IS4N46
IS4N45
LOW INPUT CURRENT
DARLINGTON OUTPUT OPTICALLY
COUPLED ISOLATOR
APPROVALS
UL recognised, File No. E91231 "JJ "
'X' SPECIFICATIONAPPROVALS
VDE 0884 in 3 available lead form : -
- STD
- G form
2.54
1
7.0
6.0
1.2
7.62
6.62
2
3
Dimensions in mm
6
5
4
- SMD approved to CECC 00802
DESCRIPTION
The IS4N45, IS4N46 are optically coupled
isolators consisting of an infrared light emitting
diode and a NPN silicon photo darlington which
has an integral base-emitter resistor to optimise
switching speed and elevated temperature
characteristics in a standard 6pin dual in line
plastic package. These devices are designed to
equal the 4N45, 4N46 characteristics while
providing greater voltage and current capability.
FEATURES
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
High Current Transfer Ratio ( 1500% typ.)
High BV
CEO
( 55V min.)
Internal base-emitter resistor minimizes
output leakage
Low input current 0.5mA I
F
APPLICATIONS
Telephone ring detector
Digital logic ground isolation
Low input current line receiver
Logic to reed relay interface
Level shifting
Interface between logic families
Line voltage status indicator - low input
power dissipation
OPTION SM
SURFACE MOUNT
OPTION G
7.62
4.0
3.0
0.5
13°
Max
0.26
3.0
0.5
3.35
ABSOLUTEMAXIMUMRATINGS
(25°C unless otherwise specified)
Storage Temperature
-40°C to + 125°C
Operating Temperature
-25°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUTDIODE
Forward Current
Reverse Voltage
Power Dissipation
50mA
6V
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage V
CEO
Emitter-baseVoltage V
EBO
Collector Current
Power Dissipation
POWER DISSIPATION
55V
6V
150mA
300mW
7.62
0.6
0.1
10.46
9.86
1.25
0.75
0.26
Total Power Dissipation
10.16
350mW
ISOCOMCOMPONENTSLTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1UD
Tel: (01429) 863609 Fax :(01429) 863581
19/11/08
DB91024
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Current (I
R
)
Output
Collector-emitter Breakdown (BVceo)
Emitter-collector Breakdown (BVeco)
Emitter-base Breakdown (BVebo)
Coupled
DC Current Transfer Ratio ( CTR )
IS4N46
IS4N46
IS4N45
IS4N46, IS4N45
Logic Low Output Voltage ( V
OL
)
IS4N46
IS4N46
IS4N45
IS4N46, IS4N45
Input to Output Isolation Voltage V
ISO
Input-output Isolation Resistance R
ISO
Input-output Capacitance
Cf
Output rise time, tr
Output fall time, tf
55
0.1
6
350
500
250
200
1.0
1.0
1.0
1.2
5300
7500
5x10
10
0.6
100
20
300
100
MIN TYP MAX UNITS
1.2
1.5
10
V
μA
V
V
V
%
%
%
%
V
V
V
V
V
RMS
V
PK
Ω
pF
μS
μS
TEST CONDITION
I
F
= 10mA
V
R
= 4V
I
C
= 1mA
I
E
= 10μA
I
E
= 10μA
0.5mA I
F
, 1V V
CE
1mA I
F
, 1V V
CE
1mA I
F
, 1V V
CE
10mA I
F
, 1.2V V
CE
0.5mA I
F
, 1.75mA I
OL
1mA I
F
, 5mA I
OL
1mA I
F
, 2.5mA I
OL
10mA I
F
, 20mA I
OL
See note 1
See note 1
V
IO
= 500V (note 1)
V = 0, f =1MHz
V
CE
= 2V, I
C
= 20mA
R
L
= 100Ω
19/11/08
DB91024
Collector Power Dissipation vs. Ambient Temperature
250
Collector power dissipation P
C
(mW)
Normalized output current
Normalized Output Current vs.
Collector-emitter Voltage
100
50mA
10
10mA
1.0
I
F
= 1mA
0.1
Normalized to
I
F
= 1mA
(300μs pulse),
V
CE
= 5V
0
1
2
3
4
5
6
200
150
100
50
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Forward Current vs. Ambient Temperature
80
70
0.01
Collector-emitter voltage V
CE
( V )
Normalized Output Current vs.
Ambient Temperature
100
Normalized output current
50mA
10
10mA
1.0
I
F
= 1mA
0.1
Normalized to
I
F
= 1mA
(300μs pulse),
V
CE
= 5V
T
A
= 25 °C
-50
-25
0
25
50
75
Ambient temperature T
A
( °C )
Collector Dark Current vs.
Ambient Temperature
100k
100
Forward current I
F
(mA)
60
50
40
30
20
10
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Normalized Output Current vs.
Input Current
100
0.01
Collector dark current I
CEO
(nA)
Normalized output current
10k
50V
V
CE
10
1k
1.0
Normalized to
I
F
= 1mA
(300μs pulse),
V
CE
= 5V
T
A
= 25 °C
0.1
1.0
10
100
10V
V
CE
100
10
V
CE
= 5V
1
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
DB91024
0.1
0.01
Input current I
F
(mA)
19/11/08
PCB设计
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