Philips Semiconductors
Product specification
Logic level TOPFET
PIP3117-B
DESCRIPTION
Monolithic temperature and
overload protected logic level power
MOSFET in
TOPFET2
technology
assembled in a 3 pin surface mount
plastic package.
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
D
T
j
R
DS(ON)
I
ISL
PARAMETER
Continuous drain source voltage
Continuous drain current
Total power dissipation
Continuous junction temperature
Drain-source on-state resistance
Input supply current
V
IS
= 5 V
MAX.
50
16
65
150
50
650
UNIT
V
A
W
˚C
mΩ
µA
APPLICATIONS
General purpose switch for driving
lamps
motors
solenoids
heaters
FEATURES
TrenchMOS output stage
Current limiting
Overload protection
Overtemperature protection
Protection latched reset by input
5 V logic compatible input level
Control of output stage and
supply of overload protection
circuits derived from input
Low operating input current
permits direct drive by
micro-controller
ESD protection on all pins
Overvoltage clamping for turn
off of inductive loads
FUNCTIONAL BLOCK DIAGRAM
DRAIN
O/V
CLAMP
INPUT
RIG
POWER
MOSFET
LOGIC AND
PROTECTION
SOURCE
Fig.1. Elements of the TOPFET.
PINNING - SOT404
PIN
1
2
3
mb
input
drain
source
drain
DESCRIPTION
PIN CONFIGURATION
mb
SYMBOL
D
TOPFET
I
P
2
1
3
S
May 2001
1
Rev 1.000
Philips Semiconductors
Product specification
Logic level TOPFET
PIP3117-B
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
DS
I
D
I
D
I
I
I
IRM
P
D
T
stg
T
j
T
sold
PARAMETER
Continuous drain source voltage
1
Continuous drain current
Continuous drain current
Continuous input current
Non-repetitive peak input current
Total power dissipation
Storage temperature
Continuous junction temperature
2
Case temperature
CONDITIONS
-
V
IS
= 5 V; T
mb
= 25 ˚C
V
IS
= 5 V; T
mb
≤
125 ˚C
-
t
p
≤
1 ms
T
mb
≤
25 ˚C
-
normal operation
during soldering
MIN.
-
-
-
-5
-10
-
-55
-
-
MAX.
50
self -
limited
16
5
10
65
175
150
260
UNIT
V
A
A
mA
mA
W
˚C
˚C
˚C
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge capacitor
voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MIN.
-
MAX.
2
UNIT
kV
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL
E
DSM
E
DRM
PARAMETER
Inductive load turn-off
Non-repetitive clamping energy
Repetitive clamping energy
CONDITIONS
I
DM
= 16 A; V
DD
≤
20 V
T
mb
≤
25 ˚C
T
mb
≤
95 ˚C; f = 250 Hz
MIN.
-
-
MAX.
200
32
UNIT
mJ
mJ
OVERLOAD PROTECTION LIMITING VALUE
With an adequate protection supply provided via the input pin, TOPFET can protect itself from two types of overload
- overtemperature and short circuit load.
SYMBOL
V
DS
PARAMETER
Drain source voltage
3
REQUIRED CONDITION
4 V
≤
V
IS
≤
5.5 V
MIN.
0
MAX.
35
UNIT
V
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Thermal resistance
Junction to mounting base
Junction to ambient
CONDITIONS
-
minimum footprint FR4 PCB
MIN.
-
-
TYP.
1.75
50
MAX.
1.92
-
UNIT
K/W
K/W
1
Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2
A higher T
j
is allowed as an overload condition but at the threshold T
j(TO)
the over temperature trip operates to protect the switch.
3
All control logic and protection functions are disabled during conduction of the source drain diode.
May 2001
2
Rev 1.000
Philips Semiconductors
Product specification
Logic level TOPFET
PIP3117-B
OUTPUT CHARACTERISTICS
Limits are for -40˚C
≤
T
mb
≤
150˚C; typicals are for T
mb
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
Off-state
V
(CL)DSS
I
DSS
Drain-source clamping voltage
CONDITIONS
V
IS
= 0 V
I
D
= 10 mA
I
DM
= 2 A; t
p
≤
300
µs; δ ≤
0.01
Drain source leakage current
On-state
R
DS(ON)
Drain-source resistance
V
DS
= 40 V
T
mb
= 25 ˚C
I
DM
= 6 A; t
p
≤
300
µs; δ ≤
0.01
V
IS
≥
4.4 V
V
IS
≥
4 V
T
mb
= 25 ˚C
T
mb
= 25 ˚C
-
-
-
-
-
36
-
39
95
50
100
55
mΩ
mΩ
mΩ
mΩ
50
50
-
-
-
60
-
0.1
-
70
100
10
V
V
µA
µA
MIN.
TYP.
MAX.
UNIT
OVERLOAD CHARACTERISTICS
-40˚C
≤
T
mb
≤
150˚C unless otherwise specified.
SYMBOL
I
D
PARAMETER
Short circuit load
Drain current limiting
CONDITIONS
V
DS
= 13 V
V
IS
= 5 V;
4.4 V
≤
V
IS
≤
5.5 V
4 V
≤
V
IS
≤
5.5 V
Overload protection
P
D(TO)
T
DSC
T
j(TO)
Overload power threshold
Characteristic time
Overtemperature protection
Threshold junction
temperature
2
150
170
-
˚C
V
IS
= 5 V;T
mb
= 25˚C
device trips if P
D
> P
D(TO)
which determines trip time
1
40
200
120
350
160
600
W
µs
T
mb
= 25˚C
16
12
8
24
-
-
32
36
36
A
A
A
MIN.
TYP.
MAX.
UNIT
1
Trip time t
d sc
varies with overload dissipation P
D
according to the formula t
d sc
≈
T
DSC
/ ln[ P
D
/ P
D(TO)
].
2
This is independent of the dV/dt of input voltage V
IS
.
May 2001
3
Rev 1.000
Philips Semiconductors
Product specification
Logic level TOPFET
PIP3117-B
INPUT CHARACTERISTICS
The supply for the logic and overload protection is taken from the input.
Limits are for -40˚C
≤
T
mb
≤
150˚C; typicals are for T
mb
= 25˚C unless otherwise specified
SYMBOL
V
IS(TO)
I
IS
I
ISL
V
ISR
t
lr
V
(CL)IS
R
IG
PARAMETER
Input threshold voltage
Input supply current
Input supply current
Protection reset voltage
1
Latch reset time
Input clamping voltage
Input series resistance
2
to gate of power MOSFET
CONDITIONS
V
DS
= 5 V; I
D
= 1 mA
T
mb
= 25˚C
normal operation;
protection latched;
reset time t
r
≥
100
µs
V
IS1
= 5 V, V
IS2
< 1 V
I
I
= 1.5 mA
T
mb
= 25˚C
V
IS
= 5 V
V
IS
= 4 V
V
IS
= 5 V
V
IS
= 3 V
MIN.
0.6
1.1
100
80
200
130
1.5
10
5.5
-
TYP.
-
1.6
220
195
400
250
2
40
-
33
MAX.
2.4
2.1
400
330
650
430
2.9
100
8.5
-
UNIT
V
V
µA
µA
µA
µA
V
µs
V
kΩ
SWITCHING CHARACTERISTICS
T
mb
= 25 ˚C; V
DD
= 13 V; resistive load R
L
= 4
Ω.
Refer to waveform figure and test circuit.
SYMBOL
t
d on
t
r
t
d off
t
f
PARAMETER
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
IS
= 0 V
CONDITIONS
V
IS
= 5 V
MIN.
-
-
-
-
TYP.
15
30
70
35
MAX.
30
60
140
70
UNIT
µs
µs
µs
µs
1
The input voltage below which the overload protection circuits will be reset.
2
Not directly measureable from device terminals.
May 2001
4
Rev 1.000
Philips Semiconductors
Product specification
Logic level TOPFET
PIP3117-B
MECHANICAL DATA
Plastic single-ended surface mounted package (Philips version of D
2
-PAK); 3 leads
(one lead cropped)
SOT404
A
E
A1
mounting
base
D1
D
HD
2
Lp
1
3
b
c
Q
e
e
0
2.5
scale
5 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
4.50
4.10
A1
1.40
1.27
b
0.85
0.60
c
0.64
0.46
D
max.
11
D1
1.60
1.20
E
10.30
9.70
e
2.54
Lp
2.90
2.10
HD
15.40
14.80
Q
2.60
2.20
OUTLINE
VERSION
SOT404
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
98-12-14
99-06-25
Fig.2. SOT404 surface mounting package
1
, centre pin connected to mounting base.
1
Epoxy meets UL94 V0 at 1/8". Net mass: 1.4 g
For soldering guidelines and SMD footprint design, please refer to Data Handbook SC18.
May 2001
5
Rev 1.000
PCB设计
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
