ISP621-1X, ISP621-2X, ISP621-4X
ISP621-1, ISP621-2, ISP621-4
HIGH DENSITY MOUNTING
PHOTOTRANSISTOR
OPTICALLY COUPLED ISOLATORS
APPROVALS
UL recognised, File No. E91231
Package Code " EE "
'X' SPECIFICATIONAPPROVALS
VDE 0884 in 3 available lead form : -
- STD
- G form
- SMD approved to CECC 00802
Certified to EN60950 by:-
Nemko - Certificate No. P01102465
ISP621-1X
ISP621-1
2.54
7.0
6.0
1
2
Dimensions in mm
4
3
1.2
5.08
4.08
7.62
4.0
3.0
0.5
13°
Max
0.26
3.0
DESCRIPTION
The ISP621-1 , ISP621-2 , ISP621-4 series of
ISP621-2X
0.5 3.35
optically coupled isolators consist of infrared light
ISP621-2
emitting diodes and NPN silicon photo transistors
2.54
in space efficient dual in line plastic packages.
1
2
3
4
7.62
8
7
6
5
FEATURES
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
High Current Transfer Ratio ( 50% min)
High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
High BV
CEO
( 55Vmin )
All electrical parameters 100% tested
Custom electrical selections available
APPLICATIONS
Computer terminals
Industrial systems controllers
Measuring instruments
Signal transmission between systems of
different potentials and impedances
7.0
6.0
1.2
10.16
9.16
4.0
3.0
0.5
3.0
3.35
0.5
13°
Max
0.26
1
2
3
4
5
7.0
6.0
6
7
8
7.62
13°
Max
0.26
16
15
14
13
12
11
10
9
ISP621-4X
ISP621-4
2.54
OPTION SM
SURFACE MOUNT
OPTION G
7.62
1.2
20.32
19.32
4.0
3.0
0.6
0.1
10.46
9.86
1.25
0.75
0.26
10.16
3.0
0.5 3.35
0.5
ISOCOMCOMPONENTSLTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1UD
Tel: (01429) 863609 Fax :(01429) 863581
27/11/08
DB92356
ABSOLUTEMAXIMUMRATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 125°C
Operating Temperature
-30°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUTDIODE
Forward Current
Reverse Voltage
Power Dissipation
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Emitter-collector Voltage BV
ECO
Collector Current
Power Dissipation
POWER DISSIPATION
Total Power Dissipation
(derate linearly 2.67mW/°C above 25°C)
50mA
5V
70mW
55V
6V
50mA
150mW
200mW
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Current (I
R
)
Output
Collector-emitter Breakdown (BV
CEO
)
55
( Note 2 )
Emitter-collector Breakdown (BV
ECO
)
6
Collector-emitter Dark Current (I
CEO
)
Current Transfer Ratio (CTR) (Note 2)
ISP621-1, ISP621-2, ISP621-4
CTR selection available
GB
BL
GB
50
100
200
30
MIN TYP MAX UNITS
1.0
1.15
1.3
10
V
μA
V
V
nA
TEST CONDITION
I
F
= 10mA
V
R
= 4V
I
C
= 0.5mA
I
E
= 100μA
V
CE
= 24V
5mA I
F
, 5V V
CE
1mA I
F
, 0.4V V
CE
8mA I
F
, 2.4mA I
C
1mA I
F
, 0.2mA I
C
See note 1
See note 1
V
IO
= 500V (note 1)
V
CE
=2V ,
I
C
= 2mA, R
L
= 100Ω
100
Coupled
600
600
600
%
%
%
%
V
V
V
RMS
V
PK
Ω
μs
μs
Collector-emitter Saturation VoltageV
CE (SAT)
GB
Input to Output Isolation Voltage V
ISO
5300
7500
Input-output Isolation Resistance R
ISO
5x10
10
Rise Time, tr
Fall Time, tf
Note 1
Note 2
4
3
0.4
0.4
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
27/11/08
DB92356
Collector Power Dissipation vs. Ambient Temperature
200
Collector power dissipation P
C
(mW)
Collector Current vs. Low
Collector-emitter Voltage
25
Collector current I
C
(mA)
T
A
= 25°C
50
40
30
20
10
5
I
F
= 2mA
150
20
15
10
5
0
100
50
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Forward Current vs. Ambient Temperature
60
0
0.2
0.4
0.6
0.8
1.0
Collector-emitter voltage V
CE
( V )
Collector Current vs. Collector-emitter Voltage
50
50
30
Collector current I
C
(mA)
T
A
= 25°C
20
15
50
Forward current I
F
(mA)
40
30
20
10
0
40
30
20
10
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.28
I
F
= 5mA
I
C
= 1mA
0.24
0.20
0.16
0.12
0.08
0.04
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
10
I
F
= 5mA
0
2
4
6
8
10
Collector-emitter voltage V
CE
( V )
Collector-emitter saturation voltage V
CE(SAT)
(V)
Current Transfer Ratio vs. Forward Current
320
Current transfer ratio CTR (%)
280
240
200
160
120
80
40
0
1
2
5
10
20
50
Forward current I
F
(mA)
DB92356
V
CE
= 5V
T
A
= 25°C
27/11/08
FPGA/CPLD
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