SKR 12,4 Qu bond
Absolute Maximum Ratings
Symbol
V
RRM
I
F(AV)
I
2
t
I
FSM
T
jmax
Conditions
T
j
= 25 °C, I
R
= 0.2 mA
T
s
= 80 °C, T
j
= 150 °C
T
j
= 150 °C, 10 ms, sin 180°
10 ms
sin 180°
T
j
= 25 °C
T
j
= 150 °C
Values
1600
190
26450
3200
2300
150
Unit
V
A
A
2
s
A
A
°C
DIODE
I
F(DC)
= 235 A
V
RRM
= 1600 V
Size: 12,4 mm x 12,4 mm
SKR 12,4 Qu bond
Electrical Characteristics
Symbol
I
R
V
F
V
(TO)
r
T
t
rr
Conditions
T
j
= 25 °C, V
RRM
T
j
= 120 °C, V
RRM
T
j
= 25 °C, I
F
= 160 A
T
j
= 125 °C, I
F
= 160 A
T
j
= 125 °C
T
j
= 125 °C
T
j
= 25 °C, ± 1 A
min.
typ.
max.
0.2
1.1
Unit
mA
mA
V
V
V
mΩ
µs
1
0.9
1.21
1.1
0.83
1.0
34
Features
• high current density due to mesa
technology
• high surge current
• compatible to thick wire bonding
• compatible to all standard solder
processes
Thermal Characteristics
Symbol
T
j
T
stg
T
solder
T
solder
R
th(j-s)
10 min.
5 min.
soldered on 0,38 mm DCB, reference
point on copper heatsink close to the
chip
0.27
Conditions
min.
-40
-40
typ.
max.
150
150
250
320
Unit
°C
°C
°C
°C
K/W
Typical Applications
• uncontrolled rectifier bridges
Mechanical Characteristics
Symbol
Raster
size
Area total
Anode
Cathode
Wire bond
Package
Chips /
Package
Conditions
Values
12,4 x 12,4
153,76
bondable (Al)
solderable (Ag/Ni)
Al, diameter
≤
500 µm
tray
36
Unit
mm
mm
2
pcs
SKR
© by SEMIKRON
Rev. 0 – 22.09.2009
1
SKR 12,4 Qu bond
This technical information specifies semiconductor devices. No warranty or guarantee expressed or implied is made regarding delivery,
performance or suitability.
2
Rev. 0 – 22.09.2009
© by SEMIKRON
微控制器 MCU
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