based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh
HYM72V16M636B(L)T6 Series
DESCRIPTION
The HYM72V16M636B(L)T6 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of four 16Mx16bits
CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144 pin glass-epoxy
printed circuit board. Two 0.33uF and one 0.1uF decoupling capacitors per each SDRAM are mounted on the PCB.
The HYM72V16M636B(L)T6 Series are Dual In-line Memory Modules suitable for easy interchange and addition of 128Mbytes mem-
ory. The HYM72V16M636B(L)T6 Series are fully synchronous operation referenced to the positive edge of the clock . All inputs and
outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth.
FEATURES
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PC133/PC100MHz support
144pin SDRAM SODIMM
Serial Presence Detect with EEPROM
1.00” (25.40mm) Height PCB with double sided com-
ponents
Single 3.3±0.3V power supply
- 1, 2, 4 or 8 or Full page for Sequential Burst
•
•
All device pins are compatible with LVTTL interface
- 1, 2, 4 or 8 for Interleave Burst
Data mask function by DQM
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Programmable CAS Latency ; 2, 3 Clocks
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SDRAM internal banks : four banks
Module bank : one physical bank
Auto refresh and self refresh
8192 refresh cycles / 64ms
Programmable Burst Length and Burst Type
ORDERING INFORMATION
Part No.
HYM72V16M636BT6-K
HYM72V16M636BT6-H
HYM72V16M636BLT6-K
HYM72V16M636BLT6-H
Clock
Frequency
133MHz
133MHz
133MHz
133MHz
Internal
Bank
Ref.
Power
Normal
SDRAM
Package
Plating
4 Banks
8K
Low Power
TSOP-II
Gold
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev. 0.2/Feb. 02
1
PC133 SDRAM SO DIMM
HYM72V16M636B(L)T6 Series
PIN DESCRIPTION
PIN
CK0, CK1
CKE0
/S0
BA0, BA1
A0 ~ A12
/RAS, /CAS, /WE
DQM0~DQM7
DQ0 ~ DQ63
VCC
V
SS
SCL
SDA
SA0~2
WP
NC
PIN NAME
Clock Inputs
Clock Enable
Chip Select
SDRAM Bank Address
Address
Row Address Strobe, Column
Address Strobe, Write Enable
Data Input/Output Mask
Data Input/Output
Power Supply (3.3V)
Ground
SPD Clock Input
SPD Data Input/Output
SPD Address Input
Write Protect for SPD
No Connection
DESCRIPTION
The system clock input. All other inputs are registered to the SDRAM on the
rising edge of CLK
Controls internal clock signal and when deactivated, the SDRAM will be one
of the states among power down, suspend or self refresh
Enables or disables all inputs except CK, CKE and DQM
Selects bank to be activated during /RAS activity
Selects bank to be read/written during /CAS activity
嵌入式系统
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