit
内存集成电路类型 DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM MULTI-PORT SRAM DUAL-PORT SRAM
内存宽度 9 9 9 9 9
湿度敏感等级 3 3 1 1 1
端口数量 2 2 2 2 2
端子数量 80 80 68 68 68
字数 4096 words 4096 words 4096 words 4096 words 4096 words
字数代码 4000 4000 4000 4000 4000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 125 °C 125 °C 125 °C 125 °C 125 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C -55 °C
组织 4KX9 4KX9 4KX9 4KX9 4KX9
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 LQFP LQFP QCCJ QCCJ QCCJ
封装等效代码 QFP80,.64SQ QFP80,.64SQ LDCC68,1.0SQ LDCC68,1.0SQ LDCC68,1.0SQ
封装形状 SQUARE SQUARE SQUARE SQUARE SQUARE
封装形式 FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE CHIP CARRIER CHIP CARRIER CHIP CARRIER
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
电源 5 V 5 V 5 V 5 V 5 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
筛选级别 MIL-PRF-38535 MIL-PRF-38535 MIL-PRF-38535 38535Q/M;38534H;883B MIL-PRF-38535
最大待机电流 0.02 A 0.02 A 0.02 A 0.02 A 0.02 A
最小待机电流 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
最大压摆率 0.31 mA 0.29 mA 0.31 mA 0.31 mA 0.29 mA
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V
表面贴装 YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS
温度等级 MILITARY MILITARY MILITARY MILITARY MILITARY
端子面层 Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15)
端子形式 GULL WING GULL WING J BEND J BEND J BEND
端子节距 0.65 mm 0.65 mm 1.27 mm 1.27 mm 1.27 mm
端子位置 QUAD QUAD QUAD QUAD QUAD
是否无铅 含铅 含铅 含铅 - 含铅
零件包装代码 QFP QFP LCC - LCC
针数 80 80 68 - 68
ECCN代码 EAR99 EAR99 EAR99 - EAR99
长度 14 mm 14 mm 24.2062 mm - 24.2062 mm
功能数量 1 1 1 - 1
峰值回流温度(摄氏度) 240 240 225 - 225
座面最大高度 1.6 mm 1.6 mm 4.57 mm - 4.57 mm
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V - 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V - 4.5 V
处于峰值回流温度下的最长时间 20 20 30 - 30
宽度 14 mm 14 mm 24.2062 mm - 24.2062 mm
Base Number Matches - 1 1 1 1

 
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