SKM 800GA125D
Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
Units
SEMITRANS
®
4
Ultrafast IGBT Modules
SKM 800GA125D
Module
Inverse Diode
Features
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Units
Typical Applications
Remarks
GA
1
28-04-2009 NOS
© by SEMIKRON
SKM 800GA125D
Characteristics
Symbol Conditions
min.
typ.
max.
Units
SEMITRANS
®
4
Ultrafast IGBT Modules
SKM 800GA125D
Module
Features
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
Typical Applications
Remarks
GA
2
28-04-2009 NOS
© by SEMIKRON
SKM 800GA125D
Fig. 1 Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2 Rated current vs. temperature I
C
= f (T
C
)
Fig. 3 Typ. turn-on /-off energy = f (I
C
)
Fig. 4 Typ. turn-on /-off energy = f (R
G
)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
3
28-04-2009 NOS
© by SEMIKRON
SKM 800GA125D
Fig. 7 Typ. switching times vs. I
C
Fig. 8 Typ. switching times vs. gate resistor R
G
Fig. 9 Transient thermal impedance of IGBT and diode
Fig. 10 CAL diode forward characteristic
Fig. 11 CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovered charge
4
28-04-2009 NOS
© by SEMIKRON
SKM 800GA125D
UL Recognized
File no. E 63 532
5
28-04-2009 NOS
© by SEMIKRON