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Low-Voltage SIM/Smart Card
Level Translators in µMAX
General Description
The MAX1840/MAX1841 subscriber identity module
(SIM)/smart card level translators provide level shifting
and electrostatic discharge (ESD) protection for SIM and
smart card ports. These devices integrate two unidirec-
tional level shifters for the reset and clock signals, a bidi-
rectional level shifter for the serial data stream, and
±10kV ESD protection on all card contacts.
The MAX1840 includes a
SHDN
control input to aid
insertion and removal of SIM and smart cards, while the
MAX1841 includes a system-side data driver to support
system controllers without open-drain outputs. The logic
supply voltage range is +1.4V to +5.5V for the “controller
side” and +1.7V to +5.5V for the “card side.” Total sup-
ply current is 1.0µA. Both devices automatically shut
down when either power supply is removed. For a com-
plete SIM card interface, combine the MAX1840/
MAX1841 with the MAX1686H 0V/3V/5V regulated
charge pump.
The MAX1840/MAX1841 are available in ultra-small
10-pin µMAX packages that are only 1.09mm high and
half the area of an 8-pin SO.
The MAX1840/MAX1841 are compliant with GSM test
specifications 11.11 and 11.12.
o
SIM/Smart Card Level Shifting
o
+1.4V to +5.5V Controller Voltage Range
o
+1.7V to +5.5V Card Voltage Range
o
±10kV ESD Card Socket Protection
o
Allows Level Translation with DV
CC
≥
V
CC
or
DV
CC
≤
V
CC
o
Automatically Shuts Down When Either Supply Is
Removed
o
Card Contacts Actively Pulled Low During
Shutdown
o
1µA Total Quiescent Supply Current
o
0.01µA Total Shutdown Supply Current
o
Ultra-Small 10-Pin µMAX Package
o
Compliant with GSM Test Specifications 11.11
and 11.12
Features
MAX1840/MAX1841
Applications
SIM Interface in GSM Cellular Telephones
Smart Card Readers
Logic Level Translation
SPI™/QSPI™/MICROWIRE™ Level Translation
PART
MAX1840EUB
MAX1841EUB
Ordering Information
TEMP. RANGE
-40°C to +85°C
-40°C to +85°C
PIN-PACKAGE
10 µMAX
10 µMAX
Typical Operating Circuit
DV
CC
DV
CC
DV
CC
RIN
SYSTEM
CONTROLLER
V
CC
RST
V
CC
V
CC
RST
SIM OR
SMART
CARD
Pin Configuration
TOP VIEW
DATA
DV
CC
CIN
RIN
SHDN (DDRV)
1
2
3
4
5
10
IO
9
V
CC
CLK
RST
GND
MAX1840
MAX1841
CIN
DATA
OPTIONAL
OPTIONAL
SHDN*
DDRV*
IO
GND
IO
CLK
CLK
MAX1840
MAX1841
8
7
6
µMAX
( ) ARE FOR MAX1841.
GND
GND
* SHDN FOR MAX1840 ONLY;
DDRV FOR MAX1841 ONLY.
SPI and QSPI are trademarks of Motorola, Inc.
MICROWIRE is a trademark of National Semiconductor Corp.
1
________________________________________________________________
Maxim Integrated Products
For free samples and the latest literature, visit www.maxim-ic.com or phone 1-800-998-8800.
For small orders, phone 1-800-835-8769.
Low-Voltage SIM/Smart Card
Level Translators in µMAX
MAX1840/MAX1841
ABSOLUTE MAXIMUM RATINGS
DV
CC
, V
CC
to GND................................................-0.3V to +6.0V
RIN, CIN, DATA, DDRV,
SHDN
to GND ......................................-0.3V to (DV
CC
+ 0.3V)
RST, CLK, IO to GND .................................-0.3V to (V
CC
+ 0.3V)
Continuous Power Dissipation (T
A
= +70°C)
10-Pin µMAX (derate 5.6mW/°C above +70°C) ...........444mW
Operating Temperature Range ...........................-40°C to +85°C
Storage Temperature Range .............................-65°C to +150°C
Junction Temperature ......................................................+150°C
Lead Temperature (soldering, 10s) .................................+300°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(Figure 1, DV
CC
= +1.8V; V
CC
= +1.8V, +3.0V, or +5.0V;
SHDN
= DV
CC
, CIN = RIN = GND or DV
CC
, IO = V
CC
, DATA = DDRV = DV
CC
,
C
IO
= C
CLK
= C
RST
= C
DATA
= 30pF,
T
A
= -40°C to +85°C,
unless otherwise noted. Typical values are at T
A
= +25°C.) (Note1)
PARAMETER
POWER SUPPLIES
DV
CC
Operating Range
V
CC
Operating Range
DV
CC
V
CC
CIN static
DV
CC
Operating Current
I
DVCC
CIN clocked at 1.625MHz from GND to DV
CC
with 50% duty cycle
CIN clocked at 3.25MHz from GND to DV
CC
with 50% duty cycle
CIN static
V
CC
Operating Current
I
VCC
CIN clocked at 1.625MHz from GND to DV
CC
with 50% duty cycle
CIN clocked at 3.25MHz from GND to DV
CC
with 50% duty cycle
Total Shutdown Current
I
SHDN
I
OFF
= I
VCC
+ I
DVCC
,
SHDN
= GND
(MAX1840 only), or DV
CC
= GND
or V
CC
= GND
0.2
✕
DV
CC
0.7
✕
DV
CC
0.01
V
OL
V
OH
I
SINK
= 200µA
I
SOURCE
= 20µA
I
SOURCE
= 200µA
Between DATA and DV
CC
(Note 2)
(Note 3)
V
CC
= 5.0V
0.9
✕
V
CC
0.8
✕
V
CC
13
0.3
DV
CC
- 0.6
1
2
20
28
1
0.4
1.4
1.7
0.1
2.5
5
0.9
0.4
mA
0.8
3.0
µA
5.5
5.5
0.5
µA
V
V
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
0.01
1
µA
CIN, RIN,
SHDN,
DDRV LOGIC INPUTS
Digital Input Low Threshold
Digital Input High Threshold
Input Leakage Current
CLK, RST OUTPUTS
Digital Output Low Level
Digital Output High Level
DATA INPUT/OUTPUT
DATA Pullup Resistance
Input Low Threshold
Input High Threshold
Input Low Current
Input High Current
2
R
DATA
V
IL(DATA)
V
IH(DATA)
I
IL
I
IH
kΩ
V
V
mA
µA
V
V
V
IL
V
IH
V
V
µA
_______________________________________________________________________________________
Low-Voltage SIM/Smart Card
Level Translators in µMAX
ELECTRICAL CHARACTERISTICS (continued)
(Figure 1, DV
CC
= +1.8V; V
CC
= +1.8V, +3.0V, or +5.0V;
SHDN
= DV
CC
, CIN = RIN = GND or DV
CC
, IO = V
CC
, DATA = DDRV = DV
CC
,
C
IO
= C
CLK
= C
RST
= C
DATA
= 30pF,
T
A
= -40°C to +85°C,
unless otherwise noted. Typical values are at T
A
= +25°C.) (Note1)
PARAMETER
Output Low Level
Output High Level
IO (INPUT/OUTPUT)
IO Pullup Resistance
Input Low Threshold
Input High Threshold
Input Low Current
Input High Current
Output Low Level
Output High Level
SHUTDOWN OUTPUT LEVELS
I
SINK
= 200µA,
SHDN
= GND, DATA = CIN =
RIN = DV
CC
(MAX1840 only)
Shutdown Output Levels
(IO, CLK, RST)
I
SINK
= 200µA, DV
CC
= GND,
SHDN
(MAX1840) = DDRV (MAX1841) = DATA =
CIN = RIN = DV
CC
I
SINK
= 200µA, V
CC
= GND,
SHDN
(MAX1840) = DDRV (MAX1841) = DATA =
CIN = RIN = DV
CC
TIMING
Maximum CLK Frequency
(Notes 4, 5)
Note 1:
Note 2:
Note 3:
Note 4:
Note 5:
V
CC
= 2.7V to 5.5V, DV
CC
= 1.4V to 2.7V
f
CLK
V
CC
= 1.7V to 3.6V, DV
CC
= 1.4V to 2.25V
5
15
5
20
MHz
0.4
V
R
IO
V
IL(IO)
V
IH(IO)
I
IL
I
IH
V
OL(IO)
V
OH(IO)
DATA = GND or DDRV = GND,
I
SINK
= 200µA
I
SOURCE
= 20µA
0.8
✕
V
CC
Between IO and V
CC
I
IL(MAX)
= 1mA (Note 2)
I
IH(MAX)
= ±20µA (Note 3)
6.5
0.3
0.7
✕
V
CC
1
20
0.4
10
14
kΩ
V
V
mA
µA
V
V
SYMBOL
V
OL(DATA)
V
OH(DATA)
CONDITIONS
IO = GND, I
SINK
= 100µA
DV
CC
= 3.0V, IO = GND, I
SINK
= 200µA
I
SOURCE
= 10µA
DV
CC
= 3.0V, I
SOURCE
= 20µA
0.7
✕
DV
CC
0.7
✕
DV
CC
MIN
TYP
MAX
0.4
0.4
UNITS
V
V
MAX1840/MAX1841
0.4
V
0.4
V
Specifications to -40°C are guaranteed by design, not production tested.
V
IL
is defined as the voltage at which the output (DATA/IO) voltage equals 0.5V.
V
IH
is defined as the voltage at which the output (DATA/IO) voltage exceeds the input (IO/DATA) voltage by 100mV.
Timing specifications are guaranteed by design, not production tested.
The maximum CLK frequency is defined as the output duty cycle remaining in the 40% to 60% range when the 50% CIN is
applied. CIN has 5ns rise and fall times; levels are GND to DV
CC
. Input and output levels are measured at 50% of the waveform.
_______________________________________________________________________________________
3
Low-Voltage SIM/Smart Card
Level Translators in µMAX
MAX1840/MAX1841
Typical Operating Characteristics
(Circuit of Figure 1, DV
CC
= 3.0V, V
CC
= +5.0V, DDRV or DATA = DV
CC
, RIN = CIN = GND, T
A
= +25°C, unless otherwise noted.)
TOTAL OPERATING SUPPLY CURRENT
vs. CARD-SIDE SUPPLY VOLTAGE
(DATA STATIC)
MAX1840/1-02
MAX1840/1-01
TOTAL OPERATING SUPPLY CURRENT
vs. CLOCK FREQUENCY (DATA STATIC)
3.0
SUPPLY CURRENT, I
VCC
+ I
DVCC
(mA)
2.5
2.0
1.5
1.0
0.5
0
0
2
4
6
8
10
FREQUENCY (MHz)
V
CC
= 1.8V
V
CC
= 5V
V
CC
= 3V
SUPPLY CURRENT, I
VCC
+ I
DVCC
(mA)
DATA OR DDRV = DV
CC
CIN CLOCKED WITH A
0 TO DV
CC
SQUARE WAVE
2.0
TOTAL OPERATING SUPPLY CURRENT
vs. TEMPERATURE (DATA STATIC)
f
CIN
= 5MHz
V
CC
= 5V
1.2
SUPPLY CURRENT, I
VCC
+ I
DVCC
(mA)
MAX1840/1-03
1.6
DATA OR DDRV = DV
CC
CIN CLOCKED WITH A
0 TO DV
CC
SQUARE WAVE
f
CIN
= 5MHz
1.6
1.2
f
CIN
= 3.25MHz
0.8
0.8
V
CC
= 3V
V
CC
= 1.8V
0.4
f
CIN
= 1.625MHz
0
1.5
2.5
3.5
V
CC
(V)
4.5
5.5
0.4
DATA OR DDRV = DV
CC
CIN CLOCKED WITH A
0 TO DV
CC
SQUARE WAVE
0
-40
-15
10
35
60
85
TEMPERATURE (°C)
TOTAL OPERATING SUPPLY CURRENT
vs. CLOCK FREQUENCY (DATA ACTIVE)
MAX1840/1-04
TOTAL OPERATING SUPPLY CURRENT
vs. CARD-SIDE SUPPLY VOLTAGE
(DATA ACTIVE)
MAX1840/1-05
TOTAL OPERATING SUPPLY CURRENT
vs. TEMPERATURE (DATA ACTIVE)
f
CIN
= 5MHz
V
CC
= 5V
SUPPLY CURRENT, I
VCC
+ I
DVCC
(mA)
MAX1840/1-06
3.0
SUPPLY CURRENT, I
VCC
+ I
DVCC
(mA)
2.5
2.0
SUPPLY CURRENT, I
VCC
+ I
DVCC
(mA)
f
DATA
OR f
DDRV
= f
CIN
/372
CIN CLOCKED WITH A
0 TO DV
CC
SQUARE WAVE
2.0
V
CC
= 5V
1.6
f
DATA
OR f
DDRV
= f
CIN
/372
CIN CLOCKED WITH A
0 TO DV
CC
SQUARE WAVE
2.0
f
CIN
= 5MHz
1.6
V
CC
= 3V
1.5
1.0
0.5
0
0
2
4
6
8
10
FREQUENCY (MHz)
V
CC
= 1.8V
1.2
f
CIN
= 3.25MHz
1.2
V
CC
= 3V
0.8
V
CC
= 1.8V
f
DATA
OR f
DDRV
= f
CIN
/372
CIN CLOCKED WITH A
0 TO DV
CC
SQUARE WAVE
-40
-15
10
35
60
85
0.8
0.4
f
CIN
= 1.625MHz
0
1.5
2.5
3.5
V
CC
(V)
4.5
5.5
0.4
0
TEMPERATURE (°C)
CIN TO CLK OR RIN TO RST
WAVEFORM (3V TO 5V)
MAX1840/1-07
CIN TO CLK OR RIN TO RST
WAVEFORM (3V TO 1.8V)
MAX1840/1-08
CIN TO CLK OR RIN TO RST
WAVEFORM (1.8V TO 1.8V)
MAX1840/1-09
f
CIN
= 5MHz
3V
CIN OR RIN 3V
2V/div
0
f
CIN
= 5MHz
CIN OR RIN
1.8V
2V/div
0
f
CIN
= 5MHz
CIN OR RIN
1V/div
0
5V
1.8V
CLK OR RST
2V/div
0
20ns/div
0
20ns/div
CLK OR RST 1.8V
1V/div
0
20ns/div
CLK OR RST
1V/div
4
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